Výsledky vyhledávání - "Chuanbin Zeng"

Akademický článek

Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs

Autor: Rui Liu, Linchun Gao, Juanjuan Wang, Tao Ni, Yifan Li, Runjian Wang, Duoli Li, Jianhui Bu, Chuanbin Zeng, Bo Li, Jiajun Luo

Publikováno v: Micromachines, Vol 14, Iss 3, p 602 (2023)

In this work, we present new evidence of the physical mechanism behind the generation of low-frequency noise with high interface-trap density by measuring the low-frequency noise magnitudes of partially depleted (PD) silicon-on-insulator (SOI) NMOSFE

Externí odkaz: https://doaj.org/article/153a580e3a644aa4b1b2b1c12de7b373

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Akademický článek

Analysis of Degradation of Electromigration Reliability of Au-Al and OPM Wire Bonded Contacts at 250 °C Using Resistance Monitoring Method

Autor: Xueqin Li, Linchun Gao, Tao Ni, Jingnan Zhou, Xiaojing Li, Yifan Li, Lida Xu, Runjian Wang, Chuanbin Zeng, Bo Li, Jiajun Luo, Jing Li

Publikováno v: Micromachines, Vol 14, Iss 3, p 640 (2023)

The ongoing trend towards miniaturization and increased packaging density has exacerbated the reliability problem of Au-Al heterogeneous metal bonding structures in high-temperature environments, where extreme temperatures and high current pose a ser

Externí odkaz: https://doaj.org/article/58282dbb1b8e462288641c3cddec1928

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Akademický článek

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

Autor: Yangyang Li, Xiaojing Li, Bo Li, Linchun Gao, Weiwei Yan, Fangfang Wang, Duoli Li, Chuanbin Zeng, Jiajun Luo, Zhengsheng Han

Publikováno v: IEEE Access, Vol 7, Pp 115989-115996 (2019)

This paper investigates the effect of total ionizing dose radiation on back-gate interface traps in SOI NMOSFETs. The concentration and energy distribution of interface traps at Si/SiO2 back-gate interface of SOI NMOSFETs during irradiation are studi

Externí odkaz: https://doaj.org/article/7b5b4e9de4a24c5abd06e3116124ac73

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Akademický článek

The Effect of Doping on the Digital Etching of Silicon-Selective Silicon–Germanium Using Nitric Acids

Autor: Yangyang Li, Huilong Zhu, Zhenzhen Kong, Yongkui Zhang, Xuezheng Ai, Guilei Wang, Qi Wang, Ziyi Liu, Shunshun Lu, Lu Xie, Weixing Huang, Yongbo Liu, Chen Li, Junjie Li, Hongxiao Lin, Jiale Su, Chuanbin Zeng, Henry H. Radamson

Publikováno v: Nanomaterials, Vol 11, Iss 5, p 1209 (2021)

Gate-all-around (GAA) field-effect transistors have been proposed as one of the most important developments for CMOS logic devices at the 3 nm technology node and beyond. Isotropic etching of silicon–germanium (SiGe) for the definition of nano-scal

Externí odkaz: https://doaj.org/article/4dcf8caf58a342eda355502ff25c8f9e

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