Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Chuan-Wei Tsou"'
Autor:
Daryl Key, Edward Letts, Chuan-Wei Tsou, Mi-Hee Ji, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Shyh-Chiang Shen, Russell Dupuis, Tadao Hashimoto
Publikováno v:
Materials, Vol 12, Iss 12, p 1925 (2019)
Free-standing gallium nitride (GaN) substrates are in high demand for power devices, laser diodes, and high-power light emitting diodes (LEDs). SixPoint Materials Inc. has begun producing 2” GaN substrates through our proprietary Near Equilibrium A
Externí odkaz:
https://doaj.org/article/1576668a9ca04c5d8082f83c74188a0c
Autor:
Chuan-Wei Tsou, 鄒權煒
97
The aim of this thesis is to design Voltage-Controlled Oscillator (VCO) and Sub-Harmonic Mixer (SHM). The research theme can be divided into two parts： In the first part, the 57-GHz VCO is designed for Phase Lock Loop (PLL) system applicati
The aim of this thesis is to design Voltage-Controlled Oscillator (VCO) and Sub-Harmonic Mixer (SHM). The research theme can be divided into two parts： In the first part, the 57-GHz VCO is designed for Phase Lock Loop (PLL) system applicati
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/43586407907588604181
Autor:
Chuan-Wei Tsou, Russell D. Dupuis, Zhiyu Xu, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Minkyu Cho, Hoon Jeong, Shyh-Chiang Shen
Publikováno v:
IEEE Transactions on Electron Devices. 68:2759-2763
We report high-performance homojunction GaN avalanche photodiodes (APDs) grown on a low-defect GaN substrate and fabricated with an ion-implantation isolation method. High-quality p-i-n GaN layers were grown using metalorganic chemical vapor depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7cddaf09965101ffb480195027c5d2f
https://doi.org/10.1109/ted.2021.3069153
https://doi.org/10.1109/ted.2021.3069153
Autor:
Chuan-Wei Tsou, Minkyu Cho, Russell D. Dupuis, Can Cao, Shyh-Chiang Shen, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Hoon Jeong, Zhiyu Xu
Publikováno v:
Journal of Electronic Materials. 50:4462-4468
Front-illuminated GaN-based p-i-n ultraviolet (UV) avalanche photodiodes (APDs) were grown by metalorganic chemical vapor deposition on a free-standing GaN substrate. X-ray diffraction measurements confirm the high crystal quality of the grown struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16e6b99de25304ee4e3e5fe0d9827a16
https://doi.org/10.1007/s11664-021-08981-x
https://doi.org/10.1007/s11664-021-08981-x
Autor:
Shyh-Chiang Shen, Chuan-Wei Tsou, Marzieh Bakhtiary-Noodeh, Russell D. Dupuis, Theeradetch Detchprohm, Hoon Jeong, Minkyu Cho
Publikováno v:
Conference on Lasers and Electro-Optics.
We report high-performance GaN avalanche photodiodes using a novel ion implanted isolation technique. The devices showed low dark current, an equivalent noise power of < 5×10−16 WHz−0.5 and avalanche gain of 7×105 at λ = 280 nm.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f0081ff4209cf260c8a01a842a9cdff
https://doi.org/10.1364/cleo_at.2020.af1i.7
https://doi.org/10.1364/cleo_at.2020.af1i.7
Autor:
Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Russell D. Dupuis, Hoon Jeong, P. Douglas Yoder, Karan Mehta, Chuan-Wei Tsou, Ping Chen, Shyh-Chiang Shen, Hi-Hee Ji
Publikováno v:
UV and Higher Energy Photonics: From Materials to Applications 2019.
We report the current progress of our development of near-ultraviolet (NUV) III-nitride vertical-cavity LED emitters and avalanche photodetectors grown by metalorganic chemical vapor deposition (MOCVD). The III-N emitters are designed to be UV vertic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e844ff0533a6e0beac73db8eb84810b2
https://doi.org/10.1117/12.2540048
https://doi.org/10.1117/12.2540048
Autor:
Theeradetch Detchprohm, Russell D. Dupuis, Edward Letts, Mi-Hee Ji, Chuan-Wei Tsou, Shyh-Chiang Shen, Marzieh Bakhtiary-Noodeh, Tadao Hashimoto, Daryl Key
Publikováno v:
Materials, Vol 12, Iss 12, p 1925 (2019)
Materials
Volume 12
Issue 12
Materials
Volume 12
Issue 12
Free-standing gallium nitride (GaN) substrates are in high demand for power devices, laser diodes, and high-power light emitting diodes (LEDs). SixPoint Materials Inc. has begun producing 2&rdquo
GaN substrates through our proprietary Near Equil
GaN substrates through our proprietary Near Equil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32c267c7e3033402819b093264157dcb
https://www.mdpi.com/1996-1944/12/12/1925
https://www.mdpi.com/1996-1944/12/12/1925
Autor:
Jialin Wang, Karan Mehta, Russell D. Dupuis, Theeradetch Detchprohm, Chuan-Wei Tsou, Young Jae Park, Hoon Jeong, Shyh-Chiang Shen, P. Douglas Yoder
Publikováno v:
Gallium Nitride Materials and Devices XIV.
We report III-N surface-emitting resonant-cavity light-emitting diodes (RCLEDs) at λ = 375 nm using a novel hybridmirror approach. The hybrid mirrors consist of 5 pairs of air-gap/AlGaN distributed Bragg reflector (DBR) at the bottom side of the ver
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f0c7c9229e0e320d395111318d4e612
https://doi.org/10.1117/12.2510860
https://doi.org/10.1117/12.2510860
Publikováno v:
IEEE Transactions on Electron Devices. 63:4218-4225
In this paper, the AlGaN/GaN high electron mobility transistors on a low resistivity Si substrate with the hybrid drain structure for RF applications are analyzed in detail, based on measurements, TCAD simulation, model extraction, and delay time cal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e47bb4d7f8cb33a0c14d3621b570da10
https://doi.org/10.1109/ted.2016.2605128
https://doi.org/10.1109/ted.2016.2605128
Publikováno v:
IEEE Electron Device Letters. 37:70-73
In this letter, we demonstrate high-performance AlGaN/GaN Schottky barrier diodes (SBDs) on Si substrate with a recessed-anode structure for reduced turn-on voltage $V_{\mathrm {ON}}$ . The impact of the surface roughness after the recessed-anode for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c7eed39738f5c6303d344f19580ec01
https://doi.org/10.1109/led.2015.2499267
https://doi.org/10.1109/led.2015.2499267