Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Chul Gi Ko"'
Publikováno v:
Journal of the Korean Physical Society. 62:1301-1306
We investigated the effect of Si diffusion on the optical properties of GaInP-AlGaInP multiple quantum wells (MQWs) grown at different growth temperatures. Photoluminescence (PL) measurements showed that the emission wavelength was shortened and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::350efb45643ee31a288c2a76ea7e3cd5
https://doi.org/10.3938/jkps.62.1301
https://doi.org/10.3938/jkps.62.1301
Autor:
Keun Man Song, Hyeong-Ho Park, Chul Gi Ko, Sang Hyun Jung, Hyun-Beom Shin, Jaejin Lee, Ho Kwan Kang
Publikováno v:
Microelectronic Engineering. 105:77-80
Photoluminescence (PL) enhancement is achieved by using a novel nano-grayscale (NGS) InGaN/GaN multiple quantum wells (MQWs) structures. NGS patterns on the n-GaN layer were fabricated with a low contrast electron beam resist by electron beam lithogr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d695251b5e0bc3e6d419372c8ca86f53
https://doi.org/10.1016/j.mee.2013.01.012
https://doi.org/10.1016/j.mee.2013.01.012
Autor:
Dae Ho Yoon, Chul Gi Ko, Chan Soo Shin, Jong Min Kim, Hogyoung Kim, Sung-Min Hwang, Hyung Koun Cho, Keun Man Song
Publikováno v:
Journal of Crystal Growth. 370:22-25
The effect of crystalline quality of undoped a-plane GaN buffer layers on the properties of Si-doped GaN layers grown with different doping levels was investigated. The dominant photoluminescence (PL) emission at about 3.42 eV (D1 band) for all Si-do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed0eec42de8265e7d3ad48a9f2d6cc3f
https://doi.org/10.1016/j.jcrysgro.2012.06.026
https://doi.org/10.1016/j.jcrysgro.2012.06.026
Autor:
Chul Gi Ko, Seong-Ju Bae, Keun-Man Song, Hogyoung Kim, Chang Zoo Kim, Chan Soo Shin, Je Hyuk Choi
Publikováno v:
Journal of the Korean Physical Society. 61:1097-1101
We investigated the doping profiles of Mg and Si dopants near the multiple quantum well (MQW) active region in 640-nm-band GaInP-AlGaInP red laser diodes (LDs). With a 200-nm-thick Mg diffusion barrier, optimal doping profiles were obtained with an M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdf121430d2008683efb3ccb2f24b06d
https://doi.org/10.3938/jkps.61.1097
https://doi.org/10.3938/jkps.61.1097
Publikováno v:
physica status solidi (a). 209:1168-1173
We report the device characteristics of InGaN/GaN blue vertical light emitting diodes (VLEDs) by additional KOH surface roughening process through the wafer-level fabrication/test, and their simulation analysis in terms of electrical and optical prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b95fe6a7eab3b48a98efb5c34ee7fcfa
https://doi.org/10.1002/pssa.201127557
https://doi.org/10.1002/pssa.201127557
Autor:
Hogyoung Kim, Sung-Min Hwang, Jong Min Kim, Chan Soo Shin, Dae Ho Yoon, Chul Gi Ko, Bo Hyun Kong, Keun Man Song, Hyung Koun Cho, Bong Kyun Kang
Publikováno v:
Applied Surface Science. 258:3565-3570
Nonpolar a-plane GaN layers grown on r-plane sapphire substrates were examined by using a two-step growth process. The higher initial growth pressure for the nucleation layer resulted in the improved crystalline quality with lower density of both thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5e4b2e852053e0bd78ae2d0db217f3c
https://doi.org/10.1016/j.apsusc.2011.11.114
https://doi.org/10.1016/j.apsusc.2011.11.114
Autor:
Chan-Soo Shin, Hyung Koun Cho, Keun-Man Song, Dae Ho Yoon, Jong Min Kim, Chul-Gi Ko, Bo-Hyun Kong, Dong-Hun Lee
Publikováno v:
Journal of Crystal Growth. 326:135-139
We investigated the influence of growth rate of Mg-doped a-plane GaN on the surface morphological and electrical properties, and the characteristics of InGaN-based nonpolar LEDs. Mg-doped a-plane GaN layers were grown on r-plane sapphire substrate by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::054207ac6f776f0c6d97673e9fb59d53
https://doi.org/10.1016/j.jcrysgro.2011.01.083
https://doi.org/10.1016/j.jcrysgro.2011.01.083
Electrical properties of GaN grown on a-plane GaN template by plasma-assisted molecular beam epitaxy
Autor:
Hyung Koun Cho, Keun Man Song, Seong Ju Bae, Chul Gi Ko, Bo Hyun Kong, Chan Soo Shin, Jong Min Kim
Publikováno v:
Journal of Crystal Growth. 324:36-40
a -Plane GaN templates were grown on r -plane sapphire substrate by metalorganic vapor phase epitaxy (MOVPE) and then undoped a -plane GaN layers were grown at different growth temperatures on the a -plane GaN templates by plasma-assisted molecular b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45e8afa98acdd2f6aed41a32ab81e40f
https://doi.org/10.1016/j.jcrysgro.2011.03.046
https://doi.org/10.1016/j.jcrysgro.2011.03.046
Autor:
Jong Min Kim, Keun-Man Song, Chan-Soo Shin, Dae Ho Yoon, Dae-Hun Kang, Chul-Gi Ko, Won-Kyu Park, Sung-Min Hwang, Dong-Hun Lee
Publikováno v:
Journal of Crystal Growth. 315:178-182
Non-polar a-plane GaN layers were grown directly on r-plane sapphire substrates without a buffer layer. This study examined the effect of initial growth pressure on crystalline anisotropy and quality of a-plane GaN grown by metalorganic vapor phase e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::165804626ce3c1c541616cfbd1ec46c2
https://doi.org/10.1016/j.jcrysgro.2010.09.018
https://doi.org/10.1016/j.jcrysgro.2010.09.018
Autor:
Pil-Geun Kang, Jong Min Kim, Keun-Man Song, Chul-Gi Ko, Dae Ho Yoon, Heung Soo Shin, Won-Kyu Park, Hyunwook Shim
Publikováno v:
Journal of Crystal Growth. 312:2847-2851
This study examined the influence of strain-compensated triple AlGaN/GaN/InGaN superlattice structures (SLs) in n-GaN on the structural, electrical and optical characteristics of LEDs by analyzing the etch pits density (EPD), stress measurement, high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c489d185a41aa48e887f4b4d5e50855a
https://doi.org/10.1016/j.jcrysgro.2010.06.028
https://doi.org/10.1016/j.jcrysgro.2010.06.028