Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Chung Kan Huang"'
Publikováno v:
SSRN Electronic Journal.
Autor:
John Peirce, Li Baohong, Sydney Autry, Gary Targac, David D. Smith, Courtney Gallo, Chung-Kan Huang
Publikováno v:
Day 3 Wed, October 28, 2020.
Waterflood conformance is a significant problem in the West Sak field of Alaska. Re-assembling Pre-Formed Particle Gels (RPPG) have been used to treat Void Space Conduits (VSC) and repair the "short-circuited" waterflood. These VSC’s are typically
Publikováno v:
SPE Journal. 21:2260-2275
Summary In the context of modeling fractured horizontal wells, unstructured grids have been applied to generate simulation meshes for complex fracture networks. It is necessary to investigate how to choose an unstructured mesh to accurately simulate
Publikováno v:
Applied Catalysis A: General. 321:125-134
The effects of modification of H-ZSM-5 on its catalytic performance in the conversion of ethylbenzene (EB) and m-xylene were studied. The methods of silica chemical vapor deposition and 5,6-benzoquinoline adsorption can inactivate the external surfac
Publikováno v:
Day 4 Thu, November 12, 2015.
In the context of multi-stage hydraulically fractured horizontal wells, unstructured grids such as PEBI (perpendicular bisector) grids or Voronoi grids have been widely applied to generate simulation meshes for fracture networks. In previous work we
Publikováno v:
ACS Symposium Series ISBN: 9780841225398
Scarcity of conventional oil reserves amidst increasing liquid fuel demand in the world have renewed interest in oil shale processing because of the massive accessible resources. In-situ oil shale production has a lessened environmental impact, and l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b52c927f9d740a782f8133e07979d08
https://doi.org/10.1021/bk-2010-1032.ch007
https://doi.org/10.1021/bk-2010-1032.ch007
Black-oil, compositional and thermal simulators have been developed to address different physical processes in reservoir simulation. A number of different types of discretization methods have also been proposed to address issues related to representi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f433707976d811eca21a022a61057cff
https://doi.org/10.2172/949977
https://doi.org/10.2172/949977
Autor:
Olayinka I. Ogunsola, Arthur M. Hartstein, Olubunmi Ogunsola, Emily Knaus, James Killen, Khosrow Biglarbigi, Peter Crawford, Peter M. Crawford, James C. Killen, William Gallin, M. Royhan Gani, Milind Deo, Nahid DS Gani, Michael D. Vanden Berg, James W. Bunger, Christopher P. Russell, Donald E. Cogswell, Alan K. Burnham, Jacob H. Bauman, Chung Kan Huang, Milind D. Deo, Roger L. Day, Michael P. Hardy, P. Henrik Wallman, Robert C. Ryan, Thomas D. Fowler, Gary L. Beer, Vijay Nair, W. A. Symington, R. D. Kaminsky, W. P. Meurer, G. A. Otten, M. M. Thomas, J. D. Yeakel, Adam R. Brandt, Jeremy Boak, David K. Olsen, Arthur Hartstein, David R. Alleman, Hitesh Mohan, Marshall Carolus, Jeffrey Stone, Kirsten Uchitel, John Ruple, Robert Keiter
Publikováno v:
All Days.
In a thermal-compositional reservoir simulator, pressures, saturations, temperature and compositions in all the existing phases must be solved. When this equation system is solved implicitly, a system of nonlinear equations results, which is solved b
Novel 20nm hybrid SOI/bulk CMOS technology with 0.183μm/sup 2/ 6T-SRAM cell by immersion lithography
Autor:
null Hou-Yu Chen, null Chang-Yun Chang, null Chien-Chao Huang, null Tang-Xuan Chung, null Sheng-Da Liu, null Jiunn-Ren Hwang, null Yi-Hsuan Liu, null Yu-Jun Chou, null Hong-Jang Wu, null King-Chang Shu, null Chung-Kan Huang, null Jan-Wen You, null Jaw-Jung Shin, null Chun-Kuang Chen, null Chia-Hui Lin, null Ju-Wang Hsu, null Bao-Chin Perng, null Pang-Yen Tsai, null Chi-Chun Chen, null Jyu-Horng Shieh, null Han-Jan Tao, null Shih-Chang Chen, null Tsai-Sheng Gau, null Fu-Liang Yang
Publikováno v:
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
For the first time, a novel hybrid SOI/bulk CMOS technology with 20nm gate length and low-leakage 1.3nm thick SiON gate dielectric has been developed for advanced SOC applications. 26% (for N-FET) and 35% (for P-FET) improvements of intrinsic gate de