Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Chun Mao Chiou"'
Autor:
Yi-Chuen Eng, Luke Hu, Tzu-Feng Chang, Steven Hsu, Chun Mao Chiou, Ted Wang, Chih-Wei Yang, Osbert Cheng, Chih-Yi Wang, C. S. Tseng, Ren Huang, Po-Hsieh Lin, Kuan-Yu Lu, I-Fan Chang, Chi-Ju Lee, Yen-Liang Wu, Mike Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 207-213 (2018)
This paper aims to investigate the recently proposed figure of merit, ΔVDIBLSS/(Ion/Ioff), in detail. Experimental results show that ΔVDIBLSS/(Ion/Ioff) represents the index of device immunity to short-channel effects in bulk FinFETs. The value of
Externí odkaz:
https://doaj.org/article/828ad9d5138e4529a144a668d7ba1fcf
Autor:
Yi-Chuen Eng, Luke Hu, Tzu-Feng Chang, Steven Hsu, Chun Mao Chiou, Ted Wang, Chih-Wei Yang, Chien-Ting Lin, I-Chang Wang, Ming-Chih Chen, Andy Lai, Pei-Wen Wang, Chia-Jung Hsu, Wen-Yuan Pang, Chin-Hao Kuo, Osbert Cheng, Chih-Yi Wang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 1, Pp 18-22 (2017)
This paper aims to investigate the device parameters, including drain-induced barrier lowering (DIBL), subthreshold swing (SS), and saturation drive current, Id,sat, of bulk-Si n-channel FinFET devices (bulk n-FinFETs). The impact of lightly doped dr
Externí odkaz:
https://doaj.org/article/9275c6569a6b4258847de41cceafc9ec
Autor:
Luke Hu, Chih-Yi Wang, Po-Hsieh Lin, Ted Wang, Lee Chi-Ju, Mike Chang, Yi-Chuen Eng, Chun Mao Chiou, Tzu-Feng Chang, Steven Hsu, Ren Huang, Kuan-Yu Lu, Yen-Liang Wu, Chang I-Fan, C. S. Tseng, Chih-Wei Yang, Osbert Cheng
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 207-213 (2018)
This paper aims to investigate the recently proposed figure of merit, $\Delta V_{\mathrm{ DIBLSS}} /(I_{\mathrm{ on}} /I_{\mathrm{ off}})$ , in detail. Experimental results show that $\Delta V_{\mathrm{ DIBLSS}} /(I_{\mathrm{ on}} /I_{\mathrm{ off}})
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c09cf2fd14f9d635bdb8ec05b2eaec50
https://ieeexplore.ieee.org/document/8247186/
https://ieeexplore.ieee.org/document/8247186/
Autor:
Chien-Ting Lin, Yi-Chuen Eng, Chin-Hao Kuo, Steven Hsu, Osbert Cheng, Chia-Jung Hsu, Ted Wang, Chen Ming-Chih, Pei-Wen Wang, Chih-Wei Yang, Chih-Yi Wang, Chun Mao Chiou, I-Chang Wang, Tzu-Feng Chang, Andy Lai, Wen-Yuan Pang, Luke Hu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 1, Pp 18-22 (2017)
This paper aims to investigate the device parameters, including drain-induced barrier lowering (DIBL), subthreshold swing (SS), and saturation drive current, $I_{\rm d,{\mathrm{ sat}}} $ , of bulk-Si n-channel FinFET devices (bulk n-FinFETs). The imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d51dea5cecf1e80f3955636957a06ec0
https://doi.org/10.1109/jeds.2016.2626464
https://doi.org/10.1109/jeds.2016.2626464
Autor:
Chun-Mao Chiou, Yen-Chia Chen, Guo-Ju Chen, Wen-Cheng Chang, Yen-Hwei Chang, Chih-hao Liang, Yu-Cheng Lai
Publikováno v:
Journal of Applied Physics. 101:053913
The feasibility of controlling film microstructure and nanocomposition of FePt film with various compositions of the CoAg underlayer by ion beam sputtering accompanied by an external magnetic field was performed. The characteristic of phase separatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8b4a49232a8a0d949a81347ef04583b
https://doi.org/10.1063/1.2434973
https://doi.org/10.1063/1.2434973