Effects of internal stresses on the mechanical properties of deposition thin films

Autor: Chuang, C.T., Chao, C.K., Chang, R.C., Chu, K.Y.

Publikováno v: In Journal of Materials Processing Tech. 2008 201(1):770-774

PARAMETER IDENTIFICATION IN PINHOLE CAMERA VISION SYSTEM: AN ENHANCED APPROACH

Autor: Chen, C.K., Jang, M.J., Chuang, C.T.

Publikováno v: In IFAC Proceedings Volumes 2005 38(1):74-79

Analysis of the effect of the gate oxide breakdown on SRAM stability

Autor: Rodrı́guez, R., Stathis, J.H., Linder, B.P., Kowalczyk, S., Chuang, C.T., Joshi, R.V., Northrop, G., Bernstein, K., Bhavnagarwala, A.J., Lombardo, S.

Publikováno v: In Microelectronics Reliability 2002 42(9):1445-1448

The impact of gate-oxide breakdown on SRAM stability

Autor: Rodriguez R., Stathis J.H., Linder B.P., Kowalczyk S., Chuang C.T., Joshi R.V., Northrop G., Bernstein K., Bhavnagarwala A.J., Lombardo S.

Publikováno v: IEEE electron device letters
23 (2002): 559–561.
info:cnr-pdr/source/autori:Rodriguez R., Stathis J.H., Linder B.P., Kowalczyk S., Chuang C.T., Joshi R.V., Northrop G., Bernstein K., Bhavnagarwala A.J., Lombardo S./titolo:The impact of gate-oxide breakdown on SRAM stability/doi:/rivista:IEEE electron device letters (Print)/anno:2002/pagina_da:559/pagina_a:561/intervallo_pagine:559–561/volume:23

We have investigated the effects of oxide soft breakdown (SBD) on the stability of CMOS 6T SRAM cells. Gate-to-diffusion leakage currents of 20-50 A at the n-FET source can result in a 50% reduction of noise margin. Breakdown at other locations in th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::cb42473fa46f3b2bd489d10733754539
http://www.cnr.it/prodotto/i/35270

Leakage Analysis for FinFET Devices using Self-Consistent Electro-Thermal Modeling.

Autor: Kumar, S., Joshi, R.V., Chuang, C.T., Kim, K., Murthy, J.Y.

Publikováno v: 2007 IEEE International Conference on Integrated Circuit Design & Technology; 2007, p1-4, 4p