Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Chung-Sen Wu"'
Publikováno v:
Materials Chemistry and Physics. 68:17-21
The microstructure effects on the performance of the PtSi Schottky barrier detector (SBD) have been investigated in detail. The growth temperatures were ranged from 350 to 550C. The thickness of the PtSi film measured by high resolution transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3c8f4b083af6fe1303df846086bc44f
https://doi.org/10.1016/s0254-0584(00)00350-3
https://doi.org/10.1016/s0254-0584(00)00350-3
Autor:
null Hwann-kaeo Chiou, null Chi-Yang Chang, null Hwan-Min Liu, null Pao-Kuei Horng, null Te-Hui Wang, null Chung-Sen Wu
Publikováno v:
International Electron Devices and Materials Symposium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd8563aec9dd410be4e4e2af14b4ec25
https://doi.org/10.1109/edms.1994.863845
https://doi.org/10.1109/edms.1994.863845
Publikováno v:
International Electron Devices and Materials Symposium.
In this paper, two types of MMIC voltage controlled oscillators have been successfully demonstrated. The first chip with single tuning diode shows the excellent tuning linearity. The second chip with two tuning diodes can improve the tuning bandwidth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f43ee5a181fdb8ef94267ab46d8f8c24
https://doi.org/10.1109/edms.1994.771299
https://doi.org/10.1109/edms.1994.771299
Publikováno v:
International Electron Devices and Materials Symposium.
A two stage X-Band with 20 % efficient power amplifier is fabricated with 0.5 micron ion implant MESFET foundry process is presented. The amplifier shows 1 watt output power and 9 dB associated gain across the frequency band. The amplifier is monolit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d6625de14ffda18e7ee17eba7d15d51
https://doi.org/10.1109/edms.1994.771268
https://doi.org/10.1109/edms.1994.771268
Publikováno v:
Proceedings of the 4th International Symposium on Electronic Materials and Packaging, 2002..
This paper presents the analysis and modeling techniques of broad side coupling structures fabricated with LTCC technique. By applying multi-conductor C-matrix and L-matrix extraction techniques to model small segment of two conductors vertically sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3c002856161a14c02698a037088cfda
https://doi.org/10.1109/emap.2002.1188871
https://doi.org/10.1109/emap.2002.1188871
Publikováno v:
Proceedings of the 4th International Symposium on Electronic Materials & Packaging, 2002; 2002, p391-396, 6p
Publikováno v:
APMC 2001. 2001 Asia-Pacific Microwave Conference (Cat. No.01TH8577); 2001, p554-554, 1p
Publikováno v:
International Electron Devices & Materials Symposium; 1994, p11-11, 1p
Publikováno v:
International Electron Devices & Materials Symposium; 1994, p11-11, 1p
Publikováno v:
International Electron Devices & Materials Symposium; 1994, p7-7, 1p