Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Chur-Shyang Fuh"'
Autor:
Guang Ting Zheng, Yao Jen Lee, Meng-Chyi Wu, Chur Shyang Fuh, Li Feng Teng, Chih Hsiang Chang, Po-Tsun Liu
Publikováno v:
Thin Solid Films. 619:148-152
In this work, we studied the effects of microwave annealing process on amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) and demonstrated a high performance and reliable device characteristics. The characteristic trapping time ( τ ) derived
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3953a5d717ef14520087969999b57c87
https://doi.org/10.1016/j.tsf.2016.11.007
https://doi.org/10.1016/j.tsf.2016.11.007
Publikováno v:
Journal of Display Technology. 12:1070-1077
In this study, the role of nitrogen in the dc-sputtered amorphous indium gallium zinc oxide (a-IGZO):N are explored extensively with a series of nitrogen gas flow rates during IGZO film deposition. The amorphous film structure and the evolution of ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3369646375fc17478136146cbec7726
https://doi.org/10.1109/jdt.2016.2585186
https://doi.org/10.1109/jdt.2016.2585186
Publikováno v:
RSC Advances. 6:106374-106379
We studied the influence of the backchannel passivation layer (BPL) on the ambient stability of amorphous indium-zinc-tin-oxide thin-film transistors (a-IZTO TFTs), in which atomic layer deposited (ALD) Al2O3 films and plasma-enhanced chemical vapor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d590b62fb6f1c7c25c5b1bb1ed5015b4
https://doi.org/10.1039/c6ra22423g
https://doi.org/10.1039/c6ra22423g
Publikováno v:
SID Symposium Digest of Technical Papers. 45:1017-1020
In this work, the relation between post annealing temperature and electrical characteristic on high mobility a-IZTO TFTs was investigated. The 400°C-annealed a-IZTO TFTs exhibited a better performance with field effect mobility of 39.6 cm2/Vs, Vth o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f83e37719ac238c62647d4726021cd3f
https://doi.org/10.1002/j.2168-0159.2014.tb00264.x
https://doi.org/10.1002/j.2168-0159.2014.tb00264.x
Publikováno v:
ECS Journal of Solid State Science and Technology. 3:Q3054-Q3057
This work demonstrates the versatility of amorphous InZnSnO (a-IZTO) oxide semiconductor, covering from the thin film transistor (TFT) to the resistive random access memory (RRAM) technologies for system-on-panel applications. The high-performance a-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8072a1dbae21b0d2d68e34da1249a96d
https://doi.org/10.1149/2.008409jss
https://doi.org/10.1149/2.008409jss
Publikováno v:
ECS Transactions. 50:257-268
Po-Tsun Liu, Li-Wei Chu, Li-Feng Teng, Yang-Shun Fan and Chur-Shyang Fuh 1. Department of Photonics & Display Institute, National Chiao Tung University, Hsinchu, Taiwan, 30010, R.O.C. 2. Department of Photonics & Institute of ElectroOptical Engineeri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::157c164bf58f8e792e47ae5120afda41
https://doi.org/10.1149/05008.0257ecst
https://doi.org/10.1149/05008.0257ecst
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:Q1-Q5
The role of oxygen in amorphous InGaZnO thin film transistor (a-IGZO TFT) is studied for the device ambient stability. The threshold voltage (Vth) value of 350◦C annealed a-IGZO TFT decreased apparently with the staying duration, and the average va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3a14a1ed08b4cd67e327e84ba6ab271
https://doi.org/10.1149/2.012301jss
https://doi.org/10.1149/2.012301jss
Publikováno v:
Thin Solid Films. 520:1489-1494
We examined the characteristics of passivation-free amorphous In–Ga–Zn–O thin film transistor (a-IGZO TFT) devices under different thermal annealing atmospheres. With annealing at higher temperature, the device performed better at the above-thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8aa7b3f01205c28808103d02ff86ff6
https://doi.org/10.1016/j.tsf.2011.08.088
https://doi.org/10.1016/j.tsf.2011.08.088
Publikováno v:
IEEE Electron Device Letters. 35:1103-1105
This letter studies the correlation of postannealing treatment on the electrical performance of amorphous In-Zn-Sn-O thin-film transistor (a-IZTO TFT). The 400 °C annealed a-IZTO TFT exhibits a superior performance with field-effect mobility of 39.6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a236073118f7c1089a1d02df0b822093
https://doi.org/10.1109/led.2014.2354598
https://doi.org/10.1109/led.2014.2354598
Autor:
Simon M. Sze, Yao Jen Lee, Han-Ping D. Shieh, Po-Tsun Liu, Sih-Wei Huang, Li-Feng Teng, Chur-Shyang Fuh
Publikováno v:
IEEE Electron Device Letters. 34:1157-1159
In this letter, microwave annealing technology is proposed to reduce thermal budget for the manufacture of transparent conductive oxide thin-film transistor (TFT). With microwave annealing, a nitrogenated amorphous In-Ga-Zn-O (a-IGZO:N) TFT fabricate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6ad3207a3032edf18f73bf04f276572
https://doi.org/10.1109/led.2013.2272311
https://doi.org/10.1109/led.2013.2272311