Výsledky vyhledávání - "Chung-I Yang"

Akademický článek

Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors

Autor: Chung-I. Yang, Ting-Chang Chang, Po-Yung Liao, Li-Hui Chen, Bo-Wei Chen, Wu-Ching Chou, Guan-Fu Chen, Sung-Chun Lin, Cheng-Yen Yeh, Cheng-Ming Tsai, Ming-Chang Yu, Shengdong Zhang

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 6, Pp 685-690 (2018)

This investigation considers a method to ameliorate drain induced barrier lowing behavior in amorphous-indium-gallium-zinc-oxide thin-film transistors. The Vth is found to shift negatively when increasing the ID-VG measurement condition VD from 0.1 t

Externí odkaz: https://doaj.org/article/d2f113e1ff8d46f38ccfc5144977f326

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Gate Modulation of Excitatory and Inhibitory Synaptic Plasticity in a Low-Temperature Polysilicon Thin Film Synaptic Transistor

Autor: Jia Chen, Hsiao-Cheng Chiang, Nian Duan, Shin-Ping Huang, Chung-I Yang, Xiangshui Miao, Yi Li, Ting-Chang Chang, Kang-Sheng Yin

Publikováno v: ACS Applied Electronic Materials. 1:132-140

Neuromorphic computing with intelligent power-efficient data processing has become an innovative technology to overcome the performance bottleneck of traditional von Neumann-type computing architecture. As an essential element to construct a neuromor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::545383ed08f1cad0569abd53743d9ba5
https://doi.org/10.1021/acsaelm.8b00060

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Combined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film Transistors

Autor: Shengdong Zhang, Hsi-Wen Liu, Chung-I Yang, Ting-Chang Chang, Guan-Fu Chen, Ying-Hsin Lu, Shin-Ping Huang, Yu-Xuan Wang, Wu-Ching Chou, Chien-Yu Lin, Yu-Zhe Zheng, Bo-Wei Chen, Yu-Shan Lin, Po-Yung Liao

Publikováno v: IEEE Transactions on Electron Devices. 65:533-536

This paper utilizes electrical analyses and a study of physical mechanisms to investigate metal gate structure-dependent performance in amorphous InGaZnO (a-IGZO) thin-film transistors. The effects of different shielding areas between the IGZO layer

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a30a67daa978dc5bc193c296fd246cd7
https://doi.org/10.1109/ted.2017.2786144

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Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors

Autor: Li-Hui Chen, Cheng-Ming Tsai, Guan-Fu Chen, Po-Yung Liao, Sung-Chun Lin, Chung-I Yang, Shengdong Zhang, Ming-Chang Yu, Cheng-Yen Yeh, Ting-Chang Chang, Bo-Wei Chen, Wu-Ching Chou

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 6, Pp 685-690 (2018)

This investigation considers a method to ameliorate drain induced barrier lowing behavior in amorphous-indium-gallium-zinc-oxide thin-film transistors. The $V_{\mathrm{ th}}$ is found to shift negatively when increasing the $I _{D}$ – $V _{G}$ meas

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5a393d58d0d1303bc36610a93aa08bb
https://ieeexplore.ieee.org/document/8360776/

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Investigating degradation behaviors induced by hot carriers in the etch stop layer in amorphous InGaZnO thin film transistors with different electrode materials and structures

Autor: Cheng Ming Tsai, Ting-Chang Chang, Wu-Ching Chou, Bo Wei Chen, Sung Chun Lin, Chia Sen Chang, Chung I. Yang, Cheng Yen Yeh, Po Yung Liao, Ming Chang Yu

Publikováno v: Thin Solid Films. 644:45-51

This work investigates the hot carrier effect in via-contact type amorphous indium gallium zinc oxide thin film transistors with various source/drain materials and structures. According to previous research, the redundant drain electrode plays an imp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7e3adb81679dadd5b27fdcb096f9119f
https://doi.org/10.1016/j.tsf.2017.08.053

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Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors

Autor: Hua-Mao Chen, Terry Tai-Jui Wang, Hung Wei Li, Shin-Ping Huang, Ann-Kuo Chu, Hsiao-Cheng Chiang, Po-Yung Liao, Ting-Chang Chang, T. C. Chang, Chih-Hung Tsai, Chung-I Yang, Yu-Ho Lin, Kuan-Chang Chang, Hui-Chun Huang, Yu-Zhe Zheng, Bo-Wei Chen, Yu-Ju Hung, Hsueh-Hsing Lu

Publikováno v: ACS applied materialsinterfaces. 9(13)

The surface morphology in polycrystalline silicon (poly-Si) film is an issue regardless of whether conventional excimer laser annealing (ELA) or the newer metal-induced lateral crystallization (MILC) process is used. This paper investigates the stres

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2cb887e6bd347f28568034383d1c2a96
https://pubmed.ncbi.nlm.nih.gov/28177598

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Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors

Autor: Yu-Chieh Chien, Sung-Chun Lin, Kuan Fu Chen, Yu-Ching Tsao, Chung-I Yang, Hsiao-Cheng Chiang, Shengdong Zhang, Ting-Chang Chang, Po-Yung Liao, Yi-Chieh Yang, Kuan-Chang Chang, Yu-Ju Hung, Bo-Wei Chen, Tsung-Ming Tsai, Cheng-Yen Yeh

Publikováno v: Applied Physics Letters. 111:133504

This letter investigates the effect of negative bias temperature stress (NBTS) on amorphous InGaZnO4 thin film transistors with copper electrodes. After 2000 s of NBTS, an abnormal subthreshold swing and on-current (Ion) degradation is observed. The

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1e59f32fe2d4e2635af40e3c80988f3c
https://doi.org/10.1063/1.5004526

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