Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Chuqi Yi"'
Autor:
Chuqi Yi, Zhuangyi Zhou, Mattias Klaus Juhl, Jingnan Tong, Kean Chern Fong, Fiacre Emile Rougieux, Stephen Bremner
Publikováno v:
AIP Advances, Vol 13, Iss 3, Pp 035325-035325-9 (2023)
Epitaxial monolithic III–V/Si tandem solar cells are one of the most promising technologies to be adopted by the industry after the efficiency of the current market dominating single junction silicon solar cell saturates at its fundamental limit. O
Externí odkaz:
https://doaj.org/article/d0a0b74c61704089b7e38370cf4d3f3e
Autor:
Jianghui Zheng, Weiyuan Duan, Yuzhen Guo, Zijun C. Zhao, Haimang Yi, Fa-Jun Ma, Laura Granados Caro, Chuqi Yi, Jueming Bing, Shi Tang, Jiangtao Qu, Kean Chern Fong, Xin Cui, Yan Zhu, Limei Yang, Andreas Lambertz, Md Arafat Mahmud, Hongjun Chen, Chwenhaw Liao, Guoliang Wang, Marko Jankovec, Cheng Xu, Ashraf Uddin, Julie M. Cairney, Stephen Bremner, Shujuan Huang, Kaining Ding, David R. McKenzie, Anita W. Y. Ho-Baillie
Publikováno v:
Energy & Environmental Science. 16:1223-1233
An ultra-thin indium tin oxide interlayer design was developed for interfacing perovskite solar cells with Si solar cells thereby minimising shunting effects for large area monolithic tandem devices.
Autor:
Andrea Cordaro, Stefan Wil Tabernig, Michael Pollard, Chuqi Yi, Esther Alarcon-Llado, Bram Hoex, Albert Polman
Publikováno v:
physica status solidi (a). 220:2200827
Publikováno v:
IEEE Journal of Photovoltaics. 10:1299-1306
Severe silicon lifetime degradation was found after its high-temperature treatment in III–V material growth chambers for the fabrication of III–V/Si multijunction solar cells. Further improvement of the cell efficiency requires insights into the
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
Although doped a-Si:H (hydrogenated amorphous silicon) as carrier transport layers provides superior carrier selectivity and moderate resistive losses, the parasitic absorption of free carriers and complex doping techniques are still limiting factors
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
In this report, we present a novel application of ALD (atomic layer deposition) deposited aluminum oxide (AlO x ) combined with a passivation layer of a-Si:H(i) (hydrogenated intrinsic amorphous silicon) as electron selective contacts (ESCs) on n-typ
Autor:
Daniel L. Lepkowski, Stephen Bremner, Jacob T. Boyer, Tyler J. Grassman, Hamid Mehrvarz, Mattias K. Juhl, Udo Römer, Zak H. Blumer, Anastasia Soeriyadi, Chuqi Yi, Tal Kasher, Steven A. Ringel, Anita Ho-Baillie
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
Historically, the performance of monolithically-integrated GaAsP/Si tandem solar cells has been limited by the presence of elevated TDD in the GaAsP subcell. However, our recent development of low-TDD GaAsP/Si virtual substrates has greatly improved
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
With advantages such as being dopant-free and with relatively low thermal budgets, carrier selective contacts (CSCs) are gaining more attention recently. Among CSC materials Copper(I) Sulfide (Cu 2 S) is nontoxic and earth-abundant, but rarely invest
Autor:
Steven A. Ringel, Daniel Derkacs, Zak H. Blumer, Stephen Bremner, Anita Ho-Baillie, Chuqi Yi, Anastasia Soeriyadi, Daniel L. Lepkowski, Alex Stavrides, Tyler J. Grassman, Mattias K. Juhl, Chris Kerestes, Jacob T. Boyer, Hamid Mehrvarz
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
Detailed loss analysis of our previously reported 21.8% (unverified) monolithic GaAsP/Si tandem cells has identified and quantified three main mechanisms limiting cell performance: dislocation mediated voltage and current losses, improper bandgap pro
Autor:
Stephen Bremner, Fa-Jun Ma, Anita Ho-Baillie, Hidenori Mizuno, Takeyoshi Sugaya, Kikuo Makita, Chuqi Yi, Hidetaka Takato, Hamid Mehrvarz
Publikováno v:
Optics express. 28(3)
Silicon based multi-junction solar cells are a promising approach for achieving high power conversion efficiencies using relatively low-cost substrates. In recent years, 2-terminal triple-junction solar cells using GaInP/GaAs as top cells and Si bott