Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Chung-En Tsai"'
Autor:
Yu-Rui Chen, Bo-Wei Huang, Chun-Yi Cheng, Wan-Hsuan Hsieh, Chung-En Tsai, Chien-Te Tu, Yi-Chun Liu, C. W. Liu
Publikováno v:
IEEE Transactions on Electron Devices. 69:3611-3616
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97c9fcb9b4818bec4c839bc48d2d1b2c
https://doi.org/10.1109/ted.2022.3177386
https://doi.org/10.1109/ted.2022.3177386
Autor:
Chien-Te Tu, Wan-Hsuan Hsieh, Bo-Wei Huang, Yu-Rui Chen, Yi-Chun Liu, Chung-En Tsai, Shee-Jier Chueh, C. W. Liu
Publikováno v:
IEEE Electron Device Letters. 43:682-685
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2726fb35a3c26fa083aee2135793635
https://doi.org/10.1109/led.2022.3159268
https://doi.org/10.1109/led.2022.3159268
Autor:
Bo-Wei Huang, Chung-En Tsai, Yi-Chun Liu, Chien-Te Tu, Wan-Hsuan Hsieh, Sun-Rong Jan, Yu-Rui Chen, Shee-Jier Chueh, Chun-Yi Cheng, C. W. Liu
Publikováno v:
IEEE Transactions on Electron Devices. 69:2130-2136
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5deac67a9d51c69b65aa8fcc00b7014
https://doi.org/10.1109/ted.2022.3144105
https://doi.org/10.1109/ted.2022.3144105
Autor:
Yi-Chun Liu, Jyun-Yan Chen, Shee-Jier Chueh, Bo-Wei Huang, Chung-En Tsai, Chun-Yi Cheng, Chien-Te Tu, C. W. Liu
Publikováno v:
IEEE Transactions on Electron Devices. 68:6599-6604
The eight stacked Ge $_{0.75}$ Si $_{0.25}$ nanosheets, the seven stacked Ge $_{0.95}$ Si $_{0.05}$ nanowires, and the six stacked Ge $_{0.95}$ Si $_{0.05}$ nanowires without parasitic channels are demonstrated. These highly stacked channels are made
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6897a52c6dce1e282ba7d4683b0f7fb
https://doi.org/10.1109/ted.2021.3110838
https://doi.org/10.1109/ted.2021.3110838
Autor:
Chien-Te Tu, Yi-Chun Liu, Bo-Wei Huang, Yu-Rui Chen, Wan-Hsuan Hsieh, Chung-En Tsai, Shee-Jier Chueh, Chun-Yi Cheng, Yichen Ma, C. W. Liu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6db3274e95163cdaf9bdbc670b0392d4
https://doi.org/10.1109/iedm45625.2022.10019532
https://doi.org/10.1109/iedm45625.2022.10019532
Autor:
Chung-En Tsai, Chun-Yi Cheng, Bo-Wei Huang, Hsin-Cheng Lin, Tao Chou, Chien-Te Tu, Yi-Chun Liu, Sun-Rong Jan, Yu-Rui Chen, Wan-Hsuan Hsieh, Kung-Ying Chiu, Shee-Jier Chueh, C. W. Liu
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1f33a9c43525abcdb11726cbff5a6a8
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830357
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830357
Autor:
Chien-Te Tu, C. W. Liu, Fang-Liang Lu, Hung-Yu Ye, Jyun-Yan Chen, Yu-Shiang Huang, Chung-En Tsai, Chun-Yi Cheng
Publikováno v:
IEEE Transactions on Electron Devices. 68:2071-2076
The undoped 4-stacked Ge0.9Sn0.1 nanosheets sandwiched by double Ge0.95Sn0.05 caps without parasitic Ge channels underneath are realized by a radical-based highly selective isotropic dry etching. Highly inter-channel uniformity of the stacked GeSn na
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4212a77a152e1436fc1920b598dd2a9e
https://doi.org/10.1109/ted.2021.3050430
https://doi.org/10.1109/ted.2021.3050430
Autor:
Chun-Yi Cheng, Wan-Hsuan Hsieh, Bo-Wei Huang, Yi-Chun Liu, Chien-Te Tu, Chung-En Tsai, Shee-Jier Chueh, Guan-Hua Chen, C. W. Liu
Publikováno v:
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::855e7035772ad7e13651499adad02d78
https://doi.org/10.1109/vlsi-tsa54299.2022.9770969
https://doi.org/10.1109/vlsi-tsa54299.2022.9770969
Publikováno v:
IEEE Transactions on Electron Devices. 67:5053-5058
The low contact resistivity with the median value of $3.1\times 10^{-{9}}\,\,\Omega \cdot \text {cm}^{{2}}$ (the lowest value of $1.1\times 10^{-{9}}\,\,\Omega \cdot \text {cm}^{{2}}$ ) is achieved by Ti metal contact to in-situ B-doped GeSn with B s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84bc275d23819d76d59ed1bc275cd1c1
https://doi.org/10.1109/ted.2020.3019977
https://doi.org/10.1109/ted.2020.3019977
Autor:
Chung-En Tsai, Yi-Chun Liu, Chien-Te Tu, Bo-Wei Huang, Sun-Rong Jan, Yu-Rui Chen, Jyun-Yan Chen, Shee-Jier Chueh, Chun-Yi Cheng, Chia-Jung Tsen, Yichen Ma, C. W. Liu
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35c31203f6cba2076d95a07504ef6828
https://doi.org/10.1109/iedm19574.2021.9720660
https://doi.org/10.1109/iedm19574.2021.9720660