Zobrazeno 1 - 10
of 897
pro vyhledávání: '"Chuang, F. C."'
Autor:
Fujisawa, Y., Pardo-Almanza, M., Hsu, C. H., Mohamed, A., Yamagami, K., Krishnadas, A., Chuang, F. C., Khoo, K. H., Zang, J., Soumyanarayanan, A., Okada, Y.
Magnetic semimetals have increasingly emerged as lucrative platforms hosting spin-based topological phenomena in real and momentum spaces. Of particular interest is the emergence of Berry curvature, whose geometric origin, accessibility from Hall tra
Externí odkaz:
http://arxiv.org/abs/2204.02518
Autor:
Yamagami, K., Fujisawa, Y., Driesen, B., Hsu, C. H., Kawaguchi, K., Tanaka, H., Kondo, T., Zhang, Y., Wadati, H., Araki, K., Takeda, T., Takeda, Y., Muro, T., Chuang, F. C., Niimi, Y., Kuroda, K., Kobayashi, M., Okada, Y.
Publikováno v:
Phys. Rev. B 103, 060403 (2021)
We investigate near-Fermi-energy (EF) element-specific electronic and spin states of ferromagnetic van der Waals (vdW) metal Fe5GeTe2. The soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) measurement provides spectroscopic evidence of
Externí odkaz:
http://arxiv.org/abs/2101.01324
Autor:
Fujisawa, Y., Pardo-Almanza, M., Garland, J., Yamagami, K., Zhu, X., Chen, X., Araki, K., Takeda, T., Kobayashi, M., Takeda, Y., Hsu, C. H., Chuang, F. C., Laskowski, R., Khoo, K. H., Soumyanarayanan, A., Okada, Y.
Publikováno v:
Phys. Rev. Materials 4, 114001 (2020)
Magnetic transition metal dichalcogenide (TMD) films have recently emerged as promising candidates to host novel magnetic phases relevant to next-generation spintronic devices. However, systematic control of the magnetization orientation, or anisotro
Externí odkaz:
http://arxiv.org/abs/2008.00381
Autor:
Okuma, R., Ueta, D., Kuniyoshi, S., Fujisawa, Y., Smith, B., Hsu, C. H., Inagaki, Y., Si, W., Kawae, T., Lin, H., Chuang, F. C., Masuda, T., Kobayashi, R., Okada, Y.
CeTe3 is a unique platform to investigate the itinerant magnetism in a van der Waals (vdW) coupled metal. Despite chemical pressure being a promising route to boost quantum fluctuation in this system, a systematic study on the chemical pressure effec
Externí odkaz:
http://arxiv.org/abs/2007.15193
Publikováno v:
Applied Physics Letters 91, 171909 (2007)
Although (103) is a stable nominal orientation for both silicon and germanium, experimental observations revealed that in the case of silicon this surface remains disordered on an atomic scale even after careful annealing. We report here a set of low
Externí odkaz:
http://arxiv.org/abs/0709.0753
Publikováno v:
Journal of Applied Physics, 98, 073507 (2005)
Although unstable, the Si(337) orientation has been known to appear in diverse experimental situations such as the nanoscale faceting of Si(112), or in the case of miscutting a Si(113) surface. Various models for Si(337) have been proposed over time,
Externí odkaz:
http://arxiv.org/abs/cond-mat/0504011
Autor:
Mohanta, Antaryami, Jang, Der-Jun, Lu, Shu-Kai, Ling, Dah-Chin, Wang, J.S., Chen, R.-B., Chuang, F.-C.
Publikováno v:
In Journal of Luminescence March 2018 195:109-115
Publikováno v:
Surface Science 578, 183-195 (2005).
In this article we report the results of global structural optimization of the Si(114) surface, which is a stable high-index orientation of silicon. We use two independent procedures recently developed for the determination of surface reconstructions
Externí odkaz:
http://arxiv.org/abs/cond-mat/0411569
Publikováno v:
Surface Science 573, L375 - L381 (2004)
In this article we show that the reconstructions of semiconductor surfaces can be determined using a genetic procedure. Coupled with highly optimized interatomic potentials, the present approach represents an efficient tool for finding and sorting go
Externí odkaz:
http://arxiv.org/abs/cond-mat/0408228
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