Zobrazeno 1 - 10
of 194
pro vyhledávání: '"Chun Hung Lai"'
Autor:
Huan-wei, Chen, Shan, Liao, Wan-Yee, Lau, Feng-jie, Wang, Fei-wen, Deng, Chun-hung, Lai Eric, Zuo-jun, Zhen
Publikováno v:
In International Journal of Surgery January 2015 13:297-301
Publikováno v:
Applied Sciences, Vol 9, Iss 7, p 1432 (2019)
A Cu/SiO2/Pt structure is usually used to study the resistive memory properties of an electrochemical resistive random access memory. It can be reversibly switched between low- and high-resistance states by using DC voltages in the atmosphere. Howeve
Externí odkaz:
https://doaj.org/article/5e8f856e3e984e5dbe0993880c5d9f4e
Publikováno v:
2022 8th International Conference on Applied System Innovation (ICASI).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dc2f4ec67a6506b4cfebcaaaa2c4648
https://doi.org/10.1109/icasi55125.2022.9774471
https://doi.org/10.1109/icasi55125.2022.9774471
Publikováno v:
Modern Physics Letters B. 36
A radio-frequency magnetron sputter was used to deposit a 60 nm TiO[Formula: see text] film on a W-coated Si substrate at room temperature. Subsequently, a 100 nm Ni film was deposited using a thermal evaporator to form a Ni/TiO[Formula: see text]/W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ba4e1df1f572efa1fd0c394b9ca042a
https://doi.org/10.1142/s0217984922420386
https://doi.org/10.1142/s0217984922420386
Autor:
Chun-Hung Lai1 brandon@nuu.edu.tw, Hung-Wei Chen1 hwchen@nuu.edu.tw, Chih-Yi Liu2 cyliu@cc.kuas.edu.tw
Publikováno v:
Materials (1996-1944). Jul2016, Vol. 9 Issue 7, p551. 9p. 5 Graphs.
Autor:
Xiao-Hui, Fu, Chun Hung, Lai Eric, Xiao-Ping, Yao, Kai-Jian, Chu, Shu-Qun, Cheng, Feng, Shen, Meng-Chao, Wu, Yee, Lau Wan
Publikováno v:
In The American Journal of Surgery 2009 198(2):184-187
Autor:
Wen-chang Lin, Chew-Wun Wu, Wen-Liang Fang, Chao-Yu Pan, Chun-Hung Lai, Hsiao-Wei Kao, Kuo Hung Huang
Publikováno v:
Oncotarget
// Hsiao-Wei Kao 1, * , Chao-Yu Pan 1, 2, * , Chun-Hung Lai 1 , Chew-Wun Wu 3 , Wen-Liang Fang 3 , Kuo-Hung Huang 3 and Wen-Chang Lin 1, 2 1 Institute of Biomedical Sciences, Academia Sinica, Taipei, Taiwan 2 Institute of Biomedical Informatics, Nati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5cf8cd5fcba996010df73bbad7cad75
https://doi.org/10.18632/oncotarget.16916
https://doi.org/10.18632/oncotarget.16916
Publikováno v:
Coatings, Vol 10, Iss 1146, p 1146 (2020)
Coatings
Volume 10
Issue 12
Coatings
Volume 10
Issue 12
In this work, two stacked gate dielectrics of Al2O3/tetraethyl-orthosilicate (TEOS) oxide were deposited by using the equivalent capacitance with 100-nm thick TEOS oxide on the patterned InGaZnO layers to evaluate the electrical characteristics and s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c33081f09c5bcd2ce28b9863d1d64a1
https://www.mdpi.com/2079-6412/10/12/1146
https://www.mdpi.com/2079-6412/10/12/1146
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 26:663-670
The cache memory has been a predominant component in modern chips, easily taking up more than 50% of the silicon area. It is then desirable to make the cache memory flexible for different needs. Therefore, many modern processor chips allow users to c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92605b0bf8413d946fdf7f95eb6c3bbb
https://doi.org/10.1109/tvlsi.2017.2785222
https://doi.org/10.1109/tvlsi.2017.2785222
Autor:
Yu Chuan Chen, Chun Hung Lai, Cheng-Hsing Hsu, Ching Fang Tseng, Wen Shiush Chen, Hsin Han Tung, Jenn Sen Lin
Publikováno v:
Materials Science Forum. 898:392-398
(Ca0.2Sr0.8)3(ZrxTi1-x)2O7 (x = 0.02-0.1) ceramic prepared by the solid state method was investigated for its microstructure and microwave dielectric properties. The correlation between the microstructure and microwave dielectric properties was also
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcb1c20f9b7a3450b3f4af58ba5310d1
https://doi.org/10.4028/www.scientific.net/msf.898.392
https://doi.org/10.4028/www.scientific.net/msf.898.392