Zobrazeno 1 - 10
of 460
pro vyhledávání: '"Chuvilin Andrey"'
Autor:
Modin Evgenii, Chuvilin Andrey
Publikováno v:
BIO Web of Conferences, Vol 129, p 02001 (2024)
Externí odkaz:
https://doaj.org/article/f0e52293a6e24bc6bf0a499aedec0506
Autor:
Merkens Stefan, De Salvo Giuseppe, Tollan Christopher, Bejtka Katarzyna, Fontana Marco, Chiodoni Angelica, Grzelczak Marek, Chuvilin Andrey
Publikováno v:
BIO Web of Conferences, Vol 129, p 08001 (2024)
Externí odkaz:
https://doaj.org/article/c119bda614b545269cdf9b88e9237927
Autor:
Gho Cecilia Irene, Bejtka Katarzyna, Fontana Marco, Tendero Maria José López, López Alberto Lopera, Serra Roger Miro, de los Bernardos Miriam Díaz, Hernández Simelys, Guzmán Hilmar, Merkens Stefan, Chuvilin Andrey, Pirri Candido Fabrizio, Chiodoni Angelica
Publikováno v:
BIO Web of Conferences, Vol 129, p 26012 (2024)
Externí odkaz:
https://doaj.org/article/b7c96ab7d8c54b2f80128c948f1153dc
Autor:
Suárez-Rodríguez, Manuel, Martín-García, Beatriz, Skowroński, Witold, Calavalle, F., Tsirkin, Stepan S., Souza, Ivo, De Juan, Fernando, Chuvilin, Andrey, Fert, Albert, Gobbi, Marco, Casanova, Fèlix, Hueso, Luis E.
Publikováno v:
Phys. Rev. Lett. 132, 046303 (2024)
Electrical transport in non-centrosymmetric materials departs from the well-established phenomenological Ohm's law. Instead of a linear relation between current and electric field, a non-linear conductivity emerges along specific crystallographic dir
Externí odkaz:
http://arxiv.org/abs/2311.08267
Autor:
Arango, Isabel C., Choi, Won Young, Pham, Van Tuong, Groen, Inge, Vaz, Diogo C., Debashis, Punyashloka, Li, Hai, DC, Mahendra, Oguz, Kaan, Chuvilin, Andrey, Hueso, Luis E., Young, Ian A., Casanova, Fèlix
Publikováno v:
Physical Review B 108, 104425 (2023)
The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion efficiency. One of the most promising candidates in this regard is sputt
Externí odkaz:
http://arxiv.org/abs/2311.03598
Autor:
Olejniczak, Adam, Lawera, Zuzanna, Zapata-Herrera, Mario, Chuvilin, Andrey, Samokhvalov, Pavel, Nabiev, Igor, Grzelczak, Marek, Rakovich, Yury, Krivenkov, Victor
The field of quantum technology has been rapidly expanding in the past decades, yielding numerous applications as quantum information, quantum communication and quantum cybersecurity. The central building block for these applications is a quantum emi
Externí odkaz:
http://arxiv.org/abs/2308.10325
Autor:
Vaz, Diogo C., Lin, Chia-Ching, Plombon, John J., Choi, Won Young, Groen, Inge, Arango, Isabel C., Chuvilin, Andrey, Hueso, Luis E., Nikonov, Dmitri E., Li, Hai, Debashis, Punyashloka, Clendenning, Scott B., Gosavi, Tanay A., Huang, Yen-Lin, Prasad, Bhagwati, Ramesh, Ramamoorthy, Vecchiola, Aymeric, Bibes, Manuel, Bouzehouane, Karim, Fusil, Stephane, Garcia, Vincent, Young, Ian A., Casanova, Fèlix
Publikováno v:
Nature Communications 15, 1902 (2024)
As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies. Alternativel
Externí odkaz:
http://arxiv.org/abs/2302.12162
Autor:
Jo, Junhyeon, Calavalle, Francesco, Martín-García, Beatriz, Casanova, Fèlix, Chuvilin, Andrey, Hueso, Luis E., Gobbi, Marco
Publikováno v:
Adv. Mater. 34, 2200474 (2022)
The exfoliation of layered magnetic materials generates atomically thin flakes characterized by an ultrahigh surface sensitivity, which makes their magnetic properties tunable via external stimuli, such as electrostatic gating and proximity effects.
Externí odkaz:
http://arxiv.org/abs/2302.11071
Autor:
Arango, Isabel C, Anadón, Alberto, Novoa, Silvestre, Pham, Van Tuong, Choi, Won Young, Alegre, Junior, Badie, Laurent, Chuvilin, Andrey, Petit-Watelot, Sébastien, Hueso, Luis E, Casanova, Fèlix, Rojas-Sánchez, Juan-Carlos
Publikováno v:
Phys. Rev. Materials 7, 075402 (2023)
Topological materials are of high interest due to the promise to obtain low power and fast memory devices based on efficient spin-orbit torque switching or spin-orbit magnetic state read-out. In particular, sputtered polycrystalline Bi$_x$Se$_{1-x}$
Externí odkaz:
http://arxiv.org/abs/2212.12697
Autor:
Groen, Inge, Pham, Van Tuong, Ilić, Stefan, Choi, Won Young, Chuvilin, Andrey, Sagasta, Edurne, Vaz, Diogo C., Arango, Isabel C., Ontoso, Nerea, Bergeret, F. Sebastian, Hueso, Luis E., Tokatly, Ilya V., Casanova, Fèlix
Publikováno v:
Phys. Rev. B 107, 184438 (2023)
Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such as the magnetoelectric spin-orbit (MESO) logic, interfaces are crucia
Externí odkaz:
http://arxiv.org/abs/2211.09250