Zobrazeno 1 - 10
of 107
pro vyhledávání: '"Chun Jung Su"'
Publikováno v:
Nanomaterials, Vol 14, Iss 11, p 934 (2024)
This study developed a DC-free technique that used dark-mode scanning capacitance microscopy (DM-SCM) with a small-area contact electrode to evaluate and image equivalent oxide thicknesses (EOTs). In contrast to the conventional capacitance–voltage
Externí odkaz:
https://doaj.org/article/535c325299de450a9a4df455708e0e6e
Autor:
Shi-Xian Guan, Tilo H. Yang, Chih-Hao Yang, Chuan-Jie Hong, Bor-Wei Liang, Kristan Bryan Simbulan, Jyun-Hong Chen, Chun-Jung Su, Kai-Shin Li, Yuan-Liang Zhong, Lain-Jong Li, Yann-Wen Lan
Publikováno v:
npj 2D Materials and Applications, Vol 7, Iss 1, Pp 1-8 (2023)
Abstract The performance enhancement of integrated circuits relying on dimension scaling (i.e., following Moore’s Law) is more and more challenging owing to the physical limit of Si materials. Monolithic three-dimensional (M3D) integration has been
Externí odkaz:
https://doaj.org/article/21909ef3fb1d41169b9cade8d1307404
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 490-496 (2023)
This work reports an ingenious hybrid thin-film transistor (TFT) process platform that allows monolithic integration of poly-Si and oxide-semiconductor (OS) TFT-based circuits using three-mask processes. The effectiveness of the proposed fabrication
Externí odkaz:
https://doaj.org/article/68a5eeda2c7a45ef90d8f67b0a6f1818
Autor:
Md. Aftab Baig, Cheng-Jui Yeh, Shu-Wei Chang, Bo-Han Qiu, Xiao-Shan Huang, Cheng-Hsien Tsai, Yu-Ming Chang, Po-Jung Sung, Chun-Jung Su, Ta-Chun Cho, Sourav De, Darsen Lu, Yao-Jen Lee, Wen-Hsi Lee, Wen-Fa Wu, Wen-Kuan Yeh
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 107-113 (2023)
Monolithic 3D stacking of complementary FET (CFET) SRAM arrays increases integration density multi-fold while supporting the inherent SRAM advantages of low write power and near-infinite endurance. We propose stacking multiple 8-transistor CFET-SRAM
Externí odkaz:
https://doaj.org/article/71ecc867419a46bfb68015417da2ac79
Autor:
Fei Mo, Jiawen Xiang, Xiaoran Mei, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto, Chun-Jung Su, Vita Pi-Ho Hu, Masaharu Kobayashi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 115-122 (2022)
We have fabricated junctionless N-type silicon-on-insulator (SOI) ferroelectric-HfO2 field effect transistors (FeFETs) with overlap and underlap structures between gate and drain/source regions to investigate the role of gate-induced-drain-leakage (G
Externí odkaz:
https://doaj.org/article/eafa049e2c034233909a0a15c81b3915
Autor:
Po-Jung Sung, Chun-Jung Su, Shih-Hsuan Lo, Fu-Kuo Hsueh, Darsen D. Lu, Yao-Jen Lee, Tien-Sheng Chao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 474-480 (2020)
In this study, ferroelectric FETs (FeFETs) and CMOS inverters are fabricated and analyzed, exhibiting 13% of 593 devices with sub-60 mV subthreshold swing (SS) at room temperature. Forming gas annealing (FGA) is found to not only enhance ferroelectri
Externí odkaz:
https://doaj.org/article/b2d47eea11114ee2bde6e615d2f53b36
Autor:
Sourav De, Md. Aftab Baig, Bo-Han Qiu, Franz Müller, Hoang-Hiep Le, Maximilian Lederer, Thomas Kämpfe, Tarek Ali, Po-Jung Sung, Chun-Jung Su, Yao-Jen Lee, Darsen D. Lu
Publikováno v:
Frontiers in Nanotechnology, Vol 3 (2022)
This work presents 2-bits/cell operation in deeply scaled ferroelectric finFETs (Fe-finFET) with a 1 µs write pulse of maximum ±5 V amplitude and WRITE endurance above 109 cycles. Fe-finFET devices with single and multiple fins have been fabricated
Externí odkaz:
https://doaj.org/article/e00d78ed90be40e29e7c428dbb80f3f5
Publikováno v:
Nanomaterials, Vol 12, Iss 3, p 468 (2022)
In this work, the ferroelectric characteristic of a 5 nm Hf0.5Zr0.5O2 (HZO) metal-ferroelectric-insulator-semiconductor (MFIS) device is enhanced through strained complementary metal oxide semiconductor (CMOS)-compatible TiN electrode engineering. St
Externí odkaz:
https://doaj.org/article/7e938b514fe348608a41f4693991bc43
Autor:
William Cheng-Yu Ma, Chun-Jung Su, Kuo-Hsing Kao, Yao-Jen Lee, Ju-Heng Lin, Pin-Hua Wu, Jui-Che Chang, Cheng-Lun Yen, Hsin-Chun Tseng, Hsu-Tang Liao, Yu-Wen Chou, Min-Yu Chiu, Yan-Qing Chen
Publikováno v:
IEEE Transactions on Electron Devices. 69:6072-6077
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa16de1a1a97238c30302c1ff2f45cfc
https://doi.org/10.1109/ted.2022.3208847
https://doi.org/10.1109/ted.2022.3208847
Autor:
Shu-Wei Chang, Tsung-Han Lu, Cong-Yi Yang, Cheng-Jui Yeh, Min-Kun Huang, Ching-Fan Meng, Po-Jen Chen, Ting-Hsuan Chang, Yan-Shiuan Chang, Jhe-Wei Jhu, Tzu-Chieh Hong, Chu-Chu Ke, Xin-Ren Yu, Wen-Hsiang Lu, Mohammed Aftab Baig, Ta-Chun Cho, Po-Jung Sung, Chun-Jung Su, Fu-Kuo Hsueh, Bo-Yuan Chen, Hsin-Hui Hu, Chien-Ting Wu, Kun-Lin Lin, William Cheng-Yu Ma, Darsen D. Lu, Kuo-Hsing Kao, Yao-Jen Lee, Cheng-Li Lin, Kun-Ping Huang, Kun-Ming Chen, Yiming Li, Seiji Samukawa, Tien-Sheng Chao, Guo-Wei Huang, Wen-Fa Wu, Wen-Hsi Lee, Jiun-Yun Li, Jia-Min Shieh, Jenn-Hwan Tarng, Yeong-Her Wang, Wen-Kuan Yeh
Publikováno v:
IEEE Transactions on Electron Devices. 69:2101-2107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa9cb013d52736a9ce09e236a25eabeb
https://doi.org/10.1109/ted.2021.3138947
https://doi.org/10.1109/ted.2021.3138947