Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Chun Yi Chai"'
Autor:
Chun-Yi Chai, Chen-Pang Chao, Ike Lin, Bryan Chiyuan Chu, Tianmeng Cui, Wen-Hsiung Lin, Hsin-Wei Wang, Teng-Yu Lo, Chang-Fa Yang
Publikováno v:
2021 International Symposium on Antennas and Propagation (ISAP).
Autor:
Chen-Pang Chao, Chiu-Ming Tung, Chang-Fa Yang, Ike Lin, Chun-Yi Chai, Shang-Hung Yang, Wen-Hsiung Lin
Publikováno v:
2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting.
A series-fed cavity-back patch array antenna for a miniaturized 77GHz radar module is presented in this paper. Inherently, the microstrip patch antenna has a wider bandwidth with a thicker substrate. However, a ground coplanar waveguide (GCPW) to fee
Autor:
Chun-Yen Chang, Huang-Chung Cheng, Yi-Jen Chan, Yong-Lin Lai, Jung-A Huang, Janne Wha Wu, Chun-Yi Chai
Publikováno v:
Journal of Electronic Materials. 25:1818-1822
The influences of the As-outdiffusion and Au-indiffusion on the performances of the Au/Ge/Pd/n-GaAs ohmic metallization systems are clarified by investigating three different types of barrier metal structures Au/Ge/Pd/GaAs, Au/Ti/Ge/Pd/ GaAs, and Au/
Autor:
Chun-Yi Chai, 翟純宜
95
Most mergers and acquisitions (M&A) are focus on the activities of Law, Finance, and Business. But many of top management who experienced M&A had admitted that human resources management is a critical point to success at M&A. As the developme
Most mergers and acquisitions (M&A) are focus on the activities of Law, Finance, and Business. But many of top management who experienced M&A had admitted that human resources management is a critical point to success at M&A. As the developme
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/wcx5cg
Autor:
Yeong-Lin Lai, Jung A. Huang, Chun Yi Chai, Yi-Jen Chan, Huang-Chung Cheng, Chun-Yen Chang, Janne Wha Wu
Publikováno v:
Japanese Journal of Applied Physics. 35:2110
Au/Ge/Pd metallization system using Mo/Ti as the diffusion barrier between the Au overlayer and the Ge/Pd underlayer has been performed for the first time to achieve excellent ohmic contacts to n+-GaAs with the Si-doping concentration of about 2×101
Autor:
Shih–Hsiung Chan, Chun Yi Chai, Jan–Dar Guo, Chun-Yen Chang, Yi-Jen Chan, Janne Wha Wu, Huang-Chung Cheng, Jung A. Huang, Yong Lin Lai
Publikováno v:
Japanese Journal of Applied Physics. 35:2073
High-performance Au/Ti/Ge/Pd ohmic contacts on n+-In0.5Ga0.5P have been fabricated for the first time. Using an n+-In0.5Ga0.5P epitaxial layer grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with a Si dopant concentration of a