Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Chun-Chang Lu"'
Autor:
Chun-Chang Lu, 盧俊昌
98
It’s hard to control the bone preparation accuracy by the traditional TKR method. Thus the success of the surgery is very strongly dependent upon the experience of the surgeon. In order to reduce operative time, improve surgical accuracy, r
It’s hard to control the bone preparation accuracy by the traditional TKR method. Thus the success of the surgery is very strongly dependent upon the experience of the surgeon. In order to reduce operative time, improve surgical accuracy, r
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/w9s5x3
Detection of stress-induced Interface Traps and Border Traps in MOSFETs with High-K Gate Dielectrics
Autor:
Chun-Chang Lu, 呂君章
95
To fulfill the scaling scenario as projected in the International Technology Roadmap for Semiconductors (ITRS), it is widely believed that a high-k (high permittivity) dielectric is needed to replace SiO2 as the CMOS gate dielectric to reduce
To fulfill the scaling scenario as projected in the International Technology Roadmap for Semiconductors (ITRS), it is widely believed that a high-k (high permittivity) dielectric is needed to replace SiO2 as the CMOS gate dielectric to reduce
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/35641987665485802149
Autor:
Chun-Chang Lu, 呂俊璋
104
In the recent years, the natural human-computer interface is blooming. People could control the machine by the hand gesture with friendly interface. The depth camera has been widely used in motion sensing game and image detection. The differ
In the recent years, the natural human-computer interface is blooming. People could control the machine by the hand gesture with friendly interface. The depth camera has been widely used in motion sensing game and image detection. The differ
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/9394yw
Autor:
Shyi-Yuan Wu, Y. H. Ho, Hsu Kai-Chieh, Yu-Hsuan Lin, Tseung-Yuen Tseng, Chih-Chung Yang, Dai-Ying Lee, Hsiang-Lan Lung, Kuang-Hao Chiang, C. Y. Lei, Ming-Hsiu Lee, Yan-Xiao Lin, Feng-Ming Lee, Keh-Chung Wang, Chen-Chien Li, Chin-Yu Chen, Kuen-Yi Chen, Chun-Chang Lu, Cha-Hsin Lin
Publikováno v:
IEEE Electron Device Letters. 38:1224-1227
This letter addresses two difficult challenges for transition metal oxide resistive random access memories (ReRAMs)—sensitivity to operation temperature and random fluctuation of resistance value. A careful study of a WO x ReRAM array reveals that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc0500c1ef10fbece49beb1ef413e018
https://doi.org/10.1109/led.2017.2732025
https://doi.org/10.1109/led.2017.2732025
Autor:
Keh-Chung Wang, Feng-Ming Lee, Yu-Yu Lin, G.Y. Chen, Chun-Chang Lu, Po-Hao Tseng, K.Y. Hsieh, Meng-Chyi Wu, H.L. Lung, Dai-Ying Lee, Ming-Hsiu Lee, K.C. Hsu
Publikováno v:
2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
The forming voltage and temperature for creating the first filament in the RRAM device are found having impacts on RRAM reliability. The correlation between the forming temperature and the required voltage was evaluated on the WOx/TiOx RRAM devices,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c42ca870061dcab74ec90149213f83f0
https://doi.org/10.1109/vlsi-tsa.2019.8804662
https://doi.org/10.1109/vlsi-tsa.2019.8804662
Autor:
Kuei-Shu Chang-Liao, Li-Jung Liu, Chen-Chien Li, Tzu-Hsiang Su, Wei-Fong Chi, Chia-Chi Tsai, Mong-Chi Li, Yu-Wei Chang, Chung-Hao Fu, Chun-Chang Lu, Ting-Chun Chen
Publikováno v:
IEEE Electron Device Letters. 37:12-15
Electrical characteristics of Ge pMOSFETs with HfO2, ZrO2, ZrO2/HfO2, and HfZrO x gate dielectrics are studied in this letter. A lower equivalent oxide thickness (EOT) is obtained in ZrO2 device, which, however, has a higher interface trap density (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ab222e9673c689c951f744f8e4709ee
https://doi.org/10.1109/led.2015.2497348
https://doi.org/10.1109/led.2015.2497348
Publikováno v:
IEEE Transactions on Electron Devices. 62:1405-1410
A stress-and-sense charge pumping (SSCP) technique is proposed in this paper to measure the stress-induced interface trap ( $\Delta N_{{\rm {it}}})$ in real-time evolution without stress interruption. Results show that the $\Delta N_{{\rm {it}}}$ mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3ab617756ac4412879850ce4caecb79
https://doi.org/10.1109/ted.2015.2409477
https://doi.org/10.1109/ted.2015.2409477
Autor:
Chun-Chang Lu, Tsung-Lin Hsieh, Yan-Lin Li, Li-Ting Chen, Chung-Hao Fu, Dun-Bao Ruan, Yu-Liang Liao, Chen-Chien Li, Kuei-Shu Chang-Liao
Publikováno v:
Microelectronic Engineering. 138:81-85
Display Omitted A post-growth treatment is performed on interfacial layer before high-k deposition.The treatment includes an IL desorption and a re-growth process.Both effective oxide thickness and simultaneously leakage current are decreased.The imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10a52ba0bbf13ac0e0132f745147ea14
https://doi.org/10.1016/j.mee.2015.02.028
https://doi.org/10.1016/j.mee.2015.02.028
Autor:
Mong-Chi Li, Tien-Ko Wang, Chen-Chien Li, Zong-Hao Ye, Li-Ting Chen, Hao-Zhi Hong, Chun-Chang Lu, Chung-Hao Fu, Kuei-Shu Chang-Liao, Wei-Fong Chi
Publikováno v:
Solid-State Electronics. 101:33-37
High-k gated metal–oxide–semiconductor field-effect-transistors (MOSFETs) with Cl 2 and CF 4 plasma treatments are studied in this work. A higher-k HfON with more tetragonal phase is formed by the halogen plasma treatment on interfacial layer (IL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da2430ba967f8f8aa10caa1963a674c3
https://doi.org/10.1016/j.sse.2014.06.028
https://doi.org/10.1016/j.sse.2014.06.028
Autor:
Chun-Chang Lu, Jen-Wei Cheng, Chen-Chien Li, Li-Jung Liu, Chung-Hao Fu, Kuei-Shu Chang-Liao, Ting-Ching Chen
Publikováno v:
IEEE Transactions on Electron Devices. 61:2662-2667
A Ge MOS device with an ultralow equivalent oxide thickness of ~0.5 nm and acceptable leakage current of 0.5 A/cm 2 is presented in this paper. The superior characteristics can be attributed to a tetragonal HfO 2 with a higher k value (k ~ 31) and co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4616343bd942b790e01e8f29ef8a263
https://doi.org/10.1109/ted.2014.2329839
https://doi.org/10.1109/ted.2014.2329839