Zobrazeno 1 - 3
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pro vyhledávání: '"Chun-Ming FanChiang"'
Autor:
Chun-Ming FanChiang, 范姜群名
104
Three-dimensional topological insulator Bi2Se3 has natural Se vacancy and causes high intrinsic n-type carrier concentration. In order to research the surface state, we doped Sb into Bi2Se3 to tune down the carrier concentration. We successf
Three-dimensional topological insulator Bi2Se3 has natural Se vacancy and causes high intrinsic n-type carrier concentration. In order to research the surface state, we doped Sb into Bi2Se3 to tune down the carrier concentration. We successf
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/13088475007649648499
Autor:
Jung-Chun Andrew Huang, Yi Chang Li, Hsieh Cheng Han, Huaili Qiu, Zhongjun Li, Chuan-Pu Liu, Cheong Wei Chong, Yu Hung Liu, Chun Ming FanChiang
Publikováno v:
ACS Applied Materials & Interfaces. 9:12859-12864
Ultrathin three-dimensional topological insulator films are promising for use in field effect devices. (Bi1–xSbx)2Se3 ultrathin films were fabricated on SrTiO3 substrate, where large resistance changes of ∼25 000% could be achieved using the back
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f57084193aff4d91237482fbfe58f97
https://doi.org/10.1021/acsami.7b00541
https://doi.org/10.1021/acsami.7b00541
Autor:
Yu-Hung, Liu, Cheong-Wei, Chong, Chun-Ming, FanChiang, Jung-Chun-Andrew, Huang, Hsieh-Cheng, Han, Zhongjun, Li, Huaili, Qiu, Yi-Chang, Li, Chuan-Pu, Liu
Publikováno v:
ACS applied materialsinterfaces. 9(14)
Ultrathin three-dimensional topological insulator films are promising for use in field effect devices. (Bi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::90e9d300e9657fee99a4049384ac760c
https://pubmed.ncbi.nlm.nih.gov/28318226
https://pubmed.ncbi.nlm.nih.gov/28318226