Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Chun Hui Low"'
Autor:
Chun Hui Low, Anbu Selvam Km Mahalingam, Ming He, DeNeil Park, Alycia Roux, Yue Zhou, Mert Karakoy, Daniel Fisher, Mary Claire Silvestre, Craig Child
Publikováno v:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
For metal pitches below 50nm, triple patterning (LELELE) integration is utilized in most advanced technologies to build the Cu interconnect. This integration relies on etch to shrink to the target critical dimension. As a result of high iso-dense bia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce8c06de8656b2d11b892a74af58948c
https://doi.org/10.1109/asmc.2017.7969189
https://doi.org/10.1109/asmc.2017.7969189
Autor:
Aleksandra Clancy, Ayman Hamouda, Ashwini Chandrasekhar, Shyam Pal, Jeff Shu, Christopher Ordonio, Jason Eugene Stephens, Chun Hui Low, Ming He, Prakash Periasamy, Mary Claire Silvestre, Anbu Selvam Km Mahalingam, Peter Welti, Craig Child, Granger Lobb, Ketan Shah
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
10nm M1 local interconnect is using three-color litho-etch-litho-etch-litho-etch (LELELE) integration to enable technology scaling. This paper discusses the challenges to balance the three-color density in critical standard cell scaling, illustrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7a2ece826e66bfdf116c6484b2c2ed5
https://doi.org/10.1109/iitc-amc.2016.7507642
https://doi.org/10.1109/iitc-amc.2016.7507642
Autor:
Craig Child, Prakash Periasamy, Ashwini Chandrasekhar, Shyam Pal, Chun Hui Low, Anbu Selvam Km Mahalingam, Ketan Shah, Christopher Ordonio, Peter Welti
Publikováno v:
2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In advanced technology nodes, the BEOL requires advanced patterning techniques such as triple patterning (LELELE) and side wall image transfer techniques to form metal and via structures with pitches below 50nm. In this paper, we demonstrate metal cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2de681e559d4c68e72791f7ec32be1a
https://doi.org/10.1109/asmc.2016.7491157
https://doi.org/10.1109/asmc.2016.7491157
Autor:
Wu Ping Liu, Liang Choo Hsia, Chun Hui Low, Juan Boon Tan, Hai Cong, Xin Zhang, Yelehanka Ramachandramurthy Pradeep, Perera Chandima
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:1404-1409
In SiOCH (C-doped SiO2) via etch application, high polymer deposition chemistry is needed for better selectivity to both photoresist and underlying barrier materials. To prevent etch stop, high ion energy plasma is required to achieve a good process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d33237f9829d7382898f05f18ee1f8b
https://doi.org/10.1116/1.2187990
https://doi.org/10.1116/1.2187990
Autor:
Ming He, Ordonio, Christopher, Chun Hui Low, Welti, Peter, Lobb, Granger, Clancy, Aleksandra, Shu, Jeff, Hamouda, Ayman, Stephens, Jason, Shah, Ketan, Chandrasekhar, Ashwini, Silvestre, Mary Claire, Periasamy, Prakash, Mahalingam, Anbu Selvam KM, Pal, Shyam, Child, Craig
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC); 2016, p15-17, 3p
Autor:
Hai Cong, Chun Hui Low, Pradeep, Yelehanka Ramachandramurthy, Xin Zhang, Chandima, Perera, Wu Ping Liu, Juan Boon Tan, Liang Choo Hsia
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Jul2006, Vol. 24 Issue 4, p1404-1409, 6p, 4 Black and White Photographs, 3 Diagrams, 4 Graphs