Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Chung Yu Lu"'
Autor:
Desmaris, Vincent, Jin-Yu Shiu, Chung-Yu Lu, Rorsman, Niklas, Zirath, Herbert, Chang, Edward-Yi
Publikováno v:
Journal of Applied Physics; 8/1/2006, Vol. 100 Issue 3, p034904, 4p, 6 Black and White Photographs, 1 Graph
Autor:
Chung Yu Lu, Chia Ta Chang, Edward Yi Chang, Yi Chung Chen, Teng Tung Hsu, Ting Hung Hsu, Jui Chien Huang
Publikováno v:
ECS Transactions. 19:69-75
Field-plated (FP) AlGaN/GaN high electron mobility transistor (HEMT) has been fabricated and characterized for microwave applications. After the implement of the FP structure, lower trans-conductance (Gm) was observed on DC and small signal character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef0ad80aefb2816ef42b032cd4b5b983
https://doi.org/10.1149/1.3248350
https://doi.org/10.1149/1.3248350
Publikováno v:
Journal of Electronic Materials. 37:624-627
Tungsten, stoichiometric W2N, and nitrogen-rich W2N films were used as Schottky contacts on AlGaN/GaN heterostructures. The nitrogen content in the film was controlled by varying the nitrogen-to-argon gas flow ratio during the reactive sputter deposi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cce247628da4eff7599e91d5b8b51bb1
https://doi.org/10.1007/s11664-008-0384-9
https://doi.org/10.1007/s11664-008-0384-9
Publikováno v:
ACS applied materialsinterfaces. 6(5)
A polyacrylonitrile (PAN)-interpenetrating cross-linked polyoxyethylene (PEO) network (named XANE) was synthesized acting as separator and as gel polymer electrolytes simultaneously. SEM images show that the surface of the XANE membrane is nonporous,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ffaf3c77450d38adae8712212c7e79b
https://pubmed.ncbi.nlm.nih.gov/24521309
https://pubmed.ncbi.nlm.nih.gov/24521309
Autor:
Yu-Lin Hsiao, Shih-Kuang Hsiao, Huang-Choung Chang, Jui-Chien Huang, Chia-Ta Chang, Chung-Yu Lu, Edward Yi Chang, Kai-Wen Cheng, Ching-Ting Lee
Publikováno v:
IEEE Photonics Technology Letters. 21:1366-1368
This letter investigates 460-nm InGaN-based light-emitting diodes (LEDs) grown on a hemisphere-shape- patterned sapphire substrate (HPSS) with submicrometer spacing. The full-width at half-maximum of the (102) plane rocking curves for GaN layer grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65f1237ddb3c6451fd8dbb54824bd0ed
https://doi.org/10.1109/lpt.2009.2026728
https://doi.org/10.1109/lpt.2009.2026728
Autor:
Edward Yi Chang, Chung-Yu Lu, Chia-Ta Chang, Shih-Kuang Hsiao, Jui-Chien Huang, Ching-Ting Lee
Publikováno v:
IEEE Electron Device Letters. 30:213-215
This letter investigates the characteristics of unpassivated AlGaN/GaN high-electron mobility transistors (HEMTs) under uniaxial tensile strain. Mechanical stress can produce additional charges that change the HEMT channel current. This phenomenon is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34f4a9a6bc209bf3aee40ed7f5e688da
https://doi.org/10.1109/led.2009.2012447
https://doi.org/10.1109/led.2009.2012447
Autor:
Chung-Yu Lu, Edward Yi Chang, Chia-Ta Chang, Herbert Zirath, Niklas Rorsman, Jin-Yu Shiu, Toshiki Makimoto, Jui-Chien Huang, Kazuhide Kumakura, Vincent Desmaris
Publikováno v:
IEEE Electron Device Letters. 28:476-478
A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of high- power microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4118280e53c3d4b6ad9f840a37ca3345
https://doi.org/10.1109/led.2007.896904
https://doi.org/10.1109/led.2007.896904
Autor:
Jui-Chien Huang, Yu Sheng Chiu, Chia-Ta Chang, Tai Ming Lin, Chung-Yu Lu, Yu-Ting Chou, Edward Yi Chang
Publikováno v:
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE).
We present the Rf characteristics of 0.7-μm gate length n-GaN/AlGaN/GaN high-electron mobility transistors (HEMTs) with different source-drain spacing tested under different temperatures. The 7-μm source-drain spacing device demonstrated 800 mA/mm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::445791d4aaf16825af6b9e6dd575026e
https://doi.org/10.1109/smelec.2012.6417174
https://doi.org/10.1109/smelec.2012.6417174
Autor:
Chia-Ta Chang, Yasuyuki Miyamoto, Chung-Yu Lu, Jui-Chien Huang, Chien-I Kuo, Edward Yi Chang, Heng-Tung Hsu
Publikováno v:
IEEE Electron Device Letters. 31(No. 2)
We demonstrate a 100-nm-gate-recessed n-GaN/AlGaN/GaN high-electron mobility transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a low ohmic-contact resistance of 0.28 ?·mm and a low gate leakage current of 0.9 ?A/m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e377e219e5c53a985074ed072a965bc
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100601396
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100601396
Autor:
Soun Cheng Wang, Huang Yuan Chang, Pei Chia Huang, Chao Hao Cheng, Chung Yu Lu, Chung Li Chen, Tsung Yao Kao
Publikováno v:
Medicine & Science in Sports & Exercise. 43:631-632
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34151902101738ab71231c29df1143df
https://doi.org/10.1249/01.mss.0000401745.96078.98
https://doi.org/10.1249/01.mss.0000401745.96078.98