Zobrazeno 1 - 10
of 230
pro vyhledávání: '"Chung Wen Lan"'
Publikováno v:
Materials, Vol 5, Iss 2, Pp 227-238 (2012)
Mg, Fe co-doped near-stoichiometric lithium tantalite (SLT) single crystals were grown by employing the zone-leveling Czochralski (ZLCz) technique. The optical properties, holographic parameters, as well as the composition of the grown crystals were
Externí odkaz:
https://doaj.org/article/abb519e8358846b0807d6973d56665a2
Publikováno v:
Heliyon, Vol 10, Iss 13, Pp e33612- (2024)
Silicon oxycarbide (SiOC) exhibits good retention and a reasonable specific capacity and is an alternative to silicon used as an anode material for high-performance lithium-ion batteries. However, SiOC generally shows a low Initial Coulombic Efficien
Externí odkaz:
https://doaj.org/article/318532aac8c4457d8db11bd73facf664
Publikováno v:
ChemElectroChem, Vol 11, Iss 6, Pp n/a-n/a (2024)
Abstract The rapid increase in global energy storage demands has necessitated the adoption of next‐generation lithium‐ion battery anode materials. However, these anode materials′ high lithium loss and poor cycling stability hinder their commerc
Externí odkaz:
https://doaj.org/article/1bac32c0421648e2a9a9c014beeedf48
Publikováno v:
Silicon. 14:5673-5681
Hydrogen peroxide (H2O2) plays a vital role in some of the metal assisted chemical etching (MACE) processes for silicon. However, it evaporates easily during etching at higher temperatures and this makes the process difficult to control. As a result,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8d5b1c8f90bb32c1a09874ab3f75e7a
https://doi.org/10.1007/s12633-021-01348-1
https://doi.org/10.1007/s12633-021-01348-1
Publikováno v:
Silicon. 13:3121-3129
Inverted pyramid (IP) texturization on silicon wafers has recently attracted attention for the structure’s light trapping ability and low specific surface area. The later property minimizes undesired carrier recombination for solar cells. Wet chemi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecc5f9a167b0be84d71dea8fe17dcb4f
https://doi.org/10.1007/s12633-020-00650-8
https://doi.org/10.1007/s12633-020-00650-8
Autor:
Pi‐Chen Tsai, Po‐Yu Liang, Allen Yang, Chung-Wen Lan, Pei‐Yu Sun, Hsiao Ping Hsu, Agustina Sutejo
Publikováno v:
Progress in Photovoltaics: Research and Applications. 28:993-1000
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df2e416a508c9cb584bd5d67e2dd0763
https://doi.org/10.1002/pip.3302
https://doi.org/10.1002/pip.3302