Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Chun-Yuan Ku"'
Autor:
Hung-Chang Sun, Yuan-Jun Hsu, Ching-Chieh Shih, Yen-Ting Chen, Jim-Shone Chen, Ying-Jhe Yang, Chee-Wee Liu, Chun-Yuan Ku, Ching-Fang Huang
Publikováno v:
IEEE Electron Device Letters. 30:368-370
The dynamic stress switching of p-channel polycrystalline-silicon (poly-Si) thin-film transistors from full depletion to accumulation bias creates the high electric field near source/drain (S/D) junctions due to the slow formation of the accumulated
Autor:
Yuan-Jun Hsu, Ting-Yun Wu, Chee-Wee Liu, Chun-Yuan Ku, Chia-Hong Huang, J.-S. Chen, Yit-Tsong Chen, Hung-Chang Sun
Publikováno v:
2009 International Semiconductor Device Research Symposium.
One-transistor (1T) memory cells with long data retention time is achieved with the modulation of drain current by channel traps. For simple demonstration, poly-Si TFTs are used, and grain boundary traps induced by excimer laser annealing are used as
Publikováno v:
Biomedicines, Vol 10, Iss 1, p 21 (2021)
MicroRNAs (miRNAs) could be potential biomarkers for glioblastoma multiforme (GBM) prognosis and response to therapeutic agents. We previously demonstrated that the cancer stem cell marker Musashi-1 (MSI1) is an RNA binding protein that promotes radi
Externí odkaz:
https://doaj.org/article/a217ff0a6d65476cbbef4bc54c802fec
Autor:
Ching-Fang Huang, Hung-Chang Sun, Ying-Jhe Yang, Yen-Ting Chen, Chun-Yuan Ku, Chee Wee Liu, Yuan-Jun Hsu, Ching-Chieh Shih, Jim-Shone Chen
Publikováno v:
IEEE Electron Device Letters; Apr2009, Vol. 30 Issue 4, p368-370, 3p