Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Chun-Yuan Ku"'
Autor:
Hung-Chang Sun, Yuan-Jun Hsu, Ching-Chieh Shih, Yen-Ting Chen, Jim-Shone Chen, Ying-Jhe Yang, Chee-Wee Liu, Chun-Yuan Ku, Ching-Fang Huang
Publikováno v:
IEEE Electron Device Letters. 30:368-370
The dynamic stress switching of p-channel polycrystalline-silicon (poly-Si) thin-film transistors from full depletion to accumulation bias creates the high electric field near source/drain (S/D) junctions due to the slow formation of the accumulated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::108e9f1106329c431fe8fd98e1697014
https://doi.org/10.1109/led.2009.2013644
https://doi.org/10.1109/led.2009.2013644
Autor:
Chun-Yuan Ku, 古鈞元
101
This study developed a parking lot management system to identify the vacant parking spots and immediately see images of the vehicles currently in that area. In the proposed system, a driver receives two cards upon entering the parking lot: o
This study developed a parking lot management system to identify the vacant parking spots and immediately see images of the vehicles currently in that area. In the proposed system, a driver receives two cards upon entering the parking lot: o
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/40833312311090557703
Autor:
Chun-Yuan Ku, 古峻源
98
In this thesis, to study hetero structure solar cell, we use TCAD to simulate characteristics of solar cell, try to improve the structure and get better efficiency. Open-circuit voltage of traditional wafer cell can be improved by thin film a
In this thesis, to study hetero structure solar cell, we use TCAD to simulate characteristics of solar cell, try to improve the structure and get better efficiency. Open-circuit voltage of traditional wafer cell can be improved by thin film a
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/01875466944013995849
Autor:
Yuan-Jun Hsu, Ting-Yun Wu, Chee-Wee Liu, Chun-Yuan Ku, Chia-Hong Huang, J.-S. Chen, Yit-Tsong Chen, Hung-Chang Sun
Publikováno v:
2009 International Semiconductor Device Research Symposium.
One-transistor (1T) memory cells with long data retention time is achieved with the modulation of drain current by channel traps. For simple demonstration, poly-Si TFTs are used, and grain boundary traps induced by excimer laser annealing are used as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a23ea69c2fb7f0dbec05de7064056915
https://doi.org/10.1109/isdrs.2009.5378020
https://doi.org/10.1109/isdrs.2009.5378020
Autor:
Ching-Fang Huang, Hung-Chang Sun, Ying-Jhe Yang, Yen-Ting Chen, Chun-Yuan Ku, Chee Wee Liu, Yuan-Jun Hsu, Ching-Chieh Shih, Jim-Shone Chen
Publikováno v:
IEEE Electron Device Letters; Apr2009, Vol. 30 Issue 4, p368-370, 3p