Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Chunhum Cho"'
Publikováno v:
AIP Advances, Vol 8, Iss 10, Pp 105326-105326-6 (2018)
Persistent PMMA residue formed during a graphene transfer has been a culprit in the optimization of graphene device performance. We demonstrated a facile process to remove the PMMA residue using pulsed KrF laser annealing system at H2/Ar ambient. 10m
Externí odkaz:
https://doaj.org/article/5e6dd3d086354739b45741d5d1bb5009
Autor:
Hyeon Jun Hwang, Sang Kyung Lee, Tae Jin Yoo, Moon-Ho Ham, Chang Goo Kang, Chunhum Cho, Byoung Hun Lee, Sunwoo Heo
Publikováno v:
Carbon. 123:307-310
A graphitic capping layer was successfully formed on top of Cu interconnects at room temperature, using a pulsed KrF laser. The change in temperature of the Cu line was maintained below 380 °C during laser irradiation with a fluence of 312.5 mJ/cm2.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d54f4bba62e68cec18d0141a10ba41f4
https://doi.org/10.1016/j.carbon.2017.07.075
https://doi.org/10.1016/j.carbon.2017.07.075
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 10:634-638
Two-dimensional transition metal dichalcogenides (TMDCs) are potential candidate materials for future thin-film field effect transistors (FETs). However, many aspects of this device must be optimized for practical applications. In addition, low-frequ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::740b5422c6082589dcfb52b20cbd347f
https://doi.org/10.1002/pssr.201600136
https://doi.org/10.1002/pssr.201600136
Autor:
Sangchul Lee, Chunhum Cho, Ukjin Jung, Byoung Hun Lee, Sang Kyung Lee, Chang Goo Kang, Young Gon Lee
Publikováno v:
Carbon. 93:286-294
The importance of proper graphene transfer process cannot be emphasized more because it is so closely related to the performance and stability of graphene devices. In this work, a new transfer method utilizing a voluntary bonding of a graphene film t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26c836e059b95ea8f5183ecc5954779c
https://doi.org/10.1016/j.carbon.2015.05.038
https://doi.org/10.1016/j.carbon.2015.05.038
Autor:
Won Beom Yoo, Byoung Hun Lee, Kyoung Eun Chang, Jin Ho Yang, Soyoung Kim, Chunhum Cho, Chang Hoo Shim, Hyeon Jun Hwang, Sang Kyung Lee, Yongsu Lee
Publikováno v:
Nanoscale. 9(7)
We have successfully demonstrated a graphene–ZnO:N Schottky barristor. The barrier height between graphene and ZnO:N could be modulated by a buried gate electrode in the range of 0.5–0.73 eV, and an on–off ratio of up to 107 was achieved. By us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cf1207b7da212e071bd9094fc1692c5
https://pubmed.ncbi.nlm.nih.gov/28165105
https://pubmed.ncbi.nlm.nih.gov/28165105
Autor:
Jinwoo Noh, Sang Kyung Lee, Chunhum Cho, Yun Ji Kim, Soyoung Kim, Ukjin Jung, Chang Hoo Shim, Kyoung Eun Chang, Byoung Hun Lee
Publikováno v:
SCIENTIFIC REPORTS(6)
Scientific Reports
Scientific Reports
Strong demand for power reduction in state-of-the-art semiconductor devices calls for novel devices and architectures. Since ternary logic architecture can perform the same function as binary logic architecture with a much lower device density and hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::735633eb92bbcca9524bca50b2fa82b6
Autor:
Tae Jin Yoo, Chunhum Cho, Sunwoo Heo, Woojin Park, Yun Ji Kim, Byoung Hun Lee, Hyeon Jun Hwang, Sang Kyung Lee
Publikováno v:
Semiconductor Science and Technology. 34:055010
Graphene field effect transistors (GFETs) with top-gate and back-gate structures have been extensively used without much consideration for compatibility with graphene. A comparative study of the electrical characteristics of buried-gate GFETs and top
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f41e678933114ba5606a6b5a1e1e04f9
https://doi.org/10.1088/1361-6641/ab0d54
https://doi.org/10.1088/1361-6641/ab0d54
Publikováno v:
Carbon. 60:453-460
Unstable characteristics of graphene field effect transistors (FETs) have generated concerns about the feasibility of graphene electronic devices. Two dominant mechanisms of instability, charge trapping and interfacial redox reaction, and their quant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7df356788df28925f7513ee79d771840
https://doi.org/10.1016/j.carbon.2013.04.060
https://doi.org/10.1016/j.carbon.2013.04.060
Autor:
Seonghyun Kim, Jiyong Woo, Wootae Lee, Chunhum Cho, Jungho Shin, Sangsu Park, Hyunsang Hwang, Daeseok Lee, Jubong Park, Godeuni Choi, Byoung Hun Lee
Publikováno v:
Microelectronic Engineering. 107:33-36
We fabricated a nanothin-NbO"2-layer-based Pt/NbO"2/Pt stack and investigated its threshold-switching characteristics, which can be attributed to metal-insulator-transition, at the nanoscale. The Pt/NbO"2/Pt device exhibited a high degree of stabilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b48c22015958304a6205eda5d32340d
https://doi.org/10.1016/j.mee.2013.02.084
https://doi.org/10.1016/j.mee.2013.02.084
Autor:
Byoung Hun Lee, Chang Goo Kang, Young Gon Lee, Hyeon Jun Hwang, Sang Kyung Lee, Chunhum Cho, Sung Kwan Lim, Eunji Park
Publikováno v:
Carbon. 53:182-187
The origin of the device instability of chemical vapor deposited graphene metal oxide semiconductor field effect transistor has been investigated while varying the characterization time scale from milliseconds to a few tens of seconds. When oxygen di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24fdad7fb0fa0b8c3b11a6013daac9cc
https://doi.org/10.1016/j.carbon.2012.10.046
https://doi.org/10.1016/j.carbon.2012.10.046