Zobrazeno 1 - 10
of 265
pro vyhledávání: '"Chun-Lin Jia"'
Autor:
Rui Lu, Jian Wang, Tingzhi Duan, Tian-Yi Hu, Guangliang Hu, Yupeng Liu, Weijie Fu, Qiuyang Han, Yiqin Lu, Lu Lu, Shao-Dong Cheng, Yanzhu Dai, Dengwei Hu, Zhonghui Shen, Chun-Lin Jia, Chunrui Ma, Ming Liu
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)
Abstract Dielectric capacitors are highly desired for electronic systems owing to their high-power density and ultrafast charge/discharge capability. However, the current dielectric capacitors suffer severely from the thermal instabilities, with shar
Externí odkaz:
https://doaj.org/article/97765348684a405a819d2160b1eb50aa
Autor:
Xian-Kui Wei, Sergei Prokhorenko, Bi-Xia Wang, Zenghui Liu, Yu-Juan Xie, Yousra Nahas, Chun-Lin Jia, Rafal E. Dunin-Borkowski, Joachim Mayer, Laurent Bellaiche, Zuo-Guang Ye
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
Phase transition brings a plethora of exotic phenomena and intriguing effects such as spin and charge frustration. However, the phase transition order is not always explicit. Here, the authors discover phase transition frustration near a tricritical
Externí odkaz:
https://doaj.org/article/093b3e57e8914829a3e1a290ddca7715
Autor:
Lvkang Shen, Ming Liu, Lu Lu, Chunrui Ma, Changjun Jiang, Caiyin You, Jiaheng Zhang, Weiwei Zhao, Li Geng, Chun‐Lin Jia
Publikováno v:
Advanced Materials Interfaces, Vol 9, Iss 10, Pp n/a-n/a (2022)
Abstract Flexible materials and devices that can simultaneously reflect multimodal information are highly desired for novel flexible electronics and intelligent flexible sensing systems. In this regard, flexible magnetic films have great potential fo
Externí odkaz:
https://doaj.org/article/102b476977f44cd78e56e16080a475b5
Autor:
Guangliang Hu, Yinchang Shen, Qiaolan Fan, Wanli Zhao, Tongyu Liu, Chunrui Ma, Chun-Lin Jia, Ming Liu
Publikováno v:
Materials, Vol 16, Iss 2, p 712 (2023)
The leakage behavior of ferroelectric film has an important effect on energy storage characteristics. Understanding and controlling the leakage mechanism of ferroelectric film at different temperatures can effectively improve its wide-temperature sto
Externí odkaz:
https://doaj.org/article/ceffdfb279204da880301fae2fbc6862
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
Abstract Pavlovian conditioning, a classical case of associative learning in a biological brain, is demonstrated using the Ni/Nb-SrTiO3/Ti memristive device with intrinsic forgetting properties in the framework of the asymmetric spike-timing-dependen
Externí odkaz:
https://doaj.org/article/3c5cca9769d146a880de60bd27638973
Publikováno v:
APL Materials, Vol 7, Iss 10, Pp 101127-101127-6 (2019)
We here present a method to engineer Ruddlesden-Popper-type antiphase boundaries in stoichiometric homoepitaxial SrTiO3 thin films. This is achieved by using a substrate with an intentionally high miscut, which stabilizes the growth of additional SrO
Externí odkaz:
https://doaj.org/article/beae3b1ed765482aa7c4b82b2db055ba
Autor:
Ting-Ting Jiang, Jiang-Jing Wang, Lu Lu, Chuan-Sheng Ma, Dan-Li Zhang, Feng Rao, Chun-Lin Jia, Wei Zhang
Publikováno v:
APL Materials, Vol 7, Iss 8, Pp 081121-081121-5 (2019)
Fast and reversible phase transitions in chalcogenide phase-change materials (PCMs), in particular, Ge-Sb-Te compounds, are not only of fundamental interests but also make PCMs based random access memory a leading candidate for nonvolatile memory and
Externí odkaz:
https://doaj.org/article/a7db60d9e10b4da1983f13032b720c14
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
Flexible rotation of spontaneous polarization at ferroelectric domain walls is predicted in theory but lacks evidence from experiment. Here, Wei et al. image a Néel-like domain wall in Ti-rich ferroelectric Pb(Zr1−xTix)O3crystals, providing insigh
Externí odkaz:
https://doaj.org/article/a2c4b5f57f634a99b022f31151b7b22e
Autor:
Rui Lu, Zhonghui Shen, Chunrui Ma, Tingzhi Duan, Lu Lu, Guangliang Hu, Tian-Yi Hu, Caiyin You, Shaobo Mi, Chun-Lin Jia, Long-Qing Chen, Ming Liu
Publikováno v:
Journal of Materials Chemistry A. 10:17166-17173
Ultra-high temperature performances are achieved by introducing and engineering homogeneous/heterogeneous interfaces within the capacitors. The ultra-wide working temperature range from −100 to 400 °C is suitable for extreme environments.
Publikováno v:
Journal of the American Ceramic Society 106(2), 1597-1605 (2023). doi:10.1111/jace.18858
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b729f8fb7d8f63600a2065f9140d6931
https://hdl.handle.net/2128/34086
https://hdl.handle.net/2128/34086