Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Chuang-Ju Lin"'
Autor:
Kun-Ming Chen, Chuang-Ju Lin, Chia-Wei Chuang, Hsuan-Cheng Pai, Edward-Yi Chang, Guo-Wei Huang
Publikováno v:
Micromachines, Vol 14, Iss 5, p 1011 (2023)
GaN high-electron-mobility transistors (HEMTs) have attracted widespread attention for high-power microwave applications, owing to their superior properties. However, the charge trapping effect has limitations to its performance. To study the trappin
Externí odkaz:
https://doaj.org/article/6d6dffed99d14b6e8477db636268c646
Publikováno v:
ECS Journal of Solid State Science and Technology. 11:065008
A new method for extraction of bias-dependent source and drain resistances in AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) is reported. The total source/drain access resistances are extracted by measuring the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::535a2c1b351296881508ca0acba79b27
https://doi.org/10.1149/2162-8777/ac7661
https://doi.org/10.1149/2162-8777/ac7661
Autor:
Chuang Ju Lin, Guo-Wei Huang, Chao Wen Lin, Edward Yi Chang, Kun-Ming Chen, Venkatesan Nagarajan
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:055004
The high-frequency characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) and metal-insulator-semiconductor HEMTs (MIS-HEMTs) are investigated under ultraviolet (UV) radiation with 365 nm wavelength. When HEMTs and MIS-HEMTs are illu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cce7785245ed29193fa2205979ce2062
https://doi.org/10.1149/2162-8777/abf9eb
https://doi.org/10.1149/2162-8777/abf9eb
Autor:
Kun-Ming Chen, Chuang-Ju Lin, Nagarajan, Venkatesan, Edward Yi Chang, Chao-Wen Lin, Guo-Wei Huang
Publikováno v:
ECS Journal of Solid State Science & Technology; May2021, Vol. 10 Issue 5, p1-6, 6p
Autor:
Hsin-Hui Hu, Sankalp Kumar Singh, Chai-Hsun Wu, Deepak Anandan, Guo-Wei Huang, Chuang-Ju Lin, Venkatesan Nagarajan, Kun-Ming Chen, Bo-Yuan Chen, Edward Yi Chang, Hsin-Yi Lin
Publikováno v:
IEEE Transactions on Nanotechnology. :1-1
The low-frequency noise characteristics of AlGaN/GaN HEMTs and MIS-HEMTs are investigated in the dark condition and under UV illumination. The test devices with a 3-μm-thick GaN buffer and a 25-nm-thick Al0.22Ga0.78N barrier layer were fabricated on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90889ba52277268edc1562f67e93baf1
https://doi.org/10.1109/tnano.2020.2992732
https://doi.org/10.1109/tnano.2020.2992732
Autor:
Yu-Chien Chiu, Hiroshi Iwai, Chung Kai Huang, P. C. Han, Franky Lumbantoruan, C. Y. Chang, Edward Yi Chang, Chenming Hu, Chih-Chiang Wu, Chang Po-Sheng, Lin Yue-Cin, Shih-Chien Liu, Chuang-Ju Lin
Publikováno v:
2017 Symposium on VLSI Technology.
In this work, we demonstrate a new concept for realizing high threshold voltage (V th ) E-mode GaN power devices with high maximum drain current (I D, max ). A gate stack ferroelectric blocking film with charge trap layer, achieved a large positive s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3922a29aeaa673d5a63f966f0e8f391
https://doi.org/10.23919/vlsit.2017.7998201
https://doi.org/10.23919/vlsit.2017.7998201
Autor:
Chuang Ju Lin, Bo Yuan Chen, Jia-Min Shieh, Fu-Kuo Hsueh, Hsiu Chih Chen, Chang Hong Shen, Yu Shao Jerry Shiao, Guo-Wei Huang, Kun-Ming Chen, Edward Yi Chang
Publikováno v:
Japanese Journal of Applied Physics. 58:SBBJ05
In this paper, we present the dc and high-frequency characteristics of trigate polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) for RF applications. Trigate TFTs were fabricated using a 3D-IC process and designed with a multi-finger gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::277146ec16bda6d8d54f6131f13e8d17
https://doi.org/10.7567/1347-4065/ab02e1
https://doi.org/10.7567/1347-4065/ab02e1
Autor:
Kow-Ming Chang, Bo-Wen Huang, Chien-Hung Wu, Yu-Xin Zhang, Yu-Hsuan Cheng, Yu-Li Lin, Chuang-Ju Lin, Hsin-Ying Chen, Shui-Jinn Wang, Ming-Chuan Lee, Jui-Mei Hsu, You-Xian Zheng
Publikováno v:
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO).
Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was applied for the fabrication of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). In this work, a-IGZO TFTs fabricated by AP-PECVD technique were firs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe5efc7b41c3f446348203162ca182ed
https://doi.org/10.1109/nano.2016.7751471
https://doi.org/10.1109/nano.2016.7751471
Autor:
Bo-Yuan Chen, Kun-Ming Chen, Yu-Shao Jerry Shiao, Chuang-Ju Lin, Guo-Wei Huang, Hsiu-Chih Chen, Fu-Kuo Hsueh, Chang-Hong Shen, Jia-Min Shieh, Edward Yi Chang
Publikováno v:
Japanese Journal of Applied Physics; Apr2019, Vol. 58 Issue SB, p1-1, 1p