Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Chun-Hsiung Lin"'
Publikováno v:
Micromachines, Vol 14, Iss 10, p 1937 (2023)
Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation velocity for high-power devices. These attributes position GaN as a pivotal materi
Externí odkaz:
https://doaj.org/article/9d1081388fd741dc9304516866f20cf6
Publikováno v:
Materials, Vol 16, Iss 9, p 3376 (2023)
A high-pressure (HP) GaN nucleation layer (NL) was inserted between AlGaN buffer and an unintentionally doped (UID) GaN layer of an AlGaN/GaN HEMT on Si. The XRD and TEM showed that when the V/III ratio was optimized during the HP-GaN NL growth, the
Externí odkaz:
https://doaj.org/article/d7aa34633dfc40909084e32350c4a1a2
Autor:
Kuo-Bin Hong, Chun-Yen Peng, Wei-Cheng Lin, Kuan-Lun Chen, Shih-Chen Chen, Hao-Chung Kuo, Edward Yi Chang, Chun-Hsiung Lin
Publikováno v:
Micromachines, Vol 14, Iss 3, p 519 (2023)
In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for high power GaN HEMT developed for power electronics applications, such as power converters or photonic driver applications, with large gate periphery and ch
Externí odkaz:
https://doaj.org/article/52e08d84dc234dd1a533b62567b6603d
Autor:
Yuan Lin, Min-Lu Kao, You-Chen Weng, Chang-Fu Dee, Shih-Chen Chen, Hao-Chung Kuo, Chun-Hsiung Lin, Edward-Yi Chang
Publikováno v:
Micromachines, Vol 13, Iss 12, p 2140 (2022)
Substrate voltage (VSUB) effects on GaN-on-Si high electron mobility transistors (HEMTs) power application performance with superlattice transition layer structure was investigated. The 2DEG conductivity and buffer stack charge redistribution can be
Externí odkaz:
https://doaj.org/article/1e70b521f9bc477593c31e7b54c0d9b9
Autor:
Yu-Heng Hong, Ching-Yao Liu, Jun-Da Chen, Chun-Yen Peng, Li-Chuan Tang, Tien-Chang Lu, Chun-Hsiung Lin, Wei-Hua Chieng, Edward Yi Chang, Shih-Chen Chen, Hao-Chung Kuo
Publikováno v:
Crystals, Vol 12, Iss 9, p 1242 (2022)
In this study, a paradigm for modulating the light emission performance of photonic-crystal surface-emitting laser (PCSEL) via GaN high electron mobility transistor (HEMT) driving circuit is proposed for the first time. For light detection and rangin
Externí odkaz:
https://doaj.org/article/7a1cf4466ade4811a538abda0e32c623
Publikováno v:
Case Studies in Thermal Engineering, Vol 21, Iss , Pp 100714- (2020)
Split-type air conditioners (SACs) are widely used in households and offices. To aid the design of a SAC, this study develops a theoretical thermohydraulic and condensing phase-change model for the two-dimensional indoor unit of a small-sized SAC. It
Externí odkaz:
https://doaj.org/article/09bcaa9abc524935819942a1b3167311
Autor:
Lung-Hsing Hsu, Yung-Yu Lai, Po-Tsung Tu, Catherine Langpoklakpam, Ya-Ting Chang, Yu-Wen Huang, Wen-Chung Lee, An-Jye Tzou, Yuh-Jen Cheng, Chun-Hsiung Lin, Hao-Chung Kuo, Edward Yi Chang
Publikováno v:
Micromachines, Vol 12, Iss 10, p 1159 (2021)
GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from the high-frequency power amplifier to the high voltage devices used in power electronic systems. Development of GaN HEMT on Si-based substrate is currently
Externí odkaz:
https://doaj.org/article/6224875880844fb29c583e51058b6860
Autor:
An-Chen Liu, Po-Tsung Tu, Catherine Langpoklakpam, Yu-Wen Huang, Ya-Ting Chang, An-Jye Tzou, Lung-Hsing Hsu, Chun-Hsiung Lin, Hao-Chung Kuo, Edward Yi Chang
Publikováno v:
Micromachines, Vol 12, Iss 7, p 737 (2021)
GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized prod
Externí odkaz:
https://doaj.org/article/bef6ba89d4b74debbedb6beaf5adf724
Autor:
Chinsu Lin, Chun-Hsiung Lin
Publikováno v:
Scientia Agricola, Vol 70, Iss 2, Pp 93-101 (2013)
In the last few decades, many forests have been cut down to make room for cultivation and to increase food or energy crops production in developing countries. In this study, carbon sequestration and wood production were evaluated on afforested farms
Externí odkaz:
https://doaj.org/article/0e0804e2f5d34107a2e4c479c5c50a2a
Autor:
Peter J.S. Chiu, Karen F. Marcoe, Sidney E. Bounds, Chun-Hsiung Lin, Jin-Jye Feng, Atsui Lin, Fong-Chi Cheng, William J. Crumb, Richard Mitchell
Publikováno v:
Journal of Pharmacological Sciences, Vol 95, Iss 3, Pp 311-319 (2004)
A radioligand binding assay for the HERG (human ether-a-go-go-related gene) K+ channel was developed to identify compounds which may have inhibitory activity and potential cardiotoxicity. Pharmacological characterization of the [3H]astemizole binding
Externí odkaz:
https://doaj.org/article/2745ba76bae843668cfe626877d423ba