Výsledky vyhledávání - "Chunhyung Jo"

The Effect of Gate and Drain Fields on the Competition Between Donor-Like State Creation and Local Electron Trapping in In–Ga–Zn–O Thin Film Transistors Under Current Stress

Autor: Hyeongjung Kim, Hyun-Suk Kim, Jozeph Park, Sungju Choi, Dae Hwan Kim, Dong Myong Kim, Sung-Jin Choi, Chunhyung Jo

Publikováno v: IEEE Electron Device Letters. 36:1336-1339

Thin-film transistors using In–Ga–Zn–O (IGZO) semiconductors were evaluated under positive bias stress with different gate and drain voltages ( $V_{\textrm {GS}}$ and $V_{\textrm {DS}}$ , respectively). The transfer characteristics with respect

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b2a6b1b5b3ead388d3f8dec67cd57cc7
https://doi.org/10.1109/led.2015.2487370

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A Study on the Degradation of In-Ga–Zn-O Thin-Film Transistors Under Current Stress by Local Variations in Density of States and Trapped Charge Distribution

Autor: Sung-Jin Choi, Sungju Choi, Dae Hwan Kim, Hyun-Suk Kim, Hyeongjung Kim, Jozeph Park, Dong Myong Kim, Chunhyung Jo

Publikováno v: IEEE Electron Device Letters. 36:690-692

Thin-film transistors using In-Ga–Zn-O (IGZO) semiconductors were evaluated under current stress by applying positive voltages to the gate and drain electrodes. Initially, the transfer characteristics exhibit identical threshold voltages ( $V_{T})$

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::32817f75acb750f578435e606ee9a103
https://doi.org/10.1109/led.2015.2438333

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P.157L:Late News Poster: Characterization of Asymmetrical Negative Bias Stress Effect on the Density-of-States and Parasitic Resistances in a-IGZO Thin-Film Transistors

Autor: Chunhyung Jo, Sungwoo Jun, Jun Ho Song, Byung-Du Ahn, Hyunjun Choi, Je-Hun Lee, Dae Hwan Kim, Seonwook Hwang, Dong Myong Kim, Hagyoul Bae

Publikováno v: SID Symposium Digest of Technical Papers. 44:1070-1073

The dominant mechanism of the negative bias stress (NBS)-induced instability is investigated not to be a change in the subgap DOS but a change in the parasitic resistance caused by the reduced Schottky barrier of the metal contacts. This was verified

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6827d7970296c561731be8b6452bda7b
https://doi.org/10.1002/j.2168-0159.2013.tb06409.x

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P.19: Density-of-States Based Device-Circuit Co-Design Platform for Solution-Processed Organic Integrated Circuits

Autor: Jaehyeong Kim, Jaeman Jang, Bonwon Koo, Dong Myong Kim, Jong Won Chung, Dae Hwan Kim, Hyeongjung Kim, Jiyoul Lee, Sungwoo Jun, Chunhyung Jo, Sunwoong Choi, Jaewook Lee

Publikováno v: SID Symposium Digest of Technical Papers. 44:1051-1054

In this work, we propose the subgap density-of-states (DOS) based device-circuit co-design platform for solution-processed organic integrated circuits. For the circuit simulation, analytical I-V and C-V model were established from experimentally extr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4afb0870c2202b5d8db0ad1908bb53dd
https://doi.org/10.1002/j.2168-0159.2013.tb06404.x

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Single-Scan Monochromatic Photonic Capacitance-Voltage Technique for Extraction of Subgap DOS Over the Bandgap in Amorphous Semiconductor TFTs

Autor: Sung-Jin Choi, Jaeyeop Ahn, Yun Hyeok Kim, Sungwoo Jun, Saeroonter Oh, Jong-Uk Bae, Hagyoul Bae, Dong Myong Kim, Jun Seok Hwang, Chunhyung Jo, Hyunjun Choi, Dae Hwan Kim

Publikováno v: IEEE Electron Device Letters. 34:1524-1526

We report a novel technique for simultaneous extraction of subgap donor- and acceptor-like density of states [gD(E) and gA(E)] over the subgap energy range (EV

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6b14476769be27228400cf5abb67b512
https://doi.org/10.1109/led.2013.2287511

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Unified Subthreshold Coupling Factor Technique for Surface Potential and Subgap Density-of-States in Amorphous Thin Film Transistors

Autor: Hyunjun Choi, Dong Myong Kim, Hagyoul Bae, Sungwoo Jun, Dae Hwan Kim, Chunhyung Jo

Publikováno v: IEEE Electron Device Letters. 34:641-643

We report a unified subthreshold coupling factor technique for a simultaneous extraction of the surface potential $(\psi_{\rm S})$ and the subgap density-of-states [DOS: $g(E)$ ] over the bandgap in amorphous semiconductor thin film transistors (TFTs

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5e153aa678bfa2333fbb4d51b7bf4581
https://doi.org/10.1109/led.2013.2248116

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Characterization of Intrinsic Field-Effect Mobility in TFTs by De-Embedding the Effect of Parasitic Source and Drain Resistances

Autor: Sungwoo Jun, Woojoon Kim, Jaehyeong Kim, Hyun Kwang Jeong, Dong Myong Kim, Yun Hyeok Kim, Jaewook Lee, Inseok Hur, Chunhyung Jo, Dae Hwan Kim, Hagyoul Bae

Publikováno v: IEEE Electron Device Letters. 34:250-252

Due to voltage drops across parasitic resistances in semiconductor devices, extracted performance parameters can be strongly dependent on the geometrical structure. In this letter, we report a characterization technique for the intrinsic field-effect

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::161314b1b83d28f08bc6896eaa798d0d
https://doi.org/10.1109/led.2012.2226424

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High performance gallium-zinc oxynitride thin film transistors for next-generation display applications

Publikováno v: 2013 IEEE International Electron Devices Meeting.

High speed thin film transistors (TFTs) are in great need for next-generation TVs which will employ ultra high definition resolution (3840×2160) panels and possibly include multi-view autostereoscopic 3D technology which will negate the use of glass

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9217e1df7bc7ec8b7688a2c39a47e352
https://doi.org/10.1109/iedm.2013.6724701

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