Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Chun-Yung Chi"'
Autor:
Chun-Yung Chi, 紀淳詠
93
In this research, we perform the optical and material analyzes of five InGaN/GaN multiple quantum wells of different H2 process conditions in growing barriers. Also, ZnO thin film structures on GaN grown at different temperatures are studied.
In this research, we perform the optical and material analyzes of five InGaN/GaN multiple quantum wells of different H2 process conditions in growing barriers. Also, ZnO thin film structures on GaN grown at different temperatures are studied.
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/54189355295544569620
Autor:
P.D. Dapkus, Ke Sun, Chongwu Zhou, Yulian He, Tianshuo Zhao, Chun-Yung Chi, Xin Shen, Maoqing Yao, Nathan S. Lewis, Shu Hu
Publikováno v:
ACS Energy Letters. 6:193-200
Arrays of GaAs nanowires have been grown by selective-area metal–organic chemical-vapor deposition (MOCVD) onto photoactive planar Si substrates. This tandem, vertical-wire-array-on-planar absorber...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::138a9325bcaf1ff5b8a8e08c5d56da98
https://doi.org/10.1021/acsenergylett.0c02521
https://doi.org/10.1021/acsenergylett.0c02521
Autor:
Hanmin Zhao, Yoshitake Nakajima, P. Daniel Dapkus, Ting Wei Yeh, R. Stevenson, Dawei Ren, Sang Jun Choi, Mitchell Dreiske, Hyung Joon Chu, Chun-Yung Chi, Maoqing Yao, Yen-Ting Lin, Rijuan Li
Publikováno v:
Progress in Quantum Electronics. 75:100304
Selective area epitaxial (SAE) growth of III-V materials and devices by metalorganic chemical vapor deposition is selectively reviewed to illustrate the concepts employed in this technology and its most relevant applications. Special focus on the use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4cfe5784d2d5ddcbd3810575d013dcc
https://doi.org/10.1016/j.pquantelec.2020.100304
https://doi.org/10.1016/j.pquantelec.2020.100304
Autor:
Chunyang Sheng, Chun-Yung Chi, Sen Cong, Maoqing Yao, Aiichiro Nakano, Chongwu Zhou, Mingyuan Ge, P. Daniel Dapkus
Publikováno v:
ACS Nano. 10:2424-2435
Monolithic integration of III-V semiconductors with Si has been pursued for some time in the semiconductor industry. However, the mismatch of lattice constants and thermal expansion coefficients represents a large technological challenge for the hete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1fce6a665562175731cf07f097701e58
https://doi.org/10.1021/acsnano.5b07232
https://doi.org/10.1021/acsnano.5b07232
Autor:
Shermin Arab, Stephen B. Cronin, Chun-Yung Chi, P. Daniel Dapkus, P. Duke Anderson, Michelle L. Povinelli
Publikováno v:
ACS Photonics. 2:1124-1128
GaAs nanosheets with no twin defects, stacking faults, or dislocations are excellent candidates for optoelectrical applications. Their outstanding optical behavior and twin free structure make them superior to traditionally studied GaAs nanowires. Wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a97a2cd137988a355cf1bf0258ec865
https://doi.org/10.1021/acsphotonics.5b00179
https://doi.org/10.1021/acsphotonics.5b00179
Autor:
Chun-Chung Chen, Ningfeng Huang, Michelle L. Povinelli, Chia-Chi Chang, Stephen B. Cronin, Shermin Arab, P. Daniel Dapkus, Chun-Yung Chi, Jing Qiu
Publikováno v:
Nano Research. 7:163-170
We have recently demonstrated that GaAs nanosheets can be grown by metal-organic chemical vapor deposition (MOCVD). Here, we investigate these nanosheets by secondary electron scanning electron microscopy (SE-SEM) and electron beam induced current (E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::329d9433725d454c296564e6ced47ddf
https://doi.org/10.1007/s12274-013-0383-x
https://doi.org/10.1007/s12274-013-0383-x
Autor:
Wen-Yu Shiao, Chun-Yung Chi, Shu-Cheng Chin, Chi-Feng Huang, Tsung-Yi Tang, Yen-Cheng Lu, Yu-Li Lin, Lin Hong, Fang-Yi Jen, C. C. Yang, Bao-Ping Zhang, Segawa, Yusaburo
Publikováno v:
Journal of Applied Physics; 3/1/2006, Vol. 99 Issue 5, p054301, 6p, 6 Black and White Photographs, 5 Graphs
Publikováno v:
Nano Letters. 13:2506-2515
Highly perfect, twin-free GaAs nanosheets grown on (111)B surfaces by selective area growth (SAG) are demonstrated. In contrast to GaAs nanowires grown by (SAG) in which rotational twins and stacking faults are almost universally observed, twin forma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef1e8bbc5591d576bb3e18ef1e362530
https://doi.org/10.1021/nl400561j
https://doi.org/10.1021/nl400561j
Autor:
Chia-Chi Chang, Stephen B. Cronin, Chongwu Zhou, Michelle L. Povinelli, Ting-Wei Yeh, Chun-Yung Chi, Adam Bushmaker, Ningfeng Huang, Maoqing Yao, Stephen LaLumondiere, Jesse Theiss, P. Daniel Dapkus, Chun-Chung Chen
Publikováno v:
Nano Letters. 12:4484-4489
We report a systematic study of carrier dynamics in Al(x)Ga(1-x)As-passivated GaAs nanowires. With passivation, the minority carrier diffusion length (L(diff)) increases from 30 to 180 nm, as measured by electron beam induced current (EBIC) mapping,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27c0c1e55fa6c34f2b7003f5ed968236
https://doi.org/10.1021/nl301391h
https://doi.org/10.1021/nl301391h
Autor:
Chun-Yung Chi, Anuj R. Madaria, Ruijuan Li, Michelle L. Povinelli, P. Daniel Dapkus, Ningfeng Huang, Chongwu Zhou, Chenxi Lin, Maoqing Yao
Publikováno v:
Nano Letters. 12:2839-2845
Vertically aligned, catalyst-free semiconducting nanowires hold great potential for photovoltaic applications, in which achieving scalable synthesis and optimized optical absorption simultaneously is critical. Here, we report combining nanosphere lit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0e1e2332bd4330ac64044eaf681b8cf
https://doi.org/10.1021/nl300341v
https://doi.org/10.1021/nl300341v