Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Chwan‐Wen King"'
Autor:
Chwan-Wen King, 金傳文
83
In this dissertation, we give a series of investigations on the periodic systems. First of all, we introduce the time- invariant model of periodic systems both in time and frequency domains. Based on the model asserted here, we easily obtain
In this dissertation, we give a series of investigations on the periodic systems. First of all, we introduce the time- invariant model of periodic systems both in time and frequency domains. Based on the model asserted here, we easily obtain
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/03852438413032380522
Autor:
Ching-An Lin, Chwan-Wen King
Publikováno v:
IEEE Transactions on Signal Processing. 43:1753-1765
Most speech scrambling systems are either linear periodic filters or can be modeled as such. It is well-known that from an input-output point of view, a periodic filter is equivalent to a multi-input multi-output linear time-invariant system and thus
Autor:
Ching-An Lin, Chwan-Wen King
Publikováno v:
IEEE Transactions on Signal Processing. 42:196-200
The authors consider linear periodic filters. They give simple necessary and sufficient conditions for the filter to be invertible and a simple formula to compute its inverse. If the filter is not invertible, they propose a method to compute its opti
Autor:
Chwan-Wen King, Ching-An Lin
Publikováno v:
IEEE Transactions on Automatic Control. 38:462-466
Periodic controllers designed based on the so-called lifting technique are usually represented by transfer matrices. Real operations require that the controllers be implemented as periodic systems. The problem of realizing an Nn/sub o/*Nn/sub i/ prop
Autor:
Chwan-Wen King, Ching-An Lin
Publikováno v:
IEEE Transactions on Signal Processing; 1995, Vol. 43 Issue 8, p1753-1765, 13p
Publikováno v:
Journal of The Electrochemical Society. 130:458-462
The oxidation resistance characteristics of silicon thermal nitride films are studied theoretically and experimentally. A four-layer model for the oxidation resistance kinetics has been developed in general, and the oxidation resistance time has been
Publikováno v:
Journal of The Electrochemical Society. 129:1559-1563
An analytic model for the growth kinetics of silicon thermal nitridation has been developed, in which the nitrogen radicals diffused across the as-grown thermal silicon nitride layer have been characterized by a characteristic diffusion length. It ha
Autor:
Ching-An Lin, Chwan-Wen King
Publikováno v:
IEEE Transactions on Automatic Control; 1993, Vol. 38 Issue 3, p462-466, 5p
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.