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III-V MOSFET's with Advanced High k Dielectrics

Autor: Chunan Lin, M. L. Huang, Yu-Yang Chang, J. Raynien Kwo, C. P. Chen, Minghwei Hong

Publikováno v: ECS Transactions. 3:425-440

Ga2O3(Gd2O3), the novel oxide, which was electron-beam evaporated from a gallium- gadolinium-garnet target in UHV, has unpinned the GaAs Fermi level. Systematic heat treatments under various gases and temperatures were studied to achieve low leakage

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::33c54b8fa4c86346d2548a07d9d7ef86
https://doi.org/10.1149/1.2356302

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Achieving a Low Interfacial Density of States with a Flat Distribution in High-$\kappa$ Ga$_{2}$O$_{3}$(Gd$_{2}$O$_{3}$) Directly Deposited on Ge

Autor: Yaochung Chang, R. L. Chu, Tsung-Hung Chiang, Lungkun Chu, Tsung-Da Lin, Wei-E Wang, Hanchung Lin, Minghwei Hong, Chunan Lin, J. Raynien Kwo

Publikováno v: Applied Physics Express. 4:111101

The interfacial density of states (Dit) distribution of high-κ dielectric Ga2O3(Gd2O3) [GGO] directly deposited on n-type Ge(100) without invoking any interfacial passivation layer (IPL) was established using conductance measurements and charge pump

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cdaae3377fd9773bc69eefb2a921f122
https://doi.org/10.1143/apex.4.111101

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