Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Chul-Hee Jeon"'
Autor:
Chang-Yong Lee, Seung-Jun Bae, Jeong-Woo Lee, Seung-Hoon Oh, Yong-Hun Kim, Young-Soo Sohn, Gyo-Young Jin, Gong-Heum Han, Dong-seok Kang, Young-Hun Seo, Gun-hee Cho, Seung-Hyun Cho, Sam-Young Bang, Seong-Jin Jang, Youn-sik Park, Yong-Jun Kim, Kwang-Il Park, Jung-Hwan Choi, Seouk-Kyu Choi, Kyung-Bae Park, Sung-Geun Do, Young-Ju Kim, Keon-woo Park, Ji-Hak Yu, Jae-Sung Kim, Su-Yeon Doo, Jae-Koo Park, Chan-Yong Lee, Chang-Ho Shin, Hye-Jung Kwon, Byung-Cheol Kim, Hyuk-Jun Kwon, Sang-Sun Kim, Min-Su Ahn, Hyun-Soo Park, Chul-Hee Jeon, Lee Yong-Jae, Ki-Hun Yu, Sang-Yong Lee
Publikováno v:
IEEE Journal of Solid-State Circuits. 54:197-209
The graphic DRAM standard GDDR6 is developed to overcome the limitation of previous standards GDDR5/5X for achieving high-speed operation. This paper introduces 16-Gb GDDR6 DRAM with a per-bit trainable single-ended decision feedback equalizer (DFE),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d08bc4f852cc052f17c7e89b51e1192
https://doi.org/10.1109/jssc.2018.2883395
https://doi.org/10.1109/jssc.2018.2883395
Autor:
Yeong-Hwa Kim, Chul-Hee Jeon
Publikováno v:
Korean Journal of Applied Statistics. 29:987-998
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55956715d1e48657524e080c2b17e27a
https://doi.org/10.5351/kjas.2016.29.5.987
https://doi.org/10.5351/kjas.2016.29.5.987
Autor:
Lee Yong-Jae, Seung-Hyun Cho, Kyung-Bae Park, Seong-Jin Jang, Jong-Ho Lee, Min-Woo Won, Su-Yeon Doo, Youngseok Lee, Jung-Bum Shin, Youn-sik Park, Hyun-Soo Park, Jae-Sung Kim, Kwang-Il Park, Keon-woo Park, Sang-Yong Lee, Chul-Hee Jeon, Yoon-Joo Eom, Dong-seok Kang, Yong-Hun Kim, Ki-Hun Yu, Jae-Koo Park, Chan-Yong Lee, Sang-Hoon Jung, Yong-Jun Kim, Young-Soo Sohn, Gun-hee Cho, Jung-Hwan Choi, Seung-Jun Bae, Chang-Yong Lee, Sang-Sun Kim, Beob-Rae Cho, Chang-Ho Shin, Seung-Hoon Oh, Young-Sik Kim, Byeong-Cheol Kim, Yoon-Gue Song, Sung-Geun Do, Hyuk-Jun Kwon, Young-Ju Kim, Sam-Young Bang, Ji-Suk Kwon, Min-Su Ahn, Young-Hun Seo, Hyung-Kyu Kim, Jeong-Woo Lee, Gong-Heum Han, Ji-Hak Yu, Hye-Jung Kwon, Seouk-Kyu Choi
Publikováno v:
ISSCC
Starting at 512Mb 6Gb/s/pin [1], GDDR5's speed and density have been steadily developing for about 10 years; recently achieving 8Gb 9Gb/s/pin [2] with per-pin timing training. Although 8Gb GDDR5X can operate at 12Gb/s [3] by increasing the burst leng
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b3314102637da5c0ef4d2bd3d784505
https://doi.org/10.1109/isscc.2018.8310255
https://doi.org/10.1109/isscc.2018.8310255
Autor:
Seung-Hyun Cho, Seong-Jin Jang, Yoon-Sik Park, Jong-Ho Lee, Hyuk-Jun Kwon, Gyo-Young Jin, Min-Su Jang, Sung-Geun Do, Bo-Tak Lim, Beob-Rae Cho, Young-Hun Seo, Gong-Heum Han, Chul-Hee Jeon, Hyun-Soo Park, Jae-Woong Lee, Hyung-Kyu Kim, Hyoung-Ju Kim, In-Ho Im, Jae-Koo Park, Seung-Jun Bae, Jun-Young Park, Jae-Youl Lee, Chan-Yong Lee, Ki-Hun Yu, Kwang-Il Park, Su-Yeon Doo, Seung-Sub Lee, Hye-Jung Kwon, Jongwook Park, Jung-Hwan Choi, Seok-Ho Lee, Sang-Hoon Jung, Eunsung Seo, Sang-Sun Kim, Jung-Bum Shin, Hye-Ran Kim
Publikováno v:
ISSCC
With the growth of wearable devices, such as smart watches and smart glasses, there is an increasing demand for lower power dissipation, to achieve longer battery life with limited battery capacity. Nevertheless, memory bandwidth needs to increase to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0f825e2862316ff32770b6cc4b7d7eb
https://doi.org/10.1109/isscc.2017.7870427
https://doi.org/10.1109/isscc.2017.7870427
Autor:
Jinchul Heo, Ilchan Bae, Chul-Hee Jeon, Kidan Bae, Junekyun Park, Hajin Lim, Dongseok Shin, Jong-Ho Lee, Minjung Jin, Jinho Do, Lira Hwang, Jongwoo Park
Publikováno v:
2011 International Reliability Physics Symposium.
The propensity of HCI and BTI degradation of HfSiON MOSFET on strained SiN-CESL performance booster is meticulously investigated. It is found that HCI and BTI lifetime of HfO based n/p MOSFET devices depend on hydrogen, initial Dit and plasma chargin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1afb17a7539cddd111170ec1923bc4d6
https://doi.org/10.1109/irps.2011.5784592
https://doi.org/10.1109/irps.2011.5784592
Publikováno v:
2004 IEEE International Reliability Physics Symposium. Proceedings.
Failure mechanism of the submicron multilevel interconnects contained in quad flat package (QFP) subjected to the high temperature operating life. (HTOL) test conditions under temperature and bias was investigated. Apparently, TEM-EDX (X-ray dispersi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6693a2dbf6e21875b524bccd3b3b5fb6
https://doi.org/10.1109/relphy.2004.1315423
https://doi.org/10.1109/relphy.2004.1315423
Publikováno v:
IEEE International Integrated Reliability Workshop Final Report, 2002..
There have been new phenomena observed in advanced deep sub-micron CMOS technologies. Threshold voltage shift in deep submicron dual gate PMOSFETs due to negative bias temperature instability (NBTI) has become one of major issues among them in terms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b20ef633036502e414830cf916a20e10
https://doi.org/10.1109/irws.2002.1194249
https://doi.org/10.1109/irws.2002.1194249
Publikováno v:
IEEE International Integrated Reliability Workshop Final Report, 2002; 2002, p130-132, 3p