Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Chulseung Jung"'
Autor:
Yena Kwon, Chulseung Jung, Seongin Hong, Hyeongi Kim, Cheol-Woong Yang, Byeong-Seon An, Na Liu, Sunkook Kim, Woong Choi, Soo Ho Choo, Jaehyun Hur, Jeonghun Kim, Seongjoon So
Publikováno v:
Nanoscale. 12:6991-6999
MoSe2 is an attractive transition-metal dichalcogenide with a two-dimensional layered structure and various attractive properties. Although MoSe2 is a promising negative electrode material for electrochemical applications, further investigation of Mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4514aae9cbcae4bff93eed79eef4bb28
https://doi.org/10.1039/c9nr10418f
https://doi.org/10.1039/c9nr10418f
Autor:
Na, Liu, Woong, Choi, Hyeongi, Kim, Chulseung, Jung, Jeonghun, Kim, Soo Ho, Choo, Yena, Kwon, Byeong-Seon, An, Seongin, Hong, Seongjoon, So, Cheol-Woong, Yang, Jaehyun, Hur, Sunkook, Kim
Publikováno v:
Nanoscale. 12(13)
MoSe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::c6838164d3d52cfba7aa92ae0ca1b0ee
https://pubmed.ncbi.nlm.nih.gov/32080697
https://pubmed.ncbi.nlm.nih.gov/32080697
Autor:
Jongyeol Baek, Demin Yin, Na Liu, Inturu Omkaram, Chulseung Jung, Healin Im, Seongin Hong, Seung Min Kim, Young Ki Hong, Jaehyun Hur, Youngki Yoon, Sunkook Kim
Publikováno v:
Nano Research. 10:1861-1871
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::379305cb0f198ffd73c4989590dcd98c
https://doi.org/10.1007/s12274-016-1291-7
https://doi.org/10.1007/s12274-016-1291-7
Autor:
Young Ki Hong, Yeong Hwan Ko, Hoyoung Tang, Wongeon Song, Yong-wan Jin, Jeong Il Park, Jong Won Chung, Jiyoul Lee, Chulseung Jung, Sunkook Kim, Min Hyung Lee, Jongsun Park, Bang Lin Lee, Sang Yoon Lee, Jae Su Yu
Publikováno v:
Organic Electronics. 15:3038-3042
We report a novel platform on which we design a flexible high-performance complementary metal–oxide–semiconductor (CMOS) inverter based on an inkjet-printed polymer PMOS and a two-dimensional (2D) multilayer molybdenum disulfide (MoS 2 ) NMOS on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::545188ac6828a390c47a4adce9510efa
https://doi.org/10.1016/j.orgel.2014.08.003
https://doi.org/10.1016/j.orgel.2014.08.003
Autor:
Gyuchull Han, Seung Min Kim, Junyeon Kwon, I. Omkaram, Chulseung Jung, Yun Kyoung Hong, Jongjin Park, Youngbok Yoon, Hyunseong Moon, Sunkook Kim
Publikováno v:
SCIENTIFIC REPORTS(5)
Scientific Reports
Scientific Reports
Hexagonal molybdenum diselenide (MoSe2) multilayers were grown by chemical vapor deposition (CVD). A relatively high pressure (>760 Torr) was used during the CVD growth to achieve multilayers by creating multiple nuclei based on the two-dimensional c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba316aa77ee4e835549f98f47d87583a
Autor:
Na Liu, Seongin Hong, Demin Yin, Jaehyun Hur, Healin Im, Seung Min Kim, I. Omkaram, Youngki Yoon, Sunkook Kim, Jongyeol Baek, Chulseung Jung, Young Ki Hong
Publikováno v:
Nano Research. 10:2904-2904
Layered semiconductors with atomic thicknesses are becoming increasingly important as active elements in high-performance electronic devices owing to their high carrier mobilities, large surface-to-volume ratios, and rapid electrical responses to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbc75577e96dbb27ed41778e6f107072
https://doi.org/10.1007/s12274-017-1725-x
https://doi.org/10.1007/s12274-017-1725-x
Autor:
Na Liu, Chulseung Jung, Hyunseong Moon, Seongin Hong, Young Ki Hong, Inturu Omkaram, Sunkook Kim
Publikováno v:
ECS Meeting Abstracts. :1820-1820
Layered semiconductors based on transition metal dichalcogenides (TMDs) (MX2, M = Mo, W; X = S, Se, Te) exhibit many distinctive characteristics, including wide band gap (Eg > 1 eV), high carrier mobility (>100 cm2/VS), large photoresponsivity (~500
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42e1cd4a5b5cae40f12af81277ffeed9
https://doi.org/10.1149/ma2016-02/27/1820
https://doi.org/10.1149/ma2016-02/27/1820