Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Chun-min Zhang"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 85-94 (2018)
In this paper, a comprehensive charge-based predictive model of interface and oxide trapped charges in undoped symmetric long-channel double-gate MOSFETs is developed. The model involves essentially no fitting parameters, but first-principle calculat
Externí odkaz:
https://doaj.org/article/f3c6f475babb4e04afc9705926295e29
Publikováno v:
World Journal of Clinical Cases. 10:7147-7152
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1169cd5e83d5740d450c9ff07f2d7063
https://doi.org/10.12998/wjcc.v10.i20.7147
https://doi.org/10.12998/wjcc.v10.i20.7147
Autor:
Chun-Min Zhang
Publikováno v:
Natural Hazards. 103:3499-3522
The first Chinese Housing Earthquake Insurance (HEI) program was launched in Dali in 2015. Dali is an ethnic minority autonomous prefecture in southwest China, and is severely vulnerable to seismic hazards. This paper aims to understand household-lev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d2d13ad4237536dff3c176fa88164d6
https://doi.org/10.1007/s11069-020-04140-3
https://doi.org/10.1007/s11069-020-04140-3
Publikováno v:
Translational Cancer Research
Background Non-small cell lung cancer (NSCLC) accounts for more than 80% of the total lung cancer and gemcitabine (GEM)-based chemotherapy is the first-line therapeutic approach for NSCLC treatment. Owing to acquired chemo-resistance, the prognosis o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d75268163a9b4e99ee7a59b4122ead5c
https://doi.org/10.21037/tcr.2019.12.33
https://doi.org/10.21037/tcr.2019.12.33
Autor:
Christian Enz, Chun-Min Zhang, Giulio Borghello, Federico Faccio, Farzan Jazaeri, Andrea Baschirotto, Serena Mattiazzo
Publikováno v:
IEEE Transactions on Nuclear Science. 66:38-47
This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad(SiO2) on the drain leakage current of ${n}$ MOSFETs fabricated with a commercial 28-nm bulk CMOS process. Experimental comparisons among individual ${n}$ MOSFET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c723be753ec08317aa348ef092f09829
https://doi.org/10.1109/tns.2018.2878105
https://doi.org/10.1109/tns.2018.2878105
Autor:
Christian Enz, Giulio Borghello, Chun-Min Zhang, Andrea Baschirotto, Serena Mattiazzo, Farzan Jazaeri
This paper presents a generalized EKV charge-based MOSFET model that includes the effects of trapped charges in the oxide bulk and at the silicon/oxide interface. It is shown that in the presence of oxide- and interface-trapped charges, the mobile ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ebf99d1f85012fc51251d337972deaf
http://cds.cern.ch/record/2810013
http://cds.cern.ch/record/2810013
Autor:
Chun-Min Zhang, Zhen-Wei Qian
Publikováno v:
Disaster Prevention and Management: An International Journal. 27:556-572
Purpose The purpose of this paper is to investigate the relationship between potential affecting factors and the local communities’ willingness to pay (WTP) for housing earthquake insurance (HEI) in the context of ethnic minority communities. Desig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59e683510e969a6f758a46990a86a307
https://doi.org/10.1108/dpm-04-2018-0129
https://doi.org/10.1108/dpm-04-2018-0129
Publikováno v:
Fifth Symposium on Novel Optoelectronic Detection Technology and Application.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65fa2e1888a2bedc9d6ea4d97446c0a6
https://doi.org/10.1117/12.2522019
https://doi.org/10.1117/12.2522019
Autor:
Chun-Min Zhang, Giulio Borghello, Christian Enz, Andrea Baschirotto, Serena Mattiazzo, Farzan Jazaeri
Publikováno v:
2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC).
This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-lumino
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5eb83798a909b391b32516d09b963d68
https://doi.org/10.1109/nssmic.2018.8824379
https://doi.org/10.1109/nssmic.2018.8824379