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pro vyhledávání: '"Chun-Yi Guo"'
Publikováno v:
Analog Integrated Circuits and Signal Processing. 96:9-19
A dynamic frequency divider using a negative-differential-resistance (NDR) circuit combined with an inductor and a capacitor was demonstrated. This NDR circuit was made of Si-based metal-oxide-semiconductor field-effect transistor (MOS) and SiGe-base
Publikováno v:
Analog Integrated Circuits and Signal Processing. 96:409-416
We demonstrate a multi-threshold threshold gate (MTTG) based on a series and parallel connection of several MOS-NDR circuits. A MOS-NDR circuit is made of five standard Si-based metal–oxide–semiconductor field-effect-transistor (MOS) devices. It
Publikováno v:
Advanced Materials Research. :1006-1012
Compared with Line-Commutated-Converter High Voltage Direct Current (LCC-HVDC), the primary and secondary systems of modular multilevel converter based HVDC (MMC-HVDC) are more complicated. And control and protection function of sub-module controller