Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Chung-Hu Ge"'
Autor:
Horng-Chih Lin, Tiao Yuan Huang, Hung-Wei Chen, Chih-Hsin Ko, Hong-Nien Lin, Chung-Hu Ge, Wen-Chin Lee
Publikováno v:
IEEE Electron Device Letters. 27:659-661
The correlation between channel mobility gain (Deltamu), linear drain-current gain (DeltaIdlin), and saturation drain-current gain (DeltaIdsat) of nanoscale strained CMOSFETs are reported. From the plots of DeltaIdlin versus DeltaIdsat and ballistic
Autor:
Chung-Hu Ge, Hong-Nien Lin, Tiao Yuan Huang, Hung-Wei Chen, Horng-Chih Lin, Wen-Chin Lee, Chih-Hsin Ko
Publikováno v:
IEEE Electron Device Letters. 26:676-678
Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs are reported for the first time. Channel backscattering ratio increases and decreases under uniaxial tensile and compressive strain, respectively. It is found that in su
Autor:
Kangzhan Zhang, Chung-Hu Ge, Kenneth Wu, C.H. Ko, C.N. Ye, T.M. Kuan, Wen-Chin Lee, Hung-Wei Chen, Sean M. Seutter, Chun-Yu Wu, G. Tsai, T.J. Wang
Publikováno v:
2008 Symposium on VLSI Technology.
State-of-the-art low-K spacer technology featuring novel CVD-SiBCN material is demonstrated for the first time. A significant 20% CMOS ring speed enhancement is demonstrated with SiBCN (K=5.2) spacer, compared to Si3N4 (K=7.5) spacer, due to reduced
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
We have demonstrated successfully the integration scheme of metallized source/drain extension (M-SDE) with state-of-the-art strained-Si technique. Drain currents of N-FET (Lgate = 40 nm) and P-FET (Lgate = 35 nm) with M-SDE can achieve 1620 muA/mum a
Autor:
Horng-Chih Lin, Chung-Hu Ge, Tiao Yuan Huang, Hong-Nien Lin, Wen-Chin Lee, Chih-Hsin Ko, Hung-Wei Chen
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
Channel backscattering ratios of PMOSFETs with various embedded SiGe source/drain structures are analyzed in terms of the scattering theory. We found that both the backscattering ratio and injection velocity are greatly influenced by the location and
Autor:
Hong-Nien Lin, Chih-Hsin Ko, Hung-Wei Chen, Horng-Chih Lin, Tiao Yuan Huang, Chung-Hu Ge, Wen-Chin Lee
Publikováno v:
2006 International Symposium on VLSI Technology, Systems, and Applications.
The channel backscattering ratios as well as the ballistic efficiency of strained CMOSFETs were studied for both nondegenerate and degenerate-limited cases. We found that the simple nondegenerate assumption can predict strain-induced change of ballis
Autor:
Hung-Wei Chen, Horng-Chih Lin, Denny Tang, Chih-Hsin Ko, Chung-Hu Ge, Wen-Chin Lee, Tiao Yuan Huang, Hong-Nien Lin
Publikováno v:
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
The influence of uniaxial process-induced strain on carrier channel backscattering in nanoscale MOSFETs is reported for the first time. It is observed that the backscattering ratio can be reduced by uniaxial tensile strain while it is increased by un
Autor:
Chun-Chieh Lin, Hong-Nien Lin, Tiao-Yuan Huang, Chung-Hu Ge, Chih-Hsin Ko, Chien-Chao Huang, Horng-Chih Lin
Publikováno v:
Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Autor:
Yee-Chia Yeo, Chien-Chao Huang, Tien-Chih Chang, Chao-Hsiung Wang, Shih-Chang Chen, Chung-Hu Ge, Mong-Song Liang, Liang-Gi Yao, Chenming Hu, Fu-Liang Yang, Chun-Chieh Lin
Publikováno v:
Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials.
Autor:
Chih-Hsin Ko, Hung-Wei Chen, Tiao Yuan Huang, Hong Nien Lin, Horng-Chih Lin, Chung-Hu Ge, Wen-Chin Lee
Publikováno v:
Japanese Journal of Applied Physics. 45:8611
This work investigates the impact of different uniaxial strain polarities on channel backscattering in nanoscale complementary metal oxide semiconductor field-effect transistor (CMOSFET). Two carrier statistics, nondegenerate and degenerate-limited,