Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Chuan-Pu Chou"'
Publikováno v:
ACS Applied Materials & Interfaces. 13:26630-26638
Epitaxial GeSn (epi-GeSn) shows the capability to form ferroelectric capacitors (FeCAPs) with a higher remanent polarization (Pr) than epi-Ge. With the interface engineering by a high-k AlON, the reliability of the epi-GeSn-based FeCAPs is enhanced.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae00d183839bf1d5a328158dfd706327
https://doi.org/10.1021/acsami.1c05815
https://doi.org/10.1021/acsami.1c05815
Autor:
Yung-Hsien Wu, Pin-Jiun Wu, Hao-Kai Peng, Guan-Ting Lai, Chuan-Pu Chou, Yi-Fan Chen, Yu-Cheng Kao, Shih-Chieh Teng
Publikováno v:
IEEE Transactions on Nanotechnology. 20:761-764
Ultra-violet laser thermal annealing (LTA) is proposed to form contact TiSix for sub-10 nm FinFETs. Compared to conventional rapid thermal annealing (RTA), LTA process leads to reduced total series resistance (RTotal) by 10.1∼16.1% and 13.0∼15.3%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23fdaf44dae457ffd0545eef6ea6819f
https://doi.org/10.1109/tnano.2021.3118217
https://doi.org/10.1109/tnano.2021.3118217
Publikováno v:
IEEE Electron Device Letters. 41:272-275
With ALD-Co on n+ -Ge (ND of $2\times {10}^{{19}}\text {cm}^{\text {-3}}$ ) as the platform, annealing schemes including rapid thermal annealing (RTA) and laser thermal annealing (LTA) were employed to study its impact on the characteristics of CoGe2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3fbcebf725506fa13779473b8ce9670
https://doi.org/10.1109/led.2019.2961382
https://doi.org/10.1109/led.2019.2961382
Publikováno v:
IEEE Electron Device Letters. 41:139-142
Co silicide on $\text{n}^{+}$ -Si substrate ( $\text{N}_{\text {D}}= {8}\times {10}^{{{19}}}$ cm $^{{-{3}}}$ ) formed by atomic layer deposition (ALD) Co deposition and subsequent rapid thermal annealing (RTA) was proposed as the contact silicide for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e97476d2f26c603774cc170db0fa596
https://doi.org/10.1109/led.2019.2952921
https://doi.org/10.1109/led.2019.2952921
Publikováno v:
Journal of Materials Chemistry C. 7:5201-5208
2-Stage defect engineering of poly-GeSn (Sn: ∼5.1%) film for bottom-gate junctionless P-channel thin film transistors (JL P-TFTs), including gas annealing and plasma treatment, is investigated in this work. Stage I of the Ar gas annealing is effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aa9a673dd937998879bb63d1c75779b
https://doi.org/10.1039/c8tc04972f
https://doi.org/10.1039/c8tc04972f
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:P647-P651
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8ab00f7bed0748dc7ce521afbce6a41
https://doi.org/10.1149/2.0181910jss
https://doi.org/10.1149/2.0181910jss
Publikováno v:
ACS applied materialsinterfaces. 12(1)
Ferroelectric HfZrOx (Fe-HZO) with a larger remnant polarization (Pr) is achieved by using a poly-GeSn film as a channel material as compared with a poly-Ge film because of the lower thermal expansion that induces higher stress. Then two-stage interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4da88c24aed0a2dd00c79631784fea3a
https://pubmed.ncbi.nlm.nih.gov/31814384
https://pubmed.ncbi.nlm.nih.gov/31814384
Publikováno v:
IEEE Electron Device Letters. 39:1187-1190
A systematic investigation on the formation of poly-GeSn film by depositing amorphous GeSn film and subsequent annealing was carried out in this letter to implement high-performance p-channel junctionless thin-film transistors. By using planar device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12635dcedd9bfd21a069425cd74600ea
https://doi.org/10.1109/led.2018.2846882
https://doi.org/10.1109/led.2018.2846882
Publikováno v:
IEEE Electron Device Letters. 39:91-94
The process to form Ti germanide on P-implanted Ge ( $ {2} \times {10}^{ {19}}$ cm−3) with low contact resistivity ( $\rho _{c}$ ) was developed. Sequential deposition of Ti and TiN on n-Ge without annealing leads to rectifying ${I}$ – ${V}$ char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c827e5d088d580c5a96a3010116e0e5
https://doi.org/10.1109/led.2017.2774502
https://doi.org/10.1109/led.2017.2774502
Autor:
Yi-Wen Lin, Meng-Ju Tsai, Yung-Chun Wu, Guang-Li Luo, Yu-Chen Tsai, Siao-Cheng Yan, Fu-Ju Hou, Chong-Jhe Sun, Chuan-Pu Chou
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:065002
This study reports the ferroelectric (FE) layer of Hf0.5Zr0.5O2 (HZO) film on a Ge gate-all-around field-effect-transistor (GAAFET) with inversion mode (IM) and junctionless (JL) mode, and is the first that discuss the association of the JL field-eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07c0421484b96d21083eeb85e9b7bc90
https://doi.org/10.1149/2162-8777/ac04f8
https://doi.org/10.1149/2162-8777/ac04f8