Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Chung-Hsu Chen"'
Autor:
Chung-Hsu Chen, 陳重旭
96
This paper establishes lubrication diagnose expert system by an expert system software called “DRAMA”, and“MATLAB” programming language. The lubrication diagnose expert system built in this study can achieve following benifits from th
This paper establishes lubrication diagnose expert system by an expert system software called “DRAMA”, and“MATLAB” programming language. The lubrication diagnose expert system built in this study can achieve following benifits from th
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/99774219371236444766
Akademický článek
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Publikováno v:
Knowledge-Based Systems. 163:800-810
We present an integrated approach to cluster and visualize character networks in fiction with the aid of computational and statistical methods. An unsupervised clustering algorithm, minimum span clustering (MSC), was applied to cluster fictional char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4934b1c2047ac36fd785db9b8cdc81e9
https://doi.org/10.1016/j.knosys.2018.10.005
https://doi.org/10.1016/j.knosys.2018.10.005
Autor:
Wing Yau, Dave Wang, Yuefei Yang, Robert Sadler, Daniel Hou, Ai Duong, William Sutton, Shiguang Wang, Chung-hsu Chen, JeoungChill Shim
Publikováno v:
Solid-State Electronics. 126:115-124
Modern communication systems require high linearity, usually in addition to high output power. High linearity requires a flat device transconductance (gm) vs. gate-source voltage (Vgs), while at the same time, transconductance must be high for high g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67b6088ae7c43eeeb710620fef09fa4b
https://doi.org/10.1016/j.sse.2016.09.005
https://doi.org/10.1016/j.sse.2016.09.005
Autor:
Daniel Hou, Shiguang Wang, Chung-hsu Chen, Yuefei Yang, Tingyi Wu, Dave Wang, Wing Yau, Mo Wu, Benjamin Ou, Robert Sadler, Rex Chen
Publikováno v:
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
To model drain IV characteristics, the temperature dependence is important for GaN HEMT. We show that the time dependence should also be included in the modeling approach. In this paper, we use the trap information obtained from current transient spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04aaa8c59a576f16fbf1745368422264
https://doi.org/10.1109/csics.2017.8240427
https://doi.org/10.1109/csics.2017.8240427
Autor:
Dave Wang, Shiguang Wang, JeoungChill Shim, Chung-hsu Chen, William Sutton, Robert Sadler, Yuefei Yang, Daniel Hou, Wing Yau
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
A typical GaN HEMT forward gate current can be described by a simplified model, i.e., a Schottky diode with a parasitic resistance. This model, though, fails to fit certain GaN HEMT devices, noticeably those with AlN spacer. The Tsu-Esaki tunneling m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de158ef8a8a473449b9c973632c2ffe0
https://doi.org/10.1109/csics.2016.7751071
https://doi.org/10.1109/csics.2016.7751071
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 52:1414-1424
Two monolithic 3-bit active phase shifters using the vector sum method to K-band frequencies are reported in this paper. They are separately implemented using commercial 6-in GaAs HBT and high electron-mobility transistor (HEMT) monolithic-microwave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96879c20c56224b4f23b08bfa45b8187
https://doi.org/10.1109/tmtt.2004.827010
https://doi.org/10.1109/tmtt.2004.827010
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 52:908-919
Reflection-type binary phase-shift keying and in-phase and quadrature modulator monolithic microwave integrated circuits (MMICs) are reported in this paper. These MMICs are fabricated by 1-/spl mu/m HBT process and evaluated successfully under vector
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43964eb8b8329ab5d0f91fc26d4b58ea
https://doi.org/10.1109/tmtt.2004.823573
https://doi.org/10.1109/tmtt.2004.823573
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 50:2564-2568
An InGaP-GaAs heterojunction bipolar transistor (HBT) analog multiplier/mixer monolithic microwave integrated circuit (MMIC) is developed that adopts a Gilbert-cell multiplier with broad-band input-matching networks to widen the bandwidth up to 17 GH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::978fc473317d47429a26a4450535d530
https://doi.org/10.1109/tmtt.2002.804506
https://doi.org/10.1109/tmtt.2002.804506
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest, 2003.
A broadband 50-110 GHz HBT MMIC IQ modulator and a vector signal measurement system for millimeter-wave applications are reported in this paper. For the digital modulation measurement, a QPSK modulation format was used with a 2-Mbps data rate for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::357a7539627ee231143bd20304775efa
https://doi.org/10.1109/mwsym.2003.1210892
https://doi.org/10.1109/mwsym.2003.1210892