Výsledky vyhledávání - "Chuntaek Park"

Real-Time Plasma Uniformity Monitoring via Selective Plasma Light Intensity Measurement Using Transparent-LCD-Module-Adapted Optical Emission Spectroscopy

Autor: In Joong Kim, Ilgu Yun, Chuntaek Park, Dongseok Shin

Publikováno v: IEEE Sensors Journal. 21:2256-2262

A real-time selective plasma light intensity measurement technique involving optical emission spectroscopy (OES) is proposed for process uniformity monitoring and detection in various plasma regions during semiconductor processing. Among plasma diagn

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e006b7cac6d2f414fab7042977c7a6da
https://doi.org/10.1109/jsen.2020.3017506

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Degradation of Off-Phase Leakage Current of FinFETs and Gate-All-Around FETs Induced by the Self-Heating Effect in the High-Frequency Operation Regime

Autor: Ilgu Yun, Chuntaek Park

Publikováno v: IEEE Transactions on Nanotechnology. 19:308-314

In this article, the influence of the self-heating effect (SHE) on fin-shaped field-effect transistors (FinFETs) and gate-all-around field-effect transistors (GAAFETs) was investigated. The AC analysis with the input of a square pulse at the gate ele

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6f6d73d54669dabc5f2569afb1e94271
https://doi.org/10.1109/tnano.2020.2986540

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Optimization of Self-Heating Driven Leakage Current Properties of Gate-All-Around Field-Effect Transistors Using Neural Network Modeling and Genetic Algorithm

Autor: Ilgu Yun, Chuntaek Park

Publikováno v: Electronics, Vol 10, Iss 2570, p 2570 (2021)
Electronics
Volume 10
Issue 21

As the technology nodes of semiconductor devices have become finer and more complex, progressive scaling down has been implemented to achieve higher densities for electronic devices. Thus, three-dimensional (3D) channel field-effect transistors (FETs

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b31e3daf015b1a73d03d4163bb45a2a0
https://www.mdpi.com/2079-9292/10/21/2570

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Mechanical stress-induced degradation model of amorphous InGaZnO thin film transistors by strain-initiated defect generation

Autor: Ilgu Yun, Chuntaek Park

Publikováno v: Microelectronics Reliability. :592-595

For the applications of next generation display, various types of thin-film transistors (TFTs) are actively researched. Among them, the indium‑gallium‑zinc-oxide (IGZO) TFTs are being focused because of its transparency and other great electrical

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1cf163da9aaa66265e4cbdcfc4b6b473
https://doi.org/10.1016/j.microrel.2017.06.094

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Effects of mechanical stresses on the reliability of low-temperature polycrystalline silicon thin film transistors for foldable displays

Autor: Dongseok Shin, Min Soo Bae, Ilgu Yun, Sang Myung Lee, Chuntaek Park

Publikováno v: Solid-State Electronics. 133:1-5

This paper investigates the mechanical reliability of low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) for foldable display. Both compressive and tensile directions of mechanical stresses were applied for different types of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a061c7fc9fb620ec05f646547a0a35ee
https://doi.org/10.1016/j.sse.2017.04.003

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Crack-guided effect on dynamic mechanical stress for foldable low temperature polycrystalline silicon thin film transistors

Autor: Ilgu Yun, Chuntaek Park, Sang Myung Lee

Publikováno v: Microelectronics Reliability. 64:84-87

In the thin film transistors (TFTs) device research for foldable display, the degradation effect by the mechanical stress is crucial. Here, the crack position is critical for TFT reliability. However, it is difficult to characterize the crack positio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4e6161bb6852b58f9c66c7115e99826f
https://doi.org/10.1016/j.microrel.2016.07.056

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Compact Drain Current Model of Nanoscale FinFET Considering Short Channel Effect in Ballistic Transport Regime

Autor: Ilgu Yun, Min Soo Bae, Chuntaek Park

Publikováno v: SMACD

In this paper, the compact drain current model of 15-nm FinFET is proposed in ballistic transport regime. Based on the Lundstrom's ballistic transport model, the proposed model is formulated for the improvement in both subthreshold and inversion regi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d7756d4bbe86f36db26e245db885c1ed
https://doi.org/10.1109/smacd.2018.8434905

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Thermal modeling of 7 nm node bulk fin-shaped field-effect transistors for device structure-aware design

Autor: Chuntaek Park, Ilgu Yun

Publikováno v: Semiconductor Science and Technology. 33:115014

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::38f92af54e32a343dc6ebb2e210ce06b
https://doi.org/10.1088/1361-6641/aae2ea

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Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects

Autor: Yong Hyeon Shin, Joung Won Park, Ilgu Yun, Min Soo Bae, Hyunwoo Park, Chuntaek Park, Yong Ju Lee

Publikováno v: Semiconductor Science and Technology. 33:065010

A universal core model for multiple-gate (MG) field-effect transistors (FETs) with short channel effects (SCEs) and quantum mechanical effects (QMEs) is proposed. By using a Young's approximation based solution for one-dimensional Poisson's equations

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c074b210253e0bbbee69264d1f21aef9
https://doi.org/10.1088/1361-6641/aac063

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