Zobrazeno 1 - 10
of 85
pro vyhledávání: '"Chusuke Munakata"'
Autor:
Chusuke Munakata, Arito Ogawa
Publikováno v:
Japanese Journal of Applied Physics. 42:3299-3303
Effective lifetimes measured by the frequency-dependent surface photovoltage method, become, more or less, shorter than volume lifetimes in a square pillar because of the carrier recombination at the lateral surfaces of the pillar. The volume lifetim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c791501622f51a75d955d6d065474785
https://doi.org/10.1143/jjap.42.3299
https://doi.org/10.1143/jjap.42.3299
Publikováno v:
Japanese Journal of Applied Physics. 42:33-37
Effective lifetimes measured with the frequency-dependent surface photovoltage method, decrease in proportion to the quantity of excess carriers escaping from the photocarrier injection point towards the lateral surfaces where they recombine. It has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4731ce717797802654700b37e0d5001
https://doi.org/10.1143/jjap.42.33
https://doi.org/10.1143/jjap.42.33
Autor:
Kikuo Watanabe, Chusuke Munakata
Publikováno v:
Japanese Journal of Applied Physics. 41:2796-2800
Excess photocarriers excited with a photon beam in a silicon (Si) wafer are annihilated through recombination processes in the surface and bulk regions in the wafer. When a p-type Si wafer has a positive oxide charge on its surface, for example, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d1bed6d7d10b5be9ff31e7ce1041155
https://doi.org/10.1143/jjap.41.2796
https://doi.org/10.1143/jjap.41.2796
Autor:
Chusuke Munakata, Takumi Suzuki
Publikováno v:
Japanese Journal of Applied Physics. 45:L941-L943
Excess photocarriers excited in silicon wafers are annihilated both in surface and volume regions independently of each other. When a photoconductive decay curve obtained with the microwave-detected photoconductive decay method is concave in semi-log
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d35d8ea79c0ee031c8f98f81c653e211
https://doi.org/10.1143/jjap.45.l941
https://doi.org/10.1143/jjap.45.l941
Publikováno v:
Materials Transactions, JIM. 38:319-325
Monitoring of detrimental micro-contamination coming from various sources has been strived to upgrade process cleanliness in silicon (Si) ultra-large-scale-integration (ULSI), and to improve the device performance and chip yield. Processed wafers wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b25bfe5f81c31aa082e2e8a3db8276fe
https://doi.org/10.2320/matertrans1989.38.319
https://doi.org/10.2320/matertrans1989.38.319
Autor:
Chusuke Munakata
Publikováno v:
Japanese Journal of Applied Physics. 43:L1394-L1396
Effective lifetimes measured with the microwave-detected photoconductive decay method are often unexpectedly short compared with those obtained with the conventional photoconductive decay method, particularly when photocarriers stored in space-charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d11aedecdbc8aebcee5784c5258fcb14
https://doi.org/10.1143/jjap.43.l1394
https://doi.org/10.1143/jjap.43.l1394
Autor:
Chusuke Munakata, Tatsumi Mizutani
Publikováno v:
Japanese Journal of Applied Physics. 43:L290-L292
The polarity of the oxide charge in a thermally wet-oxidized and radiation-damaged n-type silicon wafer was determined by the conventional capacitance-voltage (C-V) method and an ac surface photovoltage (SPV) technique. The C-V method, which uses a m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd63a58d811b5d87af09a6bb3287994a
https://doi.org/10.1143/jjap.43.l290
https://doi.org/10.1143/jjap.43.l290
Autor:
Hirofumi Shimizu, Chusuke Munakata
Publikováno v:
Materials Transactions, JIM. 35:827-832
A scanning photon microscope (SPM), based on the imaging of ac surface photovoltages (SPVs), has been developed and used for nondestructive detection of impurities in silicon (Si) wafer surfaces rinsed with various solutions. When aluminum (Al), iron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71e1b3576df9eec0745d38ecb6d7cc0a
https://doi.org/10.2320/matertrans1989.35.827
https://doi.org/10.2320/matertrans1989.35.827
Autor:
Hirofumi Shimizu, Chusuke Munakata
Publikováno v:
Journal of Applied Physics. 73:8336-8339
Effects of residual metal impurities after RCA (Radio Corporation of America) standard cleaning (alkaline and acid rinses) on the generation of ac surface photovoltages (SPVs) are investigated using n‐type silicon wafers. Aluminum (Al) and iron (Fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cbc87c4e6ce4fe3002d3b83fd14f81c
https://doi.org/10.1063/1.353425
https://doi.org/10.1063/1.353425
Autor:
Chusuke Munakata, Shigeharu Kimura
Publikováno v:
Applied optics. 29(20)
The resolution of a fluorescent confocal scanning optical microscope (CSOM) is superior to that of a conventional fluorescent optical microscope. To attain this superiority, the fluorescent CSOM uses a pinhole in front of the detector. Thus, the reso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c63be0ad4e9ac55823147465743e4d25
https://pubmed.ncbi.nlm.nih.gov/20567368
https://pubmed.ncbi.nlm.nih.gov/20567368