Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Chun-Suk Suh"'
Autor:
Won-Chan Lee, Seong-Woon Choi, Young-Hee Kim, Young-Chang Kim, Chun-Suk Suh, Seung-Hune Yang, Seongbo Shim, Moon-Gyu Jeong, Sung-Hoon Jang
Publikováno v:
SPIE Proceedings.
Generally speaking, the models used in the optical proximity effect correction (OPC) can be divided into three parts, mask part, optic part, and resist part. For the excellent quality of the OPC model, each part has to be described by the first princ
Autor:
Lena Zavyalova, Sung-Woo Lee, Yongfa Fan, Kyoil Koo, Sooryong Lee, Thomas Schmoeller, Chun-Suk Suh, Jason Huang, Irene Su, Moon-Gyu Jeongb, Junghoon Ser, Brad Falch
Publikováno v:
SPIE Proceedings.
As semiconductor manufacturing moves to 32nm and 22nm technology nodes with 193nm water immersion lithography, the demand for more accurate OPC modeling is unprecedented to accommodate the diminishing process margin. Among all the challenges, modelin
Autor:
Tae-Hoon Park, Chan-Hoon Park, Joo-Tae Moon, Seong-Woon Choi, Eun-Mi Lee, Junghoon Ser, Sung-Woo Lee, Chun-Suk Suh, Moon-Gyu Jeong
Publikováno v:
SPIE Proceedings.
OPC models with and without thick mask effect (3D-mask effect) are compared in their prediction capabilities of actual 2D patterns. We give some examples in which thin-mask models fail to compensate the 3D-mask effect. The models without 3D-mask effe
Autor:
Hyoung-Kook Kim, Yong-Sun Koh, Chang-Lyong Song, Dae-Joung Kim, Young-Seok Kim, Chun-Suk Suh, Seok-Hwan Oh
Publikováno v:
SPIE Proceedings.
As the design rule of device has shrunken, obtaining a feasible process window at low k1 factor in photolithography is the major concerning in order to shorten the total period from development to the mass production of devices. In this low k1 factor