Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Chung Gon Yoo"'
Autor:
Beom Hoan O, Chang-Jin Kang, Chin-Wook Chung, Dae-Kyu Choi, Joung Ho Lee, Suk-Ho Joo, Se-Geun Park, Jong Woo Lee, Junghoon Joo, Sung Kyeong Kim, Seung Gol Lee, Park Soon, Wan Jae Park, Duck Jin Chung, Chung-Gon Yoo, Joohee Kim, Sang-Deog Cho, Hyoun Woo Kim, Woon Suk Hwang, Jeong-Yeol Jang, Keeho Kim, Young-Chang Joo, Sung Pil Chang
Publikováno v:
Microelectronic Engineering. 85:300-303
We have investigated the characteristics of Ar/O"2 plasmas in terms of the photoresist (PR) and low-k material etching using a ferrite-core inductively coupled plasma (ICP) etcher. We found that the O"2/(O"2+Ar) gas flow ratio significantly affected
Autor:
Wan Jae Park, Chung-Gon Yoo, Hyoun Woo Kim, Chin-Wook Chung, Dae-Kyu Choi, Chang-Jin Kang, Nam Ho Kim, Ju Hyun Myung
Publikováno v:
Vacuum. 80:193-197
The characteristics of photoresist (PR) ashing using N 2 plasmas in a ferrite core inductively coupled plasma etcher have been studied and the effect of bias power and gas flow rate on PR ash rate and low- k material etch rate has been investigated.
Autor:
Chung Gon Yoo, Hyoun Woo Kim, Sang Don Choi, Kwang Hyuk Ko, Je Ho Woo, Chang Jin Kang, J. G. Lee, Nam Ho Kim, Han Sup Lee, Chin-Wook Chung, Dae Kyu Choi, Ju Hyun Myung, Se-Geun Park, Wan Jae Park
Publikováno v:
Thin Solid Films. :222-224
We have studied the characteristics of photoresist (PR) ashing using N 2 /O 2 plasmas in ferrite-core inductively coupled plasma etcher. By varying the O 2 /(O 2 + N 2 ) gas flow ratio, we have changed the PR ash rate and the low-k material etch rate
Autor:
Jaegab Lee, Wan Jae Park, Dae-Kyu Choi, Kee Won Suh, Ju Hyun Myung, Chang-Jin Kang, Chin-Wook Chung, Sung Kyeong Kim, Nam Ho Kim, Hyoun Woo Kim, Se-Geun Park, Chung-Gon Yoo
Publikováno v:
Journal of Materials Science. 40:3543-3544
Autor:
Hyoun Kim, Ju Myung, Nam Kim, Chung-Gon Yoo, Kee Suh, Sung Kim, Dae-Kyu Choi, Chin-Wook Chung, Chang-Jin Kang, Wan Park, Se-Geun Park, Jae-Gab Lee
Publikováno v:
Journal of Materials Science; Jul2005, Vol. 40 Issue 13, p3543-3544, 2p