Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Chulkwon Park"'
Autor:
Young Mo Kim, Chulkwon Park, Taewoo Ha, Useong Kim, Namwook Kim, Juyeon Shin, Youjung Kim, Jaejun Yu, Jae Hoon Kim, Kookrin Char
Publikováno v:
APL Materials, Vol 5, Iss 1, Pp 016104-016104-6 (2017)
We have investigated epitaxial BaHfO3 as a high-k perovskite dielectric. From x-ray diffraction measurement, we confirmed the epitaxial growth of BaHfO3 on BaSnO3 and MgO. We measured optical and dielectric properties of the BaHfO3 gate insulator; th
Externí odkaz:
https://doaj.org/article/5defd43710544dd197baf04b5dfa089e
Publikováno v:
APL Materials, Vol 4, Iss 5, Pp 056105-056105-7 (2016)
We report p-doping of the BaSnO3 (BSO) by replacing Ba with K. The activation energy of K-dopants is estimated to be about 0.5 eV. We have fabricated pn junctions by using K-doped BSO as a p-type and La-doped BSO as an n-type semiconductor. I-V chara
Externí odkaz:
https://doaj.org/article/bf39bf82efc644abb29e44fe884bcdca
Autor:
Useong Kim, Chulkwon Park, Taewoo Ha, Young Mo Kim, Namwook Kim, Chanjong Ju, Jisung Park, Jaejun Yu, Jae Hoon Kim, Kookrin Char
Publikováno v:
APL Materials, Vol 3, Iss 3, Pp 036101-036101-7 (2015)
We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO3 and LaInO3. We have developed epitaxial LaInO3 as the gate oxide on top of BaSnO3, which were recently reported
Externí odkaz:
https://doaj.org/article/29279566b28b4b8b96c8e52ac3df46fa
Autor:
Useong Kim, Chulkwon Park, Taewoo Ha, Rokyeon Kim, Hyo Sik Mun, Hoon Min Kim, Hyung Joon Kim, Tai Hoon Kim, Namwook Kim, Jaejun Yu, Kee Hoon Kim, Jae Hoon Kim, Kookrin Char
Publikováno v:
APL Materials, Vol 2, Iss 5, Pp 056107-056107-8 (2014)
We studied the conduction mechanism in Sb-doped BaSnO3 epitaxial films, and compared its behavior with that of the mechanism of its counterpart, La-doped BaSnO3. We found that the electron mobility in BaSnO3 films was reduced by almost 7 times when t
Externí odkaz:
https://doaj.org/article/4d9d5a055d004cb3b88f5e4220586ae1
Publikováno v:
Physical Review Applied. 13
We investigate the transport properties of a modified interface by intentionally inserting a nanometer-scale undoped ${\mathrm{Ba}\mathrm{Sn}\mathrm{O}}_{3}$ spacer layer at the ${\mathrm{La}\mathrm{In}\mathrm{O}}_{3}$/${\mathrm{Ba}}_{1\text{\ensurem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d45540936252cdc7c326ef212b59fdaa
https://doi.org/10.1103/physrevapplied.13.064066
https://doi.org/10.1103/physrevapplied.13.064066
Publikováno v:
Current Applied Physics. 16:300-304
We report on the electrical properties of SnO x thin films made by reactive sputtering of a Sn metal target and the performance of their field effect transistors with HfO x gate insulator on glass substrates. We investigated the electrical properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85b9f35ce1b17039c40a0c6e2b1f72e0
https://doi.org/10.1016/j.cap.2015.12.015
https://doi.org/10.1016/j.cap.2015.12.015
Autor:
Chulkwon Park, Jae Hoon Kim, J. D. Lim, Kookrin Char, Taewoo Ha, Jaejun Yu, Young Mo Kim, Juyeon Shin
Publikováno v:
Physical Review Materials. 2
A wide band-gap perovskite oxide $\mathrm{BaSn}{\mathrm{O}}_{3}$ is attracting much attention due to its high electron mobility and oxygen stability. On the other hand, $\mathrm{BaHf}{\mathrm{O}}_{3}$ was recently reported to be an effective high-$k$
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad6859cdfd46617dae7321a19c6f3181
https://doi.org/10.1103/physrevmaterials.2.021601
https://doi.org/10.1103/physrevmaterials.2.021601
Publikováno v:
Journal of Magnetism and Magnetic Materials
Journal of Magnetism and Magnetic Materials, Elsevier, 2012, 324 (19), pp.3013--3016. ⟨10.1016/j.jmmm.2012.04.047⟩
Journal of Magnetism and Magnetic Materials, Elsevier, 2012, 324 (19), pp.3013--3016. ⟨10.1016/j.jmmm.2012.04.047⟩
Theory has predicted that high temperature ferromagnetism (FM) should be found in cubic fake-diamonds, Mn-doped ZrO 2 . Experimentally, it is shown that Mn-doped ZrO 2 ceramics are not ferromagnetic, but the nanosized Mn-doped ZrO 2 thin films grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c6bfdbc016bf1df936d93a3ebaf28f5
https://doi.org/10.1016/j.jmmm.2012.04.047
https://doi.org/10.1016/j.jmmm.2012.04.047
Publikováno v:
Journal of Magnetism and Magnetic Materials. 324:1814-1817
The effect of annealing conditions on structural and magnetic properties of copper ferrite thin films on (100) Si substrates was examined in detail. After deposition, the ferrite thin films were post-annealed in vacuum and in oxygen atmosphere for se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2336a12e81d6e6718fbea49bb71c21a
https://doi.org/10.1016/j.jmmm.2012.01.004
https://doi.org/10.1016/j.jmmm.2012.01.004
Autor:
Youjung Kim, Kookrin Char, Juyeon Shin, Namwook Kim, Chulkwon Park, Useong Kim, Young Mo Kim, Jae Hoon Kim, Jaejun Yu, Taewoo Ha
Publikováno v:
APL Materials, Vol 5, Iss 1, Pp 016104-016104-6 (2017)
We have investigated epitaxial BaHfO3 as a high-k perovskite dielectric. From x-ray diffraction measurement, we confirmed the epitaxial growth of BaHfO3 on BaSnO3 and MgO. We measured optical and dielectric properties of the BaHfO3 gate insulator; th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee46d6c4184fec4dbd773d1c7a9bc116
https://doaj.org/article/5defd43710544dd197baf04b5dfa089e
https://doaj.org/article/5defd43710544dd197baf04b5dfa089e