Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Chung-Yu Chiu"'
Autor:
Chia-Hung Lee, Erh-Ju Lin, Jyun-Yang Wang, Yi-Xuan Lin, Chen-Yu Wu, Chung-Yu Chiu, Ching-Yu Yeh, Bo-Rong Huang, Kuan-Lin Fu, Cheng-Yi Liu
Publikováno v:
Nanomaterials, Vol 11, Iss 7, p 1630 (2021)
Tensile tests were carried on the electroplated Cu films with various densities of twin grain boundary. With TEM images and a selected area diffraction pattern, nano-twinned structure can be observed and defined in the electroplated Cu films. The den
Externí odkaz:
https://doaj.org/article/890066b2ded346778f4a399fb5dd9352
Autor:
Chung-Yu Chiu, 邱琮祐
107
Czochralski (Cz) method is widely used for the production of high quality silicon single crystal. Under high temperature condition of growth process, the undesirable impurities, such as oxygen and carbon, enter the silicon melt and their con
Czochralski (Cz) method is widely used for the production of high quality silicon single crystal. Under high temperature condition of growth process, the undesirable impurities, such as oxygen and carbon, enter the silicon melt and their con
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/ufce4k
Autor:
Chung-Yu Chiu, 邱鏛玉
98
Research purpose: In view of the fact that the 21st century is the lifelong learning Century. Facing new challenges of the modern era, a vital society would require not only its people to continuously advance in his/her field, but also effici
Research purpose: In view of the fact that the 21st century is the lifelong learning Century. Facing new challenges of the modern era, a vital society would require not only its people to continuously advance in his/her field, but also effici
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/08815498667621084087
Autor:
Chung-yu Chiu, 邱崇宇
96
The growth of humanity and its race for economic development bring out the question of a more efficient allocation of limited resources. With the time, political, economical, scientifical, technological or social development has pushed to cro
The growth of humanity and its race for economic development bring out the question of a more efficient allocation of limited resources. With the time, political, economical, scientifical, technological or social development has pushed to cro
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/82490459833942243578
Autor:
Chia Hung Lee, J. S. Chang, Y. X. Lin, C. Y. Wu, J. Y. Wang, C. Y. Chen, T. H. Yen, Chung Yu Chiu, Ching Yu Yeh, Cheng Yi Liu, Bo Rong Huang, Kuan Lin Fu
Publikováno v:
Journal of Electronic Materials. 50:6584-6589
The present work investigated the effect of Ag additives on the consumption of cathode Cu pad under electromigration in a current-stressed Cu/Sn3.5Ag/Cu flip-chip structure. The consumption rate of a cathode Cu pad in a pure Sn system is faster than
Autor:
C. Y. Wu, Cheng Yi Liu, Bo Rong Huang, Kuan Lin Fu, Chia Hung Lee, Y. X. Lin, Ching Yu Yeh, J. S. Chang, Chung Yu Chiu, J. Y. Wang
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:18605-18615
Typically, Sn cannot be finished on Ni and Ag surfaces via the immersion process. In this work, through galvanic reaction, immersion Sn finish was processed on an immersion Ag finish coexisting with a Ni surface. Herein, the detailed mechanism of the
Autor:
Chia Hung Lee, C. Y. Wu, Y. X. Lin, Chung Yu Chiu, J. Y. Wang, Cheng Yi Liu, Bo Rong Huang, Ching Yu Yeh
Publikováno v:
Journal of the American Ceramic Society. 104:1707-1715
Autor:
Y. X. Lin, J. Y. Wang, E. J. Lin, Ching Yu Yeh, Pai Jung Chang, Chung Yu Chiu, C. Y. Wu, Cheng Yi Liu, Chia Hung Lee
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:567-576
The effect of Ag solutes on the solid-state Cu dissolution in the Sn3.5Ag solder was studied. The solid-state Cu dissolution depends on the dissolution of the interfacial Cu6Sn5 compound layer, which is constant with time. In a low annealing temperat
Autor:
M. L. Cheng, Cheng Yi Liu, J. Y. Wang, C. Y. Hsiao, W. X. Zhuang, A. L. Liu, Ching Yu Yeh, Y. K. Tang, Y. H. Chen, C. Y. Wu, E. J. Lin, Chia Hung Lee, Chung Yu Chiu, Y. X. Lin
Publikováno v:
Journal of Electronic Materials. 49:26-33
In this work, the effect of the chemical additives (surfactant, stabilizer) on the corrosion resistance of the Ni(P) layer was investigated. The average O content at the depth of 1 nm of the tested Ni(P) specimens was used as the indication of the co
Autor:
Y. X. Lin, Chia Hung Lee, C. Y. Wu, Jui Sheng Chang, J. Y. Wang, Chung Yu Chiu, Ching Yu Yeh, Bo Rong Huang, Kuan Lin Fu, ChengYi Liu
Typically, Sn cannot be finished on Ni and Ag surfaces via the immersion process. In this work, through galvanic reaction, immersion Sn finish was processed on an immersion Ag finish coexisting with a Ni surface. Herein, the detailed mechanism of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4cea236d62cff8bf28886bef7bd1114
https://doi.org/10.21203/rs.3.rs-308958/v1
https://doi.org/10.21203/rs.3.rs-308958/v1