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pro vyhledávání: '"Chun ting Pan"'
Autor:
Chun-Ting Pan, 潘俊廷
105
Aluminum alloy 2024-T3 has widely been utilized in the aircraft industry because of the high mechanism strength and low-weight. Adding alloy elements into aluminum substrate improve the mechanism strength but reduce the corrosion resistance.
Aluminum alloy 2024-T3 has widely been utilized in the aircraft industry because of the high mechanism strength and low-weight. Adding alloy elements into aluminum substrate improve the mechanism strength but reduce the corrosion resistance.
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/596vf6
Publikováno v:
Electrochemical and Solid-State Letters. 14:H281-H284
In this paper, a patterned sacrificial layer structure comprised of 3 μm-wide SiO2 narrow strips and 3 μm spacing between strips fabricated on sapphire substrate was proposed. The structure was used not only to improve GaN epilayer quality, but als
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eac2cc98f57ef90bc8c7b0f31320143d
https://doi.org/10.1149/1.3582352
https://doi.org/10.1149/1.3582352
Publikováno v:
Solid-State Electronics. 53:574-577
In this study, we compare our InAlAs–InP/GaAsSb DHBT with other published GaAsSb-based DHBTs in the dc characteristics by examining the Gummel plot and simulation analysis. The InAlAs–InP and InP–InAlAs composite emitters can effectively reduce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::079a583fdfc0f7b39dcb75592bbd16c2
https://doi.org/10.1016/j.sse.2009.03.013
https://doi.org/10.1016/j.sse.2009.03.013
Publikováno v:
Solid-State Electronics. 52:946-951
A new emitter finger layout in SiGe HBT to reduce thermal-coupling is presented in this study. By redistributing the emitter fingers of various SiGe HBTs, the thermal resistance reduces significantly from 133 to 88 K/W under room temperature. Thus, i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62d1f8cd15223e0423b6833030fb88f5
https://doi.org/10.1016/j.sse.2007.12.009
https://doi.org/10.1016/j.sse.2007.12.009
Publikováno v:
ECS Transactions. 45:35-37
III-nitride semiconductors have become attractive materials for the fabrication of optoelectronic and electronic devices. In particular, high-brightness GaNbased light-emitting diodes (LEDs) have become popular for a number of applications. However,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f16845bf4604b668f2e1be25a0c3203d
https://doi.org/10.1149/1.3701523
https://doi.org/10.1149/1.3701523
Publikováno v:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV.
Chemical lift-off (CLO) technique has been paid more attention since no damages will be induced to GaN epi-layer during the epilayer lift-off process. In this study two novel CLO approaches were used to separate GaN epilayer from sapphire substrate.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddc05a99c8b668c8fe3db45299ada011
https://doi.org/10.1117/12.872570
https://doi.org/10.1117/12.872570
Autor:
Chun-ting Pan, 潘俊廷
97
In the recent years, the GaN-based electronic devices have attracted attention for high power microwave application, such as AlGaN/GaN high electron mobility transistors (HEMT). However, it is difficult to fabricate working GaN-based HBTs due
In the recent years, the GaN-based electronic devices have attracted attention for high power microwave application, such as AlGaN/GaN high electron mobility transistors (HEMT). However, it is difficult to fabricate working GaN-based HBTs due
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/67844478084202531352
Autor:
Chun-Ting Pan, 潘俊廷
90
Power metal-oxide-semiconductor field-effect transistors (MOSFETs) have been widely applied to power electronics owing to great semiconductor industry. Power MOSFETs have vertical-channel and lateral-channel structures. In this thesis, we stu
Power metal-oxide-semiconductor field-effect transistors (MOSFETs) have been widely applied to power electronics owing to great semiconductor industry. Power MOSFETs have vertical-channel and lateral-channel structures. In this thesis, we stu
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/t28g7r
Publikováno v:
ECS Meeting Abstracts. :911-911
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8f3d90321c55f45c5692e55528157d8
https://doi.org/10.1149/ma2012-01/22/911
https://doi.org/10.1149/ma2012-01/22/911
Publikováno v:
Journal of The Electrochemical Society. 157:H381
This work presents dc characteristics (gain and leakage current) of a GaN/InGaN/ZnO npn collector-up heterojunction bipolar transistor (HBT) measured at 300, 200, and 100 K. The GaN-based epilayers of HBT were grown by metallorganic chemical vapor de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e537e67b4935b75303bea3b74355d37
https://doi.org/10.1149/1.3294765
https://doi.org/10.1149/1.3294765