Zobrazeno 1 - 10
of 280
pro vyhledávání: '"Chun‐Hu, Cheng"'
Autor:
Cun-Bo Liu, Ruo-Yin Liao, Hsuan-Han Chen, Zhi-Wei Zheng, Kuan-Hung Su, I-Cheng Lin, Ting-An Liang, Ping-Yu Lin, Chen-Hao Wen, Hsiao-Hsuan Hsu, Chun-Hu Cheng, Ching-Chien Huang
Publikováno v:
Materials Research Express, Vol 11, Iss 4, p 046404 (2024)
In this work, we adopt a low-temperature sustainable plasma treatment approach for the fabrication of ferroelectric memory devices. From our experimental results, we found that the ferroelectric polarization characteristics of HfAlO _x ferroelectric
Externí odkaz:
https://doaj.org/article/9e754756a3e248efa43ac4949ad56f3f
Autor:
Hsuan-Han Chen, Ruo-Yin Liao, Wu-Ching Chou, Hsiao-Hsuan Hsu, Chun-Hu Cheng, Ching-Chien Huang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 947-952 (2022)
In this work, we investigate that the capping layer (CL) engineering of aluminum oxide (AlOx) on the dopant-free hafnium oxide (HfOx) and the hafnium zirconium oxide (HfZrOx) ferroelectric metal-ferroelectric-metal (MFM) capacitors. The AlOx CL featu
Externí odkaz:
https://doaj.org/article/3fa5f8ba82e34d16a3e80f598941d8cb
Autor:
Guan-You He, Ming-Hao Li, Wei-Dong Liu, Lei-Ying Ying, Bao-Ping Zhang, Zhi-Wei Zheng, Chun-Hu Cheng
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 741-747 (2021)
With the simulation calibration for negative capacitor considering Landau model and multi-domain (MD) effect, MD MFIS negative capacitance field-effect transistor (NCFET) was thoroughly established for performing the simultaneous analysis of multi-va
Externí odkaz:
https://doaj.org/article/f993fec46e35492ea6801bb0f79e5753
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1076-1081 (2020)
In this work, we demonstrated a HfO2-based ferroelectric field-effect transistor (FeFET) in series with a HfAlO ferroelectric capacitor for memory application and further investigated the impact of the ferroelectric capacitor with different thickness
Externí odkaz:
https://doaj.org/article/80713727c59f43a390a574c4290efa27
Autor:
Kadiyam Rajshekar, Hsiao-Hsuan Hsu, Koppolu Uma Mahendra Kumar, P. Sathyanarayanan, V. Velmurugan, Chun-Hu Cheng, D. Kannadassan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 948-958 (2020)
Fabrication, physical modeling and dynamic response of p-type Al-doped SnOx active channel thin film transistors (TFTs) are presented for the potential application of ultra-high definition (UHD) displays. After deposition of Al-doped SnOx active laye
Externí odkaz:
https://doaj.org/article/a44958fdba044daa93dfe9c6a125253c
Autor:
Ching-Chien Huang, Chin-Chieh Mo, Tsung-Han Hsiao, Guan-Ming Chen, Sheng-Han Lu, Yen-Hua Tai, Hsiao-Hsuan Hsu, Chun-Hu Cheng
Publikováno v:
Results in Materials, Vol 8, Iss , Pp 100150- (2020)
In this study, the preparation and magnetic properties of Ca–Sr M-type (Ca1-x-yLaxSryFe10.9CozO19) ferrire magnets were investigated. A M-type singlephase calcined powder was synthesized with a composition of x = 0.45, y = 0.18 and z
Externí odkaz:
https://doaj.org/article/cd2c057e6ac14edd95105240f6790cdd
Publikováno v:
2022 IEEE 5th International Conference on Knowledge Innovation and Invention (ICKII ).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3995324745625b2e67853395457a45c8
https://doi.org/10.1109/ickii55100.2022.9983564
https://doi.org/10.1109/ickii55100.2022.9983564
Autor:
Ruo-Yin Liao, Hsuan-Han Chen, Ping-Yu Lin, Ting-An Liang, Kuan-Hung Su, I-Cheng Lin, Chen-Hao Wen, Wu-Ching Chou, Hsiao-Hsuan Hsu, Chun-Hu Cheng
Publikováno v:
Materials; Volume 16; Issue 9; Pages: 3306
In this work, we investigate the ferroelectricity of stacked zirconium oxide and hafnium oxide (stacked HfZrO) with different thickness ratios under metal gate stress and simultaneously evaluate the electrical reliability of stacked ferroelectric fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9408389b9678f56858bbdc719df2f762
https://doi.org/10.3390/ma16093306
https://doi.org/10.3390/ma16093306
Autor:
Shih-Hao Lin, Yung-Hsiung Hung, Chun-Hu Cheng, Ching-Chien Huang, Hsiao-Hsuan Hsu, Tsung-Han Hsiao, Chin-Chieh Mo, Chiu Chun-Hao, Yen-Hua Tai
Publikováno v:
IEEE Transactions on Magnetics. 57:1-7
In this work, an experiment was carried out to investigate the preparation condition of anisotropic Fe-deficient M-type Ca–Sr–La system ferrite with optimum magnetic and physical properties using the raw material Fe2O3 from steel industrial iron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8db25adc1f06f986ea5f27e927ea568a
https://doi.org/10.1109/tmag.2020.3042095
https://doi.org/10.1109/tmag.2020.3042095
Publikováno v:
Journal of Materials Science. 56:6286-6291
In this study, the plasma oxidation effect in tin-oxide (SnOx) thin film was investigated. And on this basis, we fabricated n-type thin-film transistors (TFTs) using the SnOx thin film with the plasma oxidation by experiments. By adjusting the proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c20210cfbb9337b20e6762736ccf5bd8
https://doi.org/10.1007/s10853-020-05708-x
https://doi.org/10.1007/s10853-020-05708-x