Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Chulbum Kim"'
Autor:
HyunWook Park, Doohyun Kim, Jae Doeg Yu, Hyun-Jun Yoon, Jonghoon Park, Kye-Hyun Kyung, Hyung-Gon Kim, Jinbae Bang, Chulbum Kim, Jeong-Don Ihm, Yong-Ha Park, Seung-Bum Kim, Woopyo Jeong, Hwajun Jang, Ji-Young Lee, Il Han Park, Nahyun Kim, Pansuk Kwak, Yang-Lo Ahn, Ki-Tae Park, Jong-Hoon Lee, Sanggi Hong, Hyun-Jin Kim, Park Jiyoon, Dae Seok Byeon, Jin-Yub Lee, Young-don Choi, Moosung Kim, Nayoung Choi, Seung-Hwan Song
Publikováno v:
IEEE Journal of Solid-State Circuits. 53:124-133
A 64-word-line-stacked 512-Gb 3-b/cell 3-D NAND flash memory is presented. After briefly examining the challenges that occur to a stack, several technologies are suggested to resolve the issues. For performance enhancement, a novel program method hid
Autor:
Jaedoeg Yu, Kyung-Tae Kang, Jin-Yup Lee, Hyung-Gon Kim, Doo-Sub Lee, Jeong-Don Ihm, Young-Sun Min, An-Soo Park, Chulbum Kim, Jinho Ryu, Dongku Kang, Pansuk Kwak, Doohyun Kim, Kyung-Min Kang, Sung-Yeon Lee, Yong Sung Cho, Moosung Kim, Wandong Kim, Lee Han-Jun, Cheon An Lee, In-Mo Kim, Bong-Kil Jung, Woopyo Jeong, Jae-Ick Son, Nayoung Choi, Ki-Tae Park, Kye-Hyun Kyung, Dae-Seok Byeon, Dong-Su Jang
Publikováno v:
IEEE Journal of Solid-State Circuits. 52:210-217
A 48 WL stacked 256-Gb V-NAND flash memory with a 3 b MLC technology is presented. Several vertical scale-down effects such as deteriorated WL loading and variations are discussed. To enhance performance, reverse read scheme and variable-pulse scheme
Autor:
Ki-whan Song, Gyo Soo Choo, Kitae Park, Kye-Hyun Kyung, Dae-Seok Byeon, Jisu Kim, Jinbae Bang, Moosung Kim, Lee Kang-Bin, Lee Han-Jun, Seung-Bum Kim, Seonyong Lee, Minyeong Lee, Sung-Min Joe, Jinwon Choi, Jonghoo Jo, Kyung Min Kim, Chulbum Kim, Jeong-Don Lim, Young-Sun Min, Young-don Choi, Joon-Suc Jang, Dongjin Shin, Nahyun Kim, Rho Young-Sik, Park Jiyoon, Jungkwan Kim, Hwajun Jang, Yong-Ha Park, Deokwoo Lee, Young-Hwan Ryu, SeonGeon Lee, Yu Chung-Ho, Ho-joon Kim, Minseok Kim, Jonghoon Park, Hyun-Jin Kim, Seung-Hyun Moon, Seung-jae Lee, Cheon An Lee, Sohyun Park, Minsu Kim
Publikováno v:
ISSCC
Since the first demonstration of a production quality three-dimensional (3D) stacked-word-line NAND Flash memory [1], the 3b/cell 3D NAND Flash memory has seen areal density increases of more than 50% per year due to the aggressive development of 3D-
Autor:
Dae-Woon Kang, Chunan Lee, Jin-Yub Lee, Hyung-Gon Kim, Kitae Park, HyunWook Park, Moosung Kim, Sangki Hong, Sung-Hoon Lee, Kye-Hyun Kyung, Jeong-Don Ihm, In-Mo Kim, Inryul Lee, Ji-Young Lee, Ji-Sang Lee, Hyun-Jun Yoon, Seung-Hwan Song, Dongkyu Yoon, Young-don Choi, Yelim Kwon, Yong-Ha Park, Sung-Hoon Kim, Ji-Ho Cho, Jaedoeg Yu, Park Jiyoon, Doohyun Kim, Nayoung Choi, Nahyun Kim, Chulbum Kim, Pansuk Kwak, Hyun-Jin Kim, Jong-Hoon Lee, Woopyo Jeong, Hwajun Jang, Jonghoon Park, Byung-Hoon Jeong, Won-Tae Kim, Young-Sun Min, Yang-Lo Ahn, Ki-Sung Kim, Seung-Bum Kim, Dae-Seok Byeon, Jinbae Bang, Park Il-Han
Publikováno v:
ISSCC
The advent of emerging technologies such as cloud computing, big data, the internet of things and mobile computing is producing a tremendous amount of data. In the era of big data, storage devices with versatile characteristics are required for ultra
Autor:
Kye-Hyun Kyung, Pansuk Kwak, Jeong-Hyuk Choi, Jinho Ryu, Young-Sun Min, Nayoung Choi, Hyung-Gon Kim, Dae-Seok Byeon, Doohyun Kim, Jeong-Don Ihm, Hyang-ja Yang, Yong Sung Cho, Jaedoeg Yu, Dong-Su Jang, Kyung-Tae Kang, In-Mo Kim, Bong-Kil Jung, Wandong Kim, Kyung-Min Kang, Chulbum Kim, Dongku Kang, Kitae Park, Sung-Yeon Lee, Moosung Kim, Lee Han-Jun, Woopyo Jeong, An-Soo Park, Jae-Ick Son, Doo-gon Kim, Doo-Sub Lee
Publikováno v:
ISSCC
Today's explosive demand for data transfer is accelerating the development of non-volatile memory with even larger capacity and cheaper cost. Since the introduction of 3D technology in 2014 [1], V-NAND is believed to be a successful alternative to pl
A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface
Autor:
Kye-Hyun Kyung, Chulbum Kim, Hyung-Gon Kim, Pansuk Kwak, Jeon Hongsoo, Du-Heon Song, Jae-Yong Jeong, Kwang-Il Park, In-Youl Lee, Jinman Han, Jaewoo Lim, Young-Hyun Jun, Tae-Sung Lee, Young-Ho Lim, Yong-Sik Yim, Jinho Ryu, Doo-Seop Lee, Chang-hyun Cho, Bo-Keun Kim, Woopyo Jeong, Seonghwan Seo, Seong-Soon Cho
Publikováno v:
IEEE Journal of Solid-State Circuits. 47:981-989
A monolithic 64 Gb MLC NAND flash based on 21 nm process technology has been developed. The device consists of 4-plane arrays and provides page size of up to 32 KB. It also features a newly developed asynchronous DDR interface that can support up to
Autor:
Kye-Hyun Kyung, Soo-Woong Lee, Hyung-Gon Kim, Doo-Hyun Cho, Chilhee Chung, Sung-Soo Lee, Jung-Hoon Park, Hyuk-Jun Yoo, Yong-Ho Lim, Ju-Seok Lee, Kyung-min Kim, Ohsuk Kwon, Chulbum Kim, Sang-Lok Kim, Seungwoo Yu, Kitae Park, Youn-yeol Lee, Pansuk Kwak, Jung-ho Song, Sung-Jun Kim, Sang-Soo Park
Publikováno v:
ISSCC
Providing both low cost and high storage capacity by means of device scaling and multi-level cell has been a fundamental feature in developing of NAND flash memory to meet an ever-growing flash market. Recently, however, a high speed interface like D
Publikováno v:
2008 International Conference on Convergence and Hybrid Information Technology.
This paper presents the method of measuring level of quality control activities to ensure the quality of delivered software during the development cycle. Obviously, there are many key performance indexes derivable from the actual data associated with
Autor:
Chulbum Kim, Jinho Ryu, Taesung Lee, Hyeonggon Kim, Jeawoo Lim, Jaeyong Jeong, Seonghwan Seo, Hongsoo Jeon, Bokeun Kim, InYoul Lee, DooSeop Lee, PanSuk Kwak, Seongsoon Cho, Yongsik Yim, Changhyun Cho, Woopyo Jeong, Jin-Man Han, Dooheon Song, Kyehyun Kyung, Young-Ho Lim
Publikováno v:
2011 Symposium on VLSI Circuits (VLSIC); 2011, p196-197, 2p
Autor:
Hyunggon Kim, Jung-hoon Park, Ki-Tae Park, Pansuk Kwak, Ohsuk Kwon, Chulbum Kim, Younyeol Lee, Sangsoo Park, Kyungmin Kim, Doohyun Cho, Juseok Lee, Jungho Song, Soowoong Lee, Hyukjun Yoo, Sanglok Kim, Seungwoo Yu, Sungjun Kim, Sungsoo Lee, Kyehyun Kyung, Yong-Ho Lim
Publikováno v:
2010 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC); 2010, p442-443, 2p