Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Chung Tae Kim"'
Autor:
Young Jun Kim, Chung Tae Kim
Publikováno v:
International Journal of Software Engineering and Knowledge Engineering. 14:277-290
This study aimed to design a software reuse system by case-based reasoning (CBR) in order to reuse object models in system analysis. We developed a system including the methods and procedures for reusing object models, and also proposed how to expres
Publikováno v:
Journal of Applied Physics. 91:1166-1170
Influence of strain relaxation on structural and optical properties of the InGaN/GaN multiple quantum wells (MQWs) with high indium composition grown by metalorganic chemical vapor deposition was investigated. From photoluminescence and transmission
Publikováno v:
Journal of The Electrochemical Society. 144:664-669
A rapid thermal processing (RTP) method to improve the barrier properties of collimated titanium nitride (TiN) was studied. The RTP for the collimated TiN shows a significantly improved diffusion barrier property with reduced electrical contact resis
Publikováno v:
European Journal of Operational Research. 79:431-442
A two-stage screening procedure is developed for a situation where an item is sold in one of two markets or scrapped. The item's selling price and product specifications are different in both markets. In the first stage of the procedure, each item is
Autor:
Sang-Wook Lee, Jung-Ho Lee, Jun-Mo Yang, Moon Seop Hyun, Xiaopeng Li, Han-Don Um, Sang-Won Jee, Syed Abdul Moiz, Jin-Young Jung, Yun Chang Park, Hong-Seok Seo, Kwang-Tae Park, Jong-Yeoul Ji, Chung Tae Kim
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
Periodically patterned co-integration of silicon microwires (MWs) and nanowires (NWs) were applied for a novel photo-voltaic (PV) nanodevice. The optical improvement due to antireflection enhancement with a graded-refractive-index (GRI) effect (see F
Publikováno v:
2008 10th Electronics Packaging Technology Conference.
Sold bump mold fabrication using Excimer laser (KrF, 248 nm) source for patterning method is presented. The mold is designed to make reflowed solder bump with diameter of 115 ?m for 8 inch wafer. We have developed CrOx / Cr binary metal masks which a
Autor:
Sung-Eun Hong, Chung-Tae Kim, Si-Bum Kim, Sam-Dong Kim, Su-Jin Oh, Ja-Chun Ku, Hyeong-Soo Kim
Publikováno v:
ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361).
/spl alpha/-Si Absorption Layer (AL) was used in the sub 0.18 /spl mu/m Shallow Trench Isolation (STI) patterning to improve the pattern uniformity without additional removal step. It was confirmed by the results of reflectivity simulation at 248 nm
Autor:
Young Jun Kim, Chung Tae Kim
Publikováno v:
Proceedings of the 2000 IEEE International Conference on Management of Innovation and Technology. ICMIT 2000. 'Management in the 21st Century' (Cat. No.00EX457).
In spite of object model is importance and usefulness, object modeling is a time consuming activity and requiring an extensive experience and expertise. Sometimes, the object models for similar business areas are analogous to one another. Therefore,
Autor:
Jeong Mo Hwang, Chung Tae Kim, Taekyung Kim, Sibum Kim, Heon-Do Kim, Moosung Chae, Sukjae Lee
Publikováno v:
Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407).
A issue related with the integration of PVD Al metallization with low k SiLK dielectrics was investigated. SiLK polymer material was severely damaged during RF etch pre-clean step which was performed to remove the AlOx layer formed on Al line in via
Autor:
Jeong-Mo Hwang, Chung-Tae Kim, Dae-Gyu Park, Heung-Jae Cho, Chan Lim, In-Seok Yeo, Jae-Sung Roh
Publikováno v:
2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).
This paper demonstrates characteristics of Al/sub 2/O/sub 3/ gate dielectric prepared by atomic layer deposition (ALD) for giga scale CMOS DRAM devices. Interface state density /spl sim/7/spl times/10/sup 10/ eV/sup -1/ cm/sup -2/ near the midgap and