Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Chun-Yuan Lu"'
Autor:
Chun-Yuan Lu, 盧俊源
96
High-k dielectric constant (high-k) material has been proposed to replace the conventional silicon dioxide as gate dielectrics of metal-oxide-semiconductor (MOS) devices in the near future. However, the characteristic and extent of charge tra
High-k dielectric constant (high-k) material has been proposed to replace the conventional silicon dioxide as gate dielectrics of metal-oxide-semiconductor (MOS) devices in the near future. However, the characteristic and extent of charge tra
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/27906669554788406685
Autor:
Chun-Yuan Lu, 陸駿元
94
Industrial ecology has been described as the “science of sustainability” and the field attempts to understand the potential for environmental improvement in industry using an analogy of industrial systems to natural ecological system. The
Industrial ecology has been described as the “science of sustainability” and the field attempts to understand the potential for environmental improvement in industry using an analogy of industrial systems to natural ecological system. The
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/9khgr6
Autor:
Chun-Yuan Lu, 盧俊源
94
The lack of forecasting systems is the main reason why most national defense units can not effectively project their budget plan. In this thesis, we are in an attempt to apply the multiple regression analysis method to improve the accuracy re
The lack of forecasting systems is the main reason why most national defense units can not effectively project their budget plan. In this thesis, we are in an attempt to apply the multiple regression analysis method to improve the accuracy re
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/25620498867407389080
Autor:
Tahui Wang, S. H. Ku, Wen-Jer Tsai, Chun-Yuan Lu, G. W. Wu, Kuang-Chao Chen, C. C. Cheng, Tao-Cheng Lu, You-Liang Chou, Wen Chang, Chih-Yuan Lu
Publikováno v:
IEEE Transactions on Electron Devices. 68:2260-2264
The threshold voltage ( ${V}$ th) distributions of ground-select-line (GSL) cells and edge dummy (DMY0) cells in a 3-D NAND flash memory are investigated. We characterize the ${V}$ th distributions in 3-D NAND flash samples with different fabrication
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ccd15d91ec04dea4d97690b3bf9b713
https://doi.org/10.1109/ted.2021.3063215
https://doi.org/10.1109/ted.2021.3063215
Autor:
Tahui Wang, S. H. Ku, Chun-Yuan Lu, H.P. Chiu, C. C. Cheng, Kunyuan Chen, T.W. Chen, Wei-Liang Lin, Wen-Jer Tsai, T.C. Lu, Chih-Yuan Lu
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
Feasibility of multi-times verify (MTV) scheme on triple-level cell (TLC) and quad-level cell (QLC) operations of charge-trap storage 3D NAND memories is investigated comprehensively. Results reveal that random telegraph noise (RTN) and program noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b30fd61277476ab4c0eb3c8eb36f083a
https://doi.org/10.1109/iedm.2018.8614548
https://doi.org/10.1109/iedm.2018.8614548
Autor:
Fu-Chung Hou, Chun-Yuan Lu, Yao-Tung Hsu, Shih-Cheng Chang, Chun-Chang Lu, Kuei-Shu Chang-Liao, Tien-Ko Wang
Publikováno v:
Microelectronics Reliability. 51:2110-2114
Although charge pumping (CP) is a powerful technique to measure the energy and spatial distributions of interface trap and oxide trap in MOS devices, the parasitic gate leakage current in it is the bottleneck. A CP method was modified and applied to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a49929da821f9c4fc55d1f4152603d8
https://doi.org/10.1016/j.microrel.2011.04.021
https://doi.org/10.1016/j.microrel.2011.04.021
Autor:
Tien Fan Ou, C. C. Cheng, Wen-Jer Tsai, Kuang-Chao Chen, C M Yih, T K Chu, Chun-Yuan Lu, Ping Hung Tsai, J.S. Huang, S G Yan, C.H. Cheng, Tao Cheng Lu, Chih-Yuan Lu, C S Hung
Publikováno v:
IEEE Transactions on Electron Devices. 58:945-952
A novel array architecture is proposed for floating-gate nor-type nonvolatile memory cells. By embedding a floating n+ region between two cells in each memory pair, punchthrough (PT) immunity is greatly improved. Since the operating cell and the casc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64385ed837cbffacd2ef4faee00e088d
https://doi.org/10.1109/ted.2011.2104960
https://doi.org/10.1109/ted.2011.2104960
Publikováno v:
Microelectronics Reliability. 49:371-376
A number of new device structures have been reported recently to improve the operation performance of flash memory. In this work, a novel flash device with a vertical dielectric layer in the depletion region is proposed through simulation approach. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dd4c163e00078b633991ddf8b085f6b
https://doi.org/10.1016/j.microrel.2008.12.004
https://doi.org/10.1016/j.microrel.2008.12.004
Publikováno v:
Microelectronic Engineering. 85:20-26
Charge-pumping (CP) techniques with various rise and fall times and with various voltage swings are used to investigate the energy distribution of interface-trap density and the bulk traps. The charge pumped per cycle (Q"c"p) as a function of frequen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bcd5f59bde760eaf311d266942a8f9c
https://doi.org/10.1016/j.mee.2007.02.012
https://doi.org/10.1016/j.mee.2007.02.012