Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Chunhai Yin"'
Publikováno v:
ACS Applied Electronic Materials. 2:3837-3842
The gating effect achieved by an ionic liquid and its electric double layer allows for charge transfer, which can be an order of magnitude larger than that with conventional dielectrics. However, l...
Autor:
Lucas M. K. Tang, Patrick Seiler, Chunhai Yin, Nikita Lebedev, Jan Aarts, Uli Zeitler, Inge Leermakers
Publikováno v:
Physical Review B. 101
The electric-field tunable Rashba spin-orbit coupling at the LaAlO3/SrTiO3 interface shows potential applications in spintronic devices. However, different gate dependence of the coupling strength has been reported in experiments. On the theoretical
Autor:
A. E. M. Smink, Lucas M. K. Tang, Inge Leermakers, Uli Zeitler, Hans Hilgenkamp, Nikita Lebedev, Chunhai Yin, Wilfred G. van der Wiel, Jan Aarts
Publikováno v:
Physical Review Letters
In LaAlO3/SrTiO3 heterostructures, a still poorly understood phenomenon is that of electron trapping in back-gating experiments. Here, by combining magnetotransport measurements and self-consistent Schrodinger-Poisson calculations, we obtain an empir
Publikováno v:
Physical Chemistry Chemical Physics. 19:23919-23923
Zinc oxide (ZnO) thin films were grown by pulsed layer deposition under an N2 atmosphere at low pressures on a- and r-plane sapphire substrates. Structural studies using X-ray diffraction confirmed that all films had a wurtzite phase. ZnO thin films
Autor:
Chunhai, Yin, Alexander E M, Smink, Inge, Leermakers, Lucas M K, Tang, Nikita, Lebedev, Uli, Zeitler, Wilfred G, van der Wiel, Hans, Hilgenkamp, Jan, Aarts
Publikováno v:
Physical review letters. 124(1)
In LaAlO_{3}/SrTiO_{3} heterostructures, a still poorly understood phenomenon is that of electron trapping in back-gating experiments. Here, by combining magnetotransport measurements and self-consistent Schrödinger-Poisson calculations, we obtain a
Publikováno v:
Physical Review Materials
We report on the fabrication of conducting interfaces between ${\mathrm{LaAlO}}_{3}$ and ${\mathrm{SrTiO}}_{3}$ by ${90}^{\ensuremath{\circ}}$ off-axis sputtering in an Ar atmosphere. At a growth pressure of 0.04 mbar the interface is metallic, with
Autor:
Pavlo Zubko, Marios Hadjimichael, Yan Liu, A. J. H. van der Torren, Andrea D. Caviglia, Francesco Maccherozzi, Nicola Manca, Giordano Mattoni, Chunhai Yin, Sara Catalano, Marta Gibert, Sarnjeet S. Dhesi
Publikováno v:
Physical Review Materials
Physical Review Materials, 2(8)
Physical Review Materials, 2(8), 085002
Physical review materials, Vol. 2, No 8 (2018) P. 085002
Physical Review Materials, 2(8)
Physical Review Materials, 2(8), 085002
Physical review materials, Vol. 2, No 8 (2018) P. 085002
Strongly correlated materials show unique solid-state phase transitions with rich nanoscale phenomenology that can be controlled by external stimuli. Particularly interesting is the case of light–matter interaction in the proximity of the metal–i
Autor:
Laurens M. Boers, Sense Jan van der Molen, Chunhai Yin, Johannes Jobst, Jan Aarts, Rudolf M. Tromp
Publikováno v:
Ultramicroscopy, 200, 43-49
For many applications, it is important to measure the local work function of a surface with high lateral resolution. Low-energy electron microscopy is regularly employed to this end since it is, in principle, very well suited as it combines high-reso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c9ce5ffd06f17d91bf203c928121506
Autor:
Chencheng Xu, Jan Aarts, Chunhai Yin, Zhaoliang Liao, Nicolas Gauquelin, A. J. H. van der Torren, S. J. van der Molen
Publikováno v:
Physical Review Materials
The two-dimensional electron gas occurring between the band insulators SrTiO3 and LaAlO3 continues to attract considerable interest, due to the possibility of dynamic control over the carrier density and due to ensuing phenomena such as magnetism and
Publikováno v:
Materials Letters. 114:22-25
Ferromagnetic GaN:Er films have been successfully fabricated by implanting Er+ into unintentionally-doped GaN, and subsequent rapid thermal annealing at 800 °C. No secondary phase was observed within the sensitivity of XRD analysis. HRXRD results sh